本文分析崩潰電感機制引起的三階調變項減少，首次利用沃特拉模型建立含物理機制之崩潰網路大訊號模型，應用於高頻(RF)金氧半場效電晶體(MOSFET)中。為了較高速的操作與改善在高頻的特性，互補式金氧半場效電晶體製程技術持續地縮減。當元件通道長度越短，導致電場強度越強，越容易使元件崩潰。因此正確的元件崩潰機制越益重要。
從本文大訊號模型分析中，計算出當崩潰電感產生時，導致整體的高階非線性減小。證實出此為非線性轉導與崩潰電感之非線性互相作用而產生抵銷之機制。且當量測到輸入三階交叉點(IIP3)於某些偏壓下越高，同時崩潰電感之非線性源為主宰項。因此，雪崩崩潰延遲導致的電感行為，會增進互補式金屬氧化物半導體之功率放大器操作於接近崩潰之區域。

The reduction of intermodulation distortion (IMD) due to inductive behavior for the radio frequency (RF) metal-oxide-semiconductor field-effect transistors (MOSFETs) is explored using Volterra series based on the nonlinear model incorporating the physical inductive breakdown network for the first time. For faster operation and to improve significantly the characteristic, the CMOS technology is continuously scaled down. The shorter channel length enhances the higher electric field effects, and thus results in breakdown easily. Therefore, the breakdown mechanism is more significant for accurate device characterization.
From our analysis of the large signal model, the calculated total magnitude of the high order nonlinearities is lower when the breakdown inductance occurs. It has been proved that the cancellation between nonlinear transconductance and reactive nonlinearity from inductance. Which the higher input third-order intercept point (IIP3) is obtained at the biases where the breakdown inductance nonlinearity dominates. Therefore, the inductive behavior due to avalanche delay can be beneficial to the CMOS power amplifier (PA) when operating near the breakdown region.

目錄-----------------------------------------------------------------------------------------i
圖目錄-----------------------------------------------------------------------------------iii
表目錄------------------------------------------------------------------------------------iv
第一章 緒論-----------------------------------------------------------------------------1
1.1 研究動機------------------------------------------------------------------1
1.2 發展概數-----------------------------------------------------------------------2
1.3 論文架構-----------------------------------------------------------------------3
第二章 小訊號等效模型---------------------------------------------------------5
2.1 簡介-----------------------------------------------------------------------------5
2.2電晶體直流電流特性---------------------------------------------------------5
2.3 微波網路分析儀與測量之散射參數方法--------------------------------8
2.4金氧半場效電晶體飽和區小訊號模型----------------------------------10
2.5金氧半場效電晶體崩潰區小訊號模型----------------------------------17
第三章 金氧半場效電晶體沃特拉崩潰大訊號模型建立----------------------23
3.1 簡介---------------------------------------------------------------------------23
3.2 沃特拉模型介紹------------------------------------------------------------23
3.3 高頻非線性沃特拉崩潰模型之建立-----------------------------------26
3.4 非線性沃特拉大訊號模型驗證------------------------------------------31
第四章 大訊號沃特拉模型之特性分析-----------------------------------------35
4.1 簡介---------------------------------------------------------------------------35
4.2 非線性源與線性度------------------------------------------------------35
4.3非線性源定性分析---------------------------------------------------------37
第五章 結論----------------------------------------------------------------------------40
參考文獻--------------------------------------------------------------------------------41

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