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論文名稱 Title |
X參數模型應用於功率放大器設計 X-Parameter Model For Power Amplifier Design |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
62 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2017-06-20 |
繳交日期 Date of Submission |
2017-09-11 |
關鍵字 Keywords |
砷化鎵、A類、X參數模型、功率放大器、假晶式高速電子遷移率電晶體 GaAs, Class A, X-parameter model, pHEMT, Power amplifier |
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統計 Statistics |
本論文已被瀏覽 5676 次,被下載 44 次 The thesis/dissertation has been browsed 5676 times, has been downloaded 44 times. |
中文摘要 |
本研究透過不同負載阻抗的X參數模型用來預測GaAs pHEMT的等功率圓,用以獲得最大輸出功率。這新方法是萃取不同負載阻抗X參數去預測獲得史密斯圖中的等功率圓,這會比傳統負載拉移方式更為方便快速。由預測所獲得之最佳輸出功率特性會與實際負載拉移獲得的功率結果一致。可靠且一致的結果有助於RF領域的功率放大器設計。 |
Abstract |
The prediction of maximum output power for GaAs pHEMT is implemented by power contour determined from X-parameter model at different impedance. This novel method to extract load independent X-parameters for power contour prediction on Smith Chart is more convenient than the conventional load-pull method. The optimum output power characteristics are in good agreement between the prediction and the load-pull experimental results. This investigation of the reliable approach is good for RF power amplifier designing. |
目次 Table of Contents |
目錄 頁次 論文審定書----------------------------------------------------------------------------------------i 誌謝-------------------------------------------------------------------------------------------------ii 中文摘要-------------------------------------------------------------------------------------------iii Abstract--------------------------------------------------------------------------------------------iv 目錄-------------------------------------------------------------------------------------------------v 圖次-------------------------------------------------------------------------------------------------vii 表次--------------------------------------------------------------------------------------------------x 第一章 緒論----------------------------------------------------------------------------------------1 1.1 研究背景與簡介-----------------------------------------------------------------------1 1.2 章節內容提要--------------------------------------------------------------------------3 第二章 功率放大器的分類與性能參數-------------------------------------------------------4 2.1 功率放大器的分類--------------------------------------------------------------------4 2.1.1電流源功率放大器-----------------------------------------------------------------4 2.1.2 定幅功率放大器-------------------------------------------------------------------9 2.2 功率放大器的性能參數-------------------------------------------------------------10 第三章 X參數模型應用於功率放大器設計------------------------------------------------17 3.1 功率放大器設計方式----------------------------------------------------------------17 3.1.1 直流分析--------------------------------------------------------------------------17 3.1.2 穩定度分析-----------------------------------------------------------------------19 3.1.3 負載拉移分析--------------------------------------------------------------------24 3.2 X參數基本介紹---------------------------------------------------------------------28 3.3 X參數預測功率與最佳阻抗點---------------------------------------------------28 3.4 功率放大器設計架構----------------------------------------------------------------31 3.5 功率放大器設計流程----------------------------------------------------------------31 第四章 X參數功率放大器量測與結果------------------------------------------------------34 4.1 簡介-------------------------------------------------------------------------------------34 4.2 量測儀器與方式-----------------------------------------------------------------------34 4.3 功率放大器實驗結果----------------------------------------------------------------36 4.4 X參數模型套入電路模擬-----------------------------------------------------------45 第五章 結論與未來展望-----------------------------------------------------------------------49 |
參考文獻 References |
[1] A. Rasmi, M. R. C. Rose, A. I. A. Rahim, and A. Marzuki, "2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications," in Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of, 2010, pp. 1-4. [2] A. Rasmi, A. Marzuki, M. R. C. Rose, I. M. Azmi, and A. I. A. Rahim, "A 2.4 GHz packaged power amplifier using GaAs PHEMT technology," in 2011 IEEE Regional Symposium on Micro and Nano Electronics, 2011, pp. 148-151. [3] A. Bessemoulin, S. Mahon, A. Dadello, G. McCulloch, and J. Harvey, "Compact and broadband microstrip power amplifier MMIC with 400-mW output power using 0.15um GaAs PHEMTs," in European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, 2005, pp. 41-44. [4] C. Baylis, R. J. Marks, J. Martin, H. Miller, and M. Moldovan, "Going Nonlinear," IEEE Microwave Magazine, vol. 12, pp. 55-64, 2011. [5] G. Simpson, J. Horn, D. Gunyan, and D. E. Root, "Load-pull + NVNA = enhanced X-parameters for PA designs with high mismatch and technology-independent large-signal device models," in 2008 72nd ARFTG Microwave Measurement Symposium, 2008, pp. 88-91. [6] A. M. Pelaez-Perez, S. Woodington, M. Fernandez-Barciela, P. J. Tasker, and J. I. Alonso, "Application of an NVNA-Based System and Load-Independent X-Parameters in Analytical Circuit Design Assisted by an Experimental Search Algorithm," IEEE Transactions on Microwave Theory and Techniques, vol. 61, pp. 581-586, 2013. [7] A. M. Pelaez-Perez, J. I. Alonso, M. Fernandez-Barciela, and P. J. Tasker, "Validation of load-independent X-parameters; formulation for use in analytical circuit design," in Active RF Devices, Circuits and Systems Seminar, 2011, pp. 47-50. [8] H. G. Joujili, M. Mivehchy, and M. Habibi, "A Novel Analytical Design Approach for Determining the Optimum Load to Minimize Harmonic Output Power Based on X-Parameters," IEEE Transactions on Microwave Theory and Techniques, vol. 64, pp. 3492-3500, 2016. [9] G. Casini, A. Cidronali, and G. Manes, "Investigation of X-parameters modeling for accurate envelope tracking power amplifier system simulations," in 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013, pp. 1-4. [10] P. Zawada, P. Barmuta, T. S. Nielsen, D. Schreurs, and A. Lewandowski, "Systematic procedure for load-pull X-parameters measurements for high-efficiency GaN HEMT PA design," in 2014 20th International Conference on Microwaves, Radar and Wireless Communications (MIKON), 2014, pp. 1-4. [11] Y. Wang, T. S. Nielsen, O. K. Jensen, and T. Larsen, "X-parameter based GaN device modeling and its application to a high-efficiency PA design," in 2014 International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014, pp. 1-4. |
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