微波電路發展快速，設計良好的電路倚賴準確可靠的模型。本論文針對相同製程下分析不同閘極長度之金氧半電晶體其輸出特性，將傳統金氧半場效電晶體模型僅能夠描述飽和區特性加以改良使模型可延伸至崩潰區，並將其小訊號線性模型擴展至大訊號非線性模型，利用頻譜、示波器量測來驗證大訊號模型並藉由沃特拉級數分析其不同偏壓下之非線性源變化。
本研究元件採用3顆0.18μm製程金氧半場效電晶體，其閘極長度分別為0.18μm、0.34μm、0.5μm。其論文可分為三個部份。第一部分主要描述其研究不同閘極長度目的以及傳統建立大訊號模型方法。第二部分講述如何建立不同閘極長度之小訊號模型。第三部分講述不同閘極長度的金氧半場效電晶體之大訊號模型驗證以及高功率操作下之非線性特性以及線性度變化情形。

Due to the fast development of the microwave circuits, the circuit design relies on good and accurate model. The research focused on the nonlinear characteristics of the MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) operated under the large signal operating condition. The traditional models only describe the performances at saturation. However, the breakdown characteristics of the MOSFETs in the avalanche breakdown region are not addressed. The presented large signal model could describe the performances of the MOSFET from saturation to breakdown region. In addition, the gate length dependence on the device performances is investigated in the same technology. Finally, this research uses spectrum and waveform measurement to verify the presented large signal model, and the nonlinear sources are analyzed by using Volterra series.
The device under test (DUT) used in this research are three different gate length MOSFETs. The gate lengths are 0.18μm、0.34μm and 0.50μm, and the fingers are 15、20 and 30. This content is composed of three parts. The first part devotes to the introduction of the purpose of different gate length and the methods of conventional large signal model establishment. The second part is to introduce the method for constructing the small and large signal model. The third part is to verify the large signal model with different gate lengths and to analyze the nonlinear characteristics under the large signal operating condition.

目錄 I
圖目錄 III
第一章 緒論 1
1.1 研究動機 1
1.2 模型發展概述 2
1.3 論文架構 3
第二章 非線性量測原理 4
2.1 簡介 4
2.2 電晶體直流電流量測 4
2.3 小訊號散射參數原理與量測 7
2.4 高頻功率量測 9
2.6 去嵌化技術 10
2.7 主動元件非線性特性 10
2.7.1 諧波失真(Harmonic Distortion) 10
2.7.2 1dB增益壓縮點 (1dB Compression Point；P1dB) 11
2.7.3 交互調變失真(Intermodulation Distortion；IMD) 12
2.7.4 三階截距點 (Third-Order Intercept Point；OIP3) 12
第三章 金氧半場效電晶體小訊號模型建立 14
3.1 簡介 14
3.2 小訊號萃取內質參數之流程 14
3.2.1 外質參數萃取 14
3.2.2 內質參數萃取 16
3.3 小訊號散射參數驗證 18
第四章 金氧半場效電晶體大訊號模型建立與驗證 31
4.1 簡介 31
4.2 高頻非線性模型 31
4.3 不同閘極長度模型之擬合結果 33
4.4 非線性源分析 39
第五章 結論 42
參考文獻 43

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