透明導電薄膜（TCO）具有低電阻率、高光穿透率的特性，現今被廣泛應用在各類顯示器面板上，作為透明電極。目前最常見的透明電極材料為氧化銦錫（ITO），
銦屬於稀有元素並有毒性，且ITO 在高溫下不穩定，因此近年來有許多研究正在尋找適合取代ITO 的材料，而氧化鋅摻鋁（AZO）同樣具有低電阻率及高穿透率的特性，是適合的材料之ㄧ。
本研究選用AZO 與ITO 兩種靶材，利用成長透明導電薄膜最常使用的方法，即濺鍍法來分別濺鍍AZO 與ITO 薄膜於玻璃基板上，再個別做特性分析。除此之外，因為液相沉積法具有製程簡便、低成本並可大面積生產的優點，故本研究同時利用液相沉積法成長氧化鋅薄膜於玻璃基板上，並摻入鋁以增加其導電性。

Transparent Conductive Oxide thin films (TCO) with low resistivity and high light transmission act as transparent electrode for many kinds of display panel. At present, Indium Tin Oxide (ITO) is common transparent electrode material. Because Indium is classified rare element, and it has toxicity. Moreover ITO is unstable in high temperature. Recent years many researches are searching adaptive materials to replace ITO. Al doped ZnO (AZO) has same characteristics of low resistivity and high light transmission, it is one of the adaptive materials.
In this study, we choice AZO and ITO target. Sputtering is a common method to deposition TCO. We sputtered the AZO film and ITO film on glass substrate and measured the characteristics respectively. In addition, because Liquid Phase Deposition (LPD) has advantages of simple process, low cost and large amount of wafers can be used. Therefore, in this study we growth ZnO thin film on glass substrate simultaneously, and doped Aluminum to increase conductivity.

Chapter 1 1
Introduction 1
1.1 Introduction of Transparent Conductive Oxide thin films (TCO) 1
1.2 The reason to choose ZnO 5
1.3 Background of Zinc Oxide (ZnO) 5
1.4 The reason to choose Al in doping element 6
1.5 The Application of Zinc Oxide 7
1.6 The Application of Indium Tin Oxide (ITO) 7
1.7 Growth mechanism in LPD-ZnO 8
1.8 Motivation 8
1.9 Advantages of LPD 9
1.10 Advantages of Sputtering 9
Reference 13
Chapter 2 16
Experiments 16
2.1 Zinc oxide prepared by LPD 16
2.1.1 Liquid phase deposition system 16
2.1.2 Using liquid phase deposition 16
2.2 Deposition procedures 17
2.2.1 Cleaning Procedures for Glass substrates 17
2.3 Preparation of Deposition Solution 17
2.3.1 Preparation of Zn(NO3)2 Solution 17
2.3.2 Preparation of C6H12N4 Solution 18
2.3.3 Preparation of HNO3 Solution 18
2.4 Growth Procedure 18
2.5 Basic Mechanism 19
2.6 Equipments 19
2.7 Al doped Zinc Oxide and Indium Tin Oxide growth by sputtering 20
2.7.1 Sputtering Technique 20
2.8 Characteristics 21
2.8.1 Physical properties 21
2.8.2 Chemical properties 22
2.8.3 Electrical measurements 22
2.8.4 Optical properties 22
Reference 27
Chapter 3 28
Result and Discussion 28
3.1 Electronic measurement 28
3.1.1 The RF power input influence of the electronic properties 28
3.1.2 The substrate temperature influence of the electronic properties 28
3.1.3 The thermal treatment temperature and environment influence of the electronic properties 29
3.2 The change of the film thickness 30
3.2.1 The different RF power input influence of the film thickness 30
3.2.2 The different substrate temperature influence of the film thickness 31
3.2.3 The different working pressures influence of the film thickness 31
3.3 The structure analysis 31
3.3.1 The RF power input influence of the structure 32
3.3.2 The deposition time influence to the film structure 32
3.3.3 The thermal treatment temperature influence to the film structure 32
3.4 Surface morphology analysis 33
3.4.1 The RF power input influence to the surface morphology 33
3.4.2 The substrate temperature influence to the surface morphology 33
3.4.3 The thermal treatment temperature influence to the surface morphology 33
3.4.4 The thermal treatment environment influence to the surface morphology 34
3.5 The optical properties measurement 34
3.5.1 The RF power input influence to the optical properties 34
3.5.2 The substrate temperature influence to the optical properties 34
3.6 The influence of the deposition rate 35
3.6.1 The RF power input effect on the deposition rate 35
3.7 Physical and chemical analyses of LPD-ZnO thin films 35
Reference 64
Chapter 4 65
Conclusion 65

Chapter 1
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