本文修正了傳統的矽鍺異質接面雙載子電晶體的小訊號等效電路模型，於內質基極-集極(BC)接面加入了崩潰網路來模型化元件操作在崩潰區情況下的輸出特性，並準確的擬合到量測的散射參數。當基極-集極接面游離衝撞效應明顯時，產生的崩潰電洞流以及崩潰電子流會使得S11產生振盪特性以及S22產生電感性現象。本文藉由直流(DC)與射頻(RF)的量測來探討其崩潰機制以及如何影響到輸入端與輸出端的阻抗特性，使得修正後的小訊號模型能夠擬合到一般工作區以及崩潰區的散射參數。

This thesis proposes a modified small signal model for silicon germanium heterojunction bipolar transistor (SiGe HBT). The breakdown network in the intrinsic base-collector (BC) junction is used to model the output characteristics in the breakdown region, and it shows good agreement between the measured and simulated S-parameters. When the impact ionization in the BC junction becomes significant, the generated breakdown hole current and breakdown electron current will result in the oscillation in S11 and inductive S22, respectively. We investigate the breakdown mechanism and the affect on the input and output impedance from the direct current (DC) and radio frequency (RF) measurements, and the modified small signal model can accurately fit the measured S-parameters both in the active and breakdown regions.

目錄
頁次
目錄----------------------------------------------------------------------------------------I
圖目錄-----------------------------------------------------------------------------------III
表目錄-----------------------------------------------------------------------------------V
第一章 緒論-----------------------------------------------------------------------------1
1.1 研究背景與動機--------------------------------------------------------------1
1.2 章節規劃-----------------------------------------------------------------------1
第二章 垂直結構矽鍺異質接面雙載子電晶體的基本操作特性--------------3
2.1 異質接面雙載子電晶體直流操作特性-----------------------------------3
2.2 異質接面雙載子電晶體崩潰電壓特性-----------------------------------5
2.3 異質接面雙載子電晶體直流崩潰特性-----------------------------------6
2.4 異質接面雙載子電晶體的直流倍增因子M-1--------------------------9
2.4.1固定VBE量測直流倍增因子---------------------------------------9
2.4.2固定IE量測直流倍增因子---------------------------------------10
第三章 射頻操作下的崩潰特性--------------------------------------12
3.1 S11的振盪特性--------------------------------------------12
3.2 S22的電感現象-----------------------------------------15
3.3 傳統異質接面雙載子電晶體小訊號模型------------------------------17
第四章 異質接面雙載子電晶體崩潰模型建立----------------------------------20
4.1修正的異質接面雙載子電晶體小訊號模型----------------------------20
4.2小訊號模型參數萃取------------------------------------------------------22
4.3內質模型S11與S22推導------------------------------------------------25
4.4崩潰網路萃取與小訊號擬合結果----------------------------------------27
4.5不同摻雜濃度元件的崩潰效應探討-------------------------------------33
第五章 結論與未來展望-------------------------------------------------------------36
參考文獻--------------------------------------------------------------------------------37

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