Responsive image
博碩士論文 etd-0811113-175326 詳細資訊
Title page for etd-0811113-175326
論文名稱
Title
兆赫波時間解析系統之非極化氮化鎵光學特性研究
Study of optical Properties of nonpolar GaN using terahertz time domain spectroscopy
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
114
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2013-07-30
繳交日期
Date of Submission
2013-09-12
關鍵字
Keywords
載子濃度、載子遷移率、德汝德模型、導電率、折射率、兆赫波、氮化鎵
conductvity, Drude model, mobility, carrier density, refractive, Terahertz, GaN
統計
Statistics
本論文已被瀏覽 5732 次,被下載 0
The thesis/dissertation has been browsed 5732 times, has been downloaded 0 times.
中文摘要
本論文探討以光電導偶極天線(PC antenna)產生兆赫波輻射,並以兆赫波時間解析光譜(Terahertz Time-Domain Spectroscopy)研究m面氮化鎵(GaN)樣品。因樣品表面具有極性,將樣品旋轉角度藉由兆赫波輻射與樣品c軸夾角觀察波型與強度的關係,同時探討同一氮化鎵樣品中,兆赫波對於不同位置吸收的強度比較,並計算樣品的物理參數(折射率、導電率等等)與探討影響波形的因素。樣品間具有不同氮鎵比以及不同通氮電漿濃度的差異。根據基板與樣品的兆赫波訊號,我們計算材料的複數折射率(complex refractive index)、複數導電率(complex conductivity),利用德汝德模型(Drude model)對實驗數據進行擬合(fitting)獲得載子濃度(carrier density)與載子遷移率(mobility)。最後與過去的文獻做比較,其折射率與擬合後所獲得的導電率值,接近於過去文獻。
關鍵詞:兆赫波, 氮化鎵, 折射率, 導電率, 德汝德模型, 載子濃度, 載子遷移率
Abstract
Key word:Terahertz, GaN, refractive, conductvity, Drude model, carrier density, mobility
We use the PC-antenna to generate the THz and study the optical properties of nonpolar GaN using Terahertz Time Domain system. In this thesis, because of the nonpolar GaN, we investigate the THz intensity data and wave shape when changing the angel between terahertz polarization and c-axis. At the same sample, we use the THz to pass the different position and research the THz intensity data and wave shape, and then we calculate the refractive index and conductivity. We investigate the factors which affect the wave shapes. The differences between samples are N/Ga ratio and N power. Using the signal of substrate and sample, we calculate the complex refractive index and conductivity. We use Drude model to obtain the parameters of carrier density and mobility by fitting experiment data. Finally, the results are compared with the previous papers. The refractive index and conductivity are near the values in previous papers.
目次 Table of Contents
目錄
論文審定書 i
致謝 ii
Abstract iv
第一章 導論 1
1-1前言 1
1-2兆赫波發展史 2
1-3簡述兆赫波產生方式 3
1-4文獻探討-利用兆赫波對樣品之相關研究 5
第二章 實驗原理 11
2-1光電導偶極天線產生及偵測兆赫波原理 11
2-2光電導偶極天線產生及偵測兆赫波原理推導 12
2-3在ZnTe及Balance detector方面 15
2-4實驗數據分析原理: 17
第三章 實驗架設 24
3-1實驗光路架設 24
3-2 Mai Tai Laser & PC Antenna 26
3-2鎖相放大器(Lock-in, SR850) 27
3-3 Balance Detector 28
第四章 樣品介紹與實驗結果 29
4-1樣品介紹(M-plane多層膜GaN) 29
4-2實驗結果分析 32
第五章 結論 95
參考文獻 97
參考文獻 References
1 M. Tonouchi, Nat. Photonics 1, 97 (2007).
2 B. B. Hu, X. C. Zhang, D. H. Auston, and P. R. Smith, Appl. Phys. Lett.
56, 506 (1990).
3 A. Rice, Y. Jin, X.-F. Ma, X.-C. Zhang, D. Bliss, J. Perkin, and M. Alexander,
Appl. Phys. Lett. 64, 1324 (1994).
4 S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
5 S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
6 S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita,
Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 1417 (1997).
7 J. Wu, W. Walukiewicz, K. M. Yu, W. Shan, J. W. Ager III, E. E. Haller,
H. Lu, W. J. Schaff, W. K. Metzger, and S. Kurtz, J. Appl. Phys. 94, 6477
(2003).
8 R. Gaska, J. W. Yang, A. Osinsky, Q. Chen, M. A. Khan, A. O. Orlov,
G.L. Snider, and M. S. Shur, Appl. Phys. Lett. 72, 707 (1998).
9 X.-C. Zhang, Introduction to THz Wave Photonics (Springer, New York, 2010).
10 黃正雄, 林光儀, 成大研發快訊1, 7 (2007).
11 D. H. Auston, K. P. Cheung, and P. R. Smith, Appl. Phys. Lett. 45, 284 (1984).
12 J. T. Darrow, X.-C. Zhang, D. H. Auston, and J. D. Morse, IEEE J. Quantum
Electron. 28, 1607 (1992).
13 Q. Wu and X. C. Zhang, Appl. Phys. Lett. 67, 2523, (1995).
