利用時間積分與時間解析光光譜量測，來探討砷化銦/砷化鎵多層堆疊量子點中載子的行為。由分子束磊晶法成長30週期多層堆疊量子點，其間隔層厚度分別為10、15、20和30 nm。隨著間隔層的增加，時間積分螢光光譜顯示有紅移現象。此現象來自於多層堆疊量子點的應力釋放，導致光譜峰值往低能量移動。以時間解析螢光光譜來看，螢光衰減時間會跟著間隔厚度增加而變短。這是由於量子點垂直耦合效應減少，造成螢光生命期較快結束。激發能量若以高能量3.09 eV（404 nm）激發時，載子捕捉和螢光生命期的時間都會比低能量1.54 eV（808 nm）激發要來的久。以高能量激發其上升時間（rise time）較長是由於電子從能帶中L帶到Γ帶所花費的時間。而螢光生命期較久，則是光對材料穿透深度不同與載子的穿隧現象所造成。 此外，載子躍遷到量子點的速率會跟著激發強度增大而變快，此特性是Auger效應。

Carrier dynamics of mullti-stacked quantum dots (MSQDs) have been studied by means of time-integrated and time-resolved photoluminescence (PL). The MSQD with different spacer thickness of 10, 15, 20 and 30 nm were grown by molecular beam epitaxy. Time-integrated PL exhibit red shift as spacer thickness increases. The red shift originated from the vertical coupling relaxes the strain in the MSQDs, leading to a decrease in the PL peak energy. From time-resolved PL, the MSQD with spacer thickness increased reveals the shorter lifetime of PL peak among samples studies. We attribute the maximum of lifetime to a better vertical alignment. We report on a measurement of the rise and decay of luminescence intensity in the MSQDs excited at 1.54 eV (808 nm) and 3.09 eV (404 nm). The results show a slow rise time of electrons from the L to the Γ valley for high photoexcitation energies. The decay in luminescence is longest with photoexcitation at 3.09 eV, we demonstrate the importance of the penetration depth and carriers tunneling. In addition, the MSQDs strongly depends of on the carrier injection. The rise times decrease with increasing excitation density. The properties are characteristic features of Auger processes.

中文摘要…………………………………………………………………I
Abstract……………………………………………………………….II
目錄………………………………………………….……………….III
圖目錄…………………………………………………………………..V
表目錄………………………………………………………………….XI
第一章 導論……………………………………………………………01
1-1 量子點的發展簡史……………………………………01
1-2 文獻回顧與動機………………………………………05
1-3 論文架構………………………………………………08
第二章 垂直耦合量子點介紹與樣品結構……………………………09
2-1 單層自組成量子點……………………………………09
2-2 垂直耦合自組成量子點………………………………12
2-3 多層量子點結構介紹…………………………………15
第三章 實驗原理與架設……………………………………………19
3-1 非線性光學原理………………………………………19
3-2 Upconversion原理……………………………………23
3-3 實驗架設說明…………………………………………29
第四章 光譜基本原理與載子機制…………………………………34
4-1 載子動力學……………………………………………34
4-2 載子捕獲(Carrier Capture) 機制…………………37
4-3 載子釋放能量(energy relaxation)機制…………38
4-4 載子結合(carrier recombination)機制…………40
第五章 實驗結果與討論……………………………………………43
5-1 光激發螢光光譜量測（PL）分析……………………43
5-2 時間解析螢光光譜（TRPL）分析……………………50
5-3 不同激發波長的時間解析光譜分析分析……………59
5-4 不同激發強度的時間解析光譜分析分析……………73
第六章 結論……………………………………………………………79
參考文獻………………………………………………………………81
附錄……………………………………………………………………85

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