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博碩士論文 etd-0811117-134325 詳細資訊
Title page for etd-0811117-134325
論文名稱
Title
假晶式高速電子遷移率電晶體功率放大器之大訊號可靠度
Large-signal reliability of pHEMT power amplifier
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
55
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2017-06-20
繳交日期
Date of Submission
2017-09-11
關鍵字
Keywords
X參數、應力量測、射頻、假晶式高速電子遷移率電晶體、功率放大器
X-parameter, stress, power amplifier, pHEMT, RF
統計
Statistics
本論文已被瀏覽 5698 次,被下載 26
The thesis/dissertation has been browsed 5698 times, has been downloaded 26 times.
中文摘要
透過PNA-X量測萃取功率放大器和pHEMT的X參數,並使用該X參數模型進行模擬,和驗證模型的實用性。
觀察pHEMT和功率放大器在大訊號應力量測下的波形與電流變化。
藉由X參數模型去設計功率放大器,再比較實際下線電路與X參數模擬電路特性結果,特性上會一致,證明X參數的應用性。另外也針對砷化鎵與氮化鎵元件做應力量測,觀察元件是否隨著施加應力而變化。
Abstract
Power amplifier and pHEMT are measured to extract the X-parameters from PNA-X. The X-parameters model is used to simulate and the practical of the model could be validated. Under large signal stress measurement in pHEMT and power amplifier, observe the variation of waveform and current.
The thesis propose to design the power amplifier by X parameter model, and then compare the circuit with simulation characteristic. The characteristics will be consistent, proving the applicability of the X parameter. The research observe the variation of component along with stress measurement on GaAs and GaN.
目次 Table of Contents
第一章 緒論 1
1.1 引言 1
1.2研究動機 1
1.3 X參數簡介 1
1.4 論文架構 2
第二章 微波參數與量測環境 3
2.1 簡介 3
2.2 微波參數 3
2.2.1 散射參數 3
2.2.2放大器特性定義 4
2.3量測平台 7
2.3.1半導體參數分析儀 7
2.3.2 PNA網路分析儀(E8364B) 7
2.3.3頻譜分析儀(R&S FSP Spectrum Analyzer) 8
2.3.4 PNA-X 微波網路分析儀(N524XA系列) 9
2.4 假晶式高速電子遷移率電晶體 11
第三章X參數模型 13
3.1 散射函數 13
3.2 諧波疊加 14
3.3 多諧波失真模型 17
第四章 單級功率放大器設計 18
4.1單級功率放大器之傳統設計 18
4.2本論文設計之功率放大器 19
4.2.1電路設計原理 19
4.2.2 下線電路量測 21
4.3 X參數模型 24
第五章 可靠度量測 26
5.1應力量測 26
5.2 變溫應力量測 30
5.3氮化鎵變溫應力量測 36
5.4 應力量測結果 41
第六章 結論 43
參考文獻 44
參考文獻 References
[1] D. M. Pozar, Microwave engineering. John Wiley & Sons, 2009.
[2] 邱佳松, 林書毓, and 黃國威, "非線性向量網路分析量測系統簡介," 國家奈米元件實驗室奈米通訊, vol. 16.4, pp. 35-39, 2009.
[3] 蕭旭峰, "X 參數功率量測系統介紹," CIC ENEWS, vol. 168, pp. 1-11.
[4] C. Baylis, R. J. Marks, J. Martin, H. Miller, and M. Moldovan, "Going nonlinear," IEEE Microwave Magazine, vol. 12, no. 2, pp. 55-64, 2011.
[5] 黃建棟, "砷化鎵(GaAs)製程介紹," CIC ENEWS, vol. 69, pp. 4-9.
[6] Verspecht and D. E. Root, "Polyharmonic distortion modeling," IEEE Microwave Magazine, vol. 7, no. 3, pp. 44-57, 2006.
[7] J. Verspecht, "Scattering functions for nonlinear behavioral modeling in the frequency domain," in IEEE MTT-S Int. Microwave Symp. Workshop, 2003.
[8] D. E. Root, J. Horn, and T. Nielsen, "X-parameters: The emerging paradigm for
interoperable characterization, modeling, and design of nonlinear microwave and RF components and systems," Proc. IEEE Wamicon Tutorial, pp. 1-62,
2010.
[9] J. Verspecht and P. Van Esch, "Accurately characterizing hard nonlinear behavior of microwave components with the nonlinear network measurement
system: Introducing ‘nonlinear scattering functions’," in Proceedings of the 5th
International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 1998, pp. 17-26.
[10] M. Borgarino, R. Menozzi, Y. Baeyens, P. Cova, and F. Fantini, "Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs
PHEMT's," IEEE Transactions on Electron Devices, vol. 45, no. 2, pp. 366-372, 1998.
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