14 K. Liu, A. Krotkus, K. Bertulis, J. Xu, and X.-C. Zhang, J. Appl. Phys,
94, 3651 (2003).
15 M. A. Mohamed, P. T. Lam, and N. Otsuka, J. Appl. Phys. 113, 053504
(2013).
16 S. Rihani, R. Faulks, H. E. Beere, I. Farrer, M. Evans, D. A. Ritchie, and
M. Pepper, Appl. Phys. Lett. 96, 091101 (2010).
17 M. Currie, F. Quaranta, A. Cola, E. M. Gallo, and B. Nabet, Appl. Phys. Lett.
99, 203502 (2011).
18 J. N. Heyman, N. Coates, A. Reinhardt, Appl. Phys. Lett. 83,5476 (2003).
19 L. Duvillaret, F. Garet, and J. L. Coutaz, IEEE J. Sel. Top. Quantum Electron.
2, 739 (1996).
20 W. Zhang, A. K. Azad, and D. Grischkowsky, Appl. Phys. Lett. 82, 2841
(2003).
21 T. Nagashima, K. Takata, S. Nashima, H. Harima and M. Hangyo,
Jpn. J. Appl. Phys. 44, 926 (2005).
22 T.-R. Tsai, S.-J. Chen, C.-F. Chang, S.-H. Hsu, T.-Y. Lin, Opt. Exp. 14, 4898
(2006).
23 Z. Zhou, A.-T. Chen, L.-S. Feng, X.-J. Xin, and C.-X. Yu, Microwave And
Opt. Technology Lett., 51, 1617 (2009).
24 H. C. Guo, X. H. Zhang, W. Liu, A. M. Yong, and S. H. Tang, J. Appl. Phys.
106, 063104 (2009).
25 H.-N. Fang(方賀男), R. Zhang(張榮), B. Liu(劉斌), H. Lu(陸海), J.-P.
Ding(丁劍平), Z.-L. Xie(謝自力)1, X.-Q. Xiu(修向前), Y.-D. Zheng(鄭有
炓), M.-W. Xiao(肖明文), C.-H. Zhang(張彩虹), J. Chen(陳健), P.-H.
Wu(吳培亨), CHIN. PHYS. LETT., 27, 017802 (2010).
26 A. Gauthier-Brun, J. H. Teng, E. Dogheche, W. Liu, A. Gokarna, Appl. Phys.
Lett. 100, 071913 (2012).
27 K. J. Willis, S. C. Hagness, and I. Knezevic, Appl. Phys. Lett. 102, 122113
(2013).
28 曾彥智, “M-Plane GaN 時間解析螢光光譜特性之研究”, 國立高雄師範
大學物理系研究所碩士論文.
29 龐文淵, “以分子束磊晶在鋁酸鋰基板上成長之氮化鎵的特性”, 國立中山
大學物理學系研究所碩士論文.
30 吳昊霏, “以分子束磊晶在鋁酸鋰基板上成長氮化鎵的表面與結構特性研
究”,國立中山大學物理學系研究所碩士論文.
31 Y. Lee, Principles of Terahertz Science and Technology (Springer, New York,
2009).
32 X. Zou, M. He, D. Springer, D. Lee, S. K. Nair, AIP Advances 2,
012120 (2012).
33 W. J. Moore and J. A. Freitas, Jr., Phys. Rev. B 56, 12073 (1997).
34 A. S. Barker, Jr. and M. Ilegems, Phys. Rev. B 7, 743 (1973).
35 X. H. Zhang, H. C. Guo, A. M. Yong, J. D. Ye, S. T. Tan, and X. W. Sun,
J. Appl. Phys. 107, 033101(2010).
36 P.Waltereit, O.Brandt, A.Trampert, H.T.Grahn, J.Menniger, M.Ramsteiner,
M.Reiche , K.H.Ploog, Nature 406, 865 (2000).
37 J.K. Tsai, I. Lo, K.L. Chuang, L.W. Tu, J.H. Huang, J. Appl. Phys. 95, 460
(2004).
38 X. Xin, H. Altan, A. Saint, D. Matten, and R. R. Alfano, J. Appl. Phys. 100,
094905 (2006).
39 Martin van Exter, Ch. Fattinger, and D. Grischkowsky, Opt. Exp. 14, 1128
(1989).
40 M. McLaurin, T. E. Mates, F. Wu, and J. S. Speck, J. Appl. Phys. 100, 063707
(2006).
41 C.-H. Hsieh, I-K. Lo, M.-H. Gau, Y.-L. Chen, M.-C. Chou, W.-Y. Pang,
Y.-I Chang, Y.-C. Hsu, M.-W. Sham, J.-C. Chiang, and J.-K. Tsai, Jpn. J. Appl.
Phys. 47,891 (2008).
42 J. Lin, Z. Wen, X. Xu, N. Li, S. Song, Fusion Eng. Des. 85, 1162 (2010).
43 C. H. Hsu, K. P. Ip, J. W. Johnson, S. N. G. Chu, O. Kryliouk, S. J. Pearton,
L. Li, B. H. T. Chai, T. J. Anderson, F. Ren, Electrochem. Solid-State Lett. 4,
C35 (2001).
44 J. Zou, Y. Dong, S. Zhou, Y. Sun, W. Jun, J. Zhou, T. Huang, S. Yang,
H. Zhou, J. Cryst. Growth 294, 339 (2006).
45 C. Liu, Z. Xie, P. Han, B. Liu, L. Li, J. Zou, S. Zhou, L.-H. Bai, Z.-H. Chen,
R. Zhang, Y. Zheng, J. Cryst. Growth 298, 228 (2007).
電子全文 Fulltext
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。
論文使用權限 Thesis access permission:自定論文開放時間 user define
開放時間 Available:
校內 Campus:永不公開 not available
校外 Off-campus:永不公開 not available

您的 IP(校外) 位址是 3.145.60.166
論文開放下載的時間是 校外不公開

Your IP address is 3.145.60.166
This thesis will be available to you on Indicate off-campus access is not available.

紙本論文 Printed copies
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。
開放時間 available 永不公開 not available

QR Code