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論文名稱 Title |
以水參與液相沉積法生長氟化氧化矽於非晶矽之研究 Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
112 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2008-07-18 |
繳交日期 Date of Submission |
2008-08-12 |
關鍵字 Keywords |
非晶矽、氟氧化矽、氧化矽、液相沉積法、溫差法 Amorphous silicon, Fluorinated Silicon Oxide, Silicon oxide, LPD |
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統計 Statistics |
本論文已被瀏覽 5678 次,被下載 1380 次 The thesis/dissertation has been browsed 5678 times, has been downloaded 1380 times. |
中文摘要 |
探討氟化氧化矽薄膜於單晶矽基板和非晶矽上的物理和化學特性,且利用金氧半結構來分析電特性。另一方面利用不同氧體的熱退火來改善薄膜特性。 |
Abstract |
In this study, SiO2-xFx films were deposited on Si and amorphous silicon, their physical and chemical properties were measured. An Al/ SiO2-xFx /Si and Al/ SiO2-xFx/a-Si/Si MOS structures were used for the electrical measurements. To improve the electrical properties, we investigated the characteristics of SiO2-xFx films after annealing in nitrogen and oxygen ambient. We can find the leakage current density can be reduced to about 1.09× 10-6 A/cm2 and 1.03× 10-7 at -1 MV/cm and at 1 MV/cm after annealing in oxygen ambient. Although the leakage current is improved one order but the dielectric constant is increase. |
目次 Table of Contents |
CHAPTER 1 1 INTRODUCTION 1 1-1 Background 1 1-2 Liquid Crystal Drive Schemes 1 1-2.1 Passive Matrix 2 1-2.2 Active Matrix 2 1-3 Development of TFTLCD 3 1-4 Motivation of Low k Materials as Gate Oxide and Inter-metal Dielectrics 3 1-5 Mechanisms of LPD- SiO2-xFx 4 1-6 Growth Methods 5 1-7 Advantages of Liquid Phase Deposition 6 References 9 CHAPTER 2 12 EXPERIMENTS 12 2-1 Deposition System 12 2-2 Cleaning of Substrate 13 2-3 Preparation of Deposition Solution 14 2-4 Film Deposition 15 2-5 Improvements of Electrical Properties 15 2-5.1 Annealing LPD-SiO2-xFx films in N2 and O2 ambient 15 2-5.2 Motivation of the Film LPD-SiO2-xFx with PMA treatment 16 2-5.2.1 Aluminum metal cleaning processes 16 2-5.2.2 PMA procedure 16 2-6 Characteristics 16 2-6.1 Physical and Chemical Properties 16 2-6.2 Electrical Properties 18 Chapter 3 ……………………………………………………………………………25 Results and Discussion 25 PART I: LPD-SiO2-xFx films on Si substrate 26 3-1 LPD-SiO2-xFx on Si as a Function of DI water Volume 26 3-1.1 Deposition Rate of LPD-SiO2-xFx Films Prepared with Different DI water Volume 26 3-1.2 FE-SEM Views of TD-LPD-SiO2 Films 27 3-1.3 AFM Analysis of LPD-SiO2-xFx Films 28 3-1.4 XPS Analysis of LPD-SiO2-xFx Films 28 3-1.4.1 XPS Analysis for the F Content 29 3-1.5 SIMS Depth Profile of LPD-SiO2-xFx Films 29 3-1.6 FTIR Spectra of LPD-SiO2-xFx Films 29 3-1.7 Model for Deposition Mechanism 30 3-1.8 Leakage Current Densities of LPD-SiO2-xFx Films as a Function of DI Water volume 31 3-1.9 Capacitance-Voltage Measurements of LPD-SiO2-xFx Films as a function of DI Water Volume 32 3-1.10 Dielectric Constant of LPD-SiO2-xFx Film 33 3-2 Improvement of Electrical Characteristics by N2 and O2 Post-annealing 34 3-2.1 XRD Patterns of LPD-SiO2-xFx Films 35 3-2.2 Electric Characteristics of LPD-SiO2-xFx Films Prepared at Different Annealing Temperature in N2 Ambient for 1 Hour 35 3-2.3 Electric Characteristics of LPD-SiO2-xFx Films Prepared at Different Annealing Temperature in O2 Ambient for 1 Hour 37 3-2.4 Electric Characteristics of LPD-SiO2-xFx Films Prepared by Post-metallization Annealing (PMA) 39 3-2.4.1 Motivation of LPD-SiO2-xFx Films with PMA Treatment 39 3-2.4.2 J-E & C-V Characteristics of PMA Temperature on Si 41 3-2.5 Tentative Summary 42 PART II: LPD-SiO2-xFx films on a-Si/p-type Si substrate 43 3-3 LPD-SiO2-xFx on a-Si/p-type Si substrate as a Function of DI water Volume 43 3-3.1 Deposition Rate of LPD-SiO2-xFx Films Prepared with Different DI water Volume 43 3-3.2 FE-SEM Views of LPD-SiO2-xFx Films on a-Si/p-type Si 44 3-3.3 AFM Analysis of LPD-SiO2-xFx Films on a-Si/p-type Si 45 3-3.4 XPS Analysis of LPD-SiO2-xFx Films on a-Si/p-type Si 45 3-3.4.1 XPS Analysis for the F Content 46 3-3.5 SIMS Depth Profile of LPD-SiO2-xFx Films on a-Si/p-type Si 46 3-3.6 FTIR Spectra of LPD-SiO2-xFx Films on a-Si/p-type Si 46 3-3.7 Leakage Current Densities of LPD-SiO2-xFx Films as a Function of DI Water volume on a-Si/p-type Si 47 3-3.8 Capacitance-Voltage Measurements of LPD-SiO2-xFx Films as a function of DI Water Volume on a-Si/p-type Si 48 3-4 Improvement of Electrical Characteristics by N2 and O2 Post-annealing 48 3-4.1 XRD Patterns of LPD-SiO2-xFx Films on a-Si/p-type Si 48 3-4.2 Electric Characteristics of LPD-SiO2-xFx Films Prepared at Different Annealing Temperature in N2 Ambient for 1 Hour on a-Si/p-type Si 49 3-4.3 Electric Characteristics of LPD-SiO2-xFx Films Prepared at Different Annealing Temperature in O2 Ambient for 1 Hour on a-Si/p-type Si 51 3-4.4 Electric Characteristics of LPD-SiO2-xFx Films Prepared by Post-metallization Annealing (PMA) 53 3-4.4.1 J-E & C-V Characteristics of PMA Temperature on a-Si 53 3-4.5 Tentative Summary 54 References 91 Chapter 4….. 96 Conclusions 96 |
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