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論文名稱 Title |
假晶式高速電子遷移率電晶體功率放大器之大訊號可靠度 Large-signal reliability of pHEMT power amplifier |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
55 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2017-06-20 |
繳交日期 Date of Submission |
2017-09-11 |
關鍵字 Keywords |
X參數、應力量測、射頻、假晶式高速電子遷移率電晶體、功率放大器 X-parameter, stress, power amplifier, pHEMT, RF |
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統計 Statistics |
本論文已被瀏覽 5698 次,被下載 26 次 The thesis/dissertation has been browsed 5698 times, has been downloaded 26 times. |
中文摘要 |
透過PNA-X量測萃取功率放大器和pHEMT的X參數,並使用該X參數模型進行模擬,和驗證模型的實用性。 觀察pHEMT和功率放大器在大訊號應力量測下的波形與電流變化。 藉由X參數模型去設計功率放大器,再比較實際下線電路與X參數模擬電路特性結果,特性上會一致,證明X參數的應用性。另外也針對砷化鎵與氮化鎵元件做應力量測,觀察元件是否隨著施加應力而變化。 |
Abstract |
Power amplifier and pHEMT are measured to extract the X-parameters from PNA-X. The X-parameters model is used to simulate and the practical of the model could be validated. Under large signal stress measurement in pHEMT and power amplifier, observe the variation of waveform and current. The thesis propose to design the power amplifier by X parameter model, and then compare the circuit with simulation characteristic. The characteristics will be consistent, proving the applicability of the X parameter. The research observe the variation of component along with stress measurement on GaAs and GaN. |
目次 Table of Contents |
第一章 緒論 1 1.1 引言 1 1.2研究動機 1 1.3 X參數簡介 1 1.4 論文架構 2 第二章 微波參數與量測環境 3 2.1 簡介 3 2.2 微波參數 3 2.2.1 散射參數 3 2.2.2放大器特性定義 4 2.3量測平台 7 2.3.1半導體參數分析儀 7 2.3.2 PNA網路分析儀(E8364B) 7 2.3.3頻譜分析儀(R&S FSP Spectrum Analyzer) 8 2.3.4 PNA-X 微波網路分析儀(N524XA系列) 9 2.4 假晶式高速電子遷移率電晶體 11 第三章X參數模型 13 3.1 散射函數 13 3.2 諧波疊加 14 3.3 多諧波失真模型 17 第四章 單級功率放大器設計 18 4.1單級功率放大器之傳統設計 18 4.2本論文設計之功率放大器 19 4.2.1電路設計原理 19 4.2.2 下線電路量測 21 4.3 X參數模型 24 第五章 可靠度量測 26 5.1應力量測 26 5.2 變溫應力量測 30 5.3氮化鎵變溫應力量測 36 5.4 應力量測結果 41 第六章 結論 43 參考文獻 44 |
參考文獻 References |
[1] D. M. Pozar, Microwave engineering. John Wiley & Sons, 2009. [2] 邱佳松, 林書毓, and 黃國威, "非線性向量網路分析量測系統簡介," 國家奈米元件實驗室奈米通訊, vol. 16.4, pp. 35-39, 2009. [3] 蕭旭峰, "X 參數功率量測系統介紹," CIC ENEWS, vol. 168, pp. 1-11. [4] C. Baylis, R. J. Marks, J. Martin, H. Miller, and M. Moldovan, "Going nonlinear," IEEE Microwave Magazine, vol. 12, no. 2, pp. 55-64, 2011. [5] 黃建棟, "砷化鎵(GaAs)製程介紹," CIC ENEWS, vol. 69, pp. 4-9. [6] Verspecht and D. E. Root, "Polyharmonic distortion modeling," IEEE Microwave Magazine, vol. 7, no. 3, pp. 44-57, 2006. [7] J. Verspecht, "Scattering functions for nonlinear behavioral modeling in the frequency domain," in IEEE MTT-S Int. Microwave Symp. Workshop, 2003. [8] D. E. Root, J. Horn, and T. Nielsen, "X-parameters: The emerging paradigm for interoperable characterization, modeling, and design of nonlinear microwave and RF components and systems," Proc. IEEE Wamicon Tutorial, pp. 1-62, 2010. [9] J. Verspecht and P. Van Esch, "Accurately characterizing hard nonlinear behavior of microwave components with the nonlinear network measurement system: Introducing ‘nonlinear scattering functions’," in Proceedings of the 5th International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 1998, pp. 17-26. [10] M. Borgarino, R. Menozzi, Y. Baeyens, P. Cova, and F. Fantini, "Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's," IEEE Transactions on Electron Devices, vol. 45, no. 2, pp. 366-372, 1998. |
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