本論文研究利用射頻濺鍍系統在 p-型矽基板上成長 n-型氧化鋅薄膜，並導
入氧化鋁作為其絕緣緩衝層，使其構成之 pin 二極體。樣品製備過程會先在矽基
板表面沉積一層純鋁，之後在氧氣環境中退火使鋁與原生氧化矽分別氧化還原為
氧化鋁與純矽，進而改善接面以利成長出高品質之氧化鋅薄膜。改變不同氧化鋅
之濺鍍功率，以求高品質的最佳鍍率；改變不同氧化鋅成長溫度，以改善晶體結
構並提升其晶體品質；利用不同溫度之熱退火改變氧化鋅晶粒大小，當晶粒越大
時晶界分布數目會跟著減少，漏電流亦隨之減小。利用 X-ray 繞射之非對稱面掃
描，如: phi scan、GIXRD 和 pole figure，分析樣品晶體結構與品質；利用掃描式
電子顯微鏡觀察樣品熱退火處理後之表面形貌變化；利用穿透式電子顯微鏡更進
一步觀察樣品之晶體微結構；將光致螢光光譜作多峰擬合，得到成長之氧化鋅能
隙，分析其能帶邊緣結構和缺陷密度；分析電性量測之漏電流與能帶結構，瞭解
pin 二極體特性。

This thesis investigates the pin diodes which were fabricated with n-type ZnO thin
films on p-type Si by rf-sputtering, using Al 2 O 3 as an insulated buffer layer. A pure Al
layer was first deposited on bare Si substrate, which was then annealed in O 2 ambient,
all meant to reduce the native SiO 2 into Si and have Al 2 O 3 formed as a crystalline layer
for high quality ZnO growth. Different sputtering powers for the ZnO meant to search
the best deposition rate. Different growth temperatures for the ZnO meant to improve
the crystal structure and quality. Different annealing temperatures for the ZnO resulted
in different grain sizes. With larger grains, the leakage current was lowered, suggesting
that grain boundaries are responsible for the leakage current. In-plane XRD, pole
figures, and GIXRD were used to exam the crystal structure and quality. SEM was used
to observe the surface morphology. TEM was used to observe the crystal micro-
structure. The results of PL data with multi-peak analysis give the band gap, defect
density, and structure of near-band edge. Through comparisons of leakage current and
energy band structure, the electrical measurement can be used to analyze the
characteristic of pin diode.

論文審定書..................................................................................................................... i
致謝............................................................................................................................... ii
摘要.............................................................................................................................. iii
Abstract ....................................................................................................................... iv
目錄............................................................................................................................... v
圖目錄.......................................................................................................................... vii
表目錄........................................................................................................................... xi
第一章 緒論.................................................................................................................. 1
1-1 前言 ........................................................................................................................1
1-2 氧化鋅(ZnO)特性 ................................................................................................... 1
1-3 氧化鋅(ZnO)成長方式 ............................................................................................ 3
1-4 研究動機 ................................................................................................................ 4
第二章 實驗儀器及理論基礎......................................................................................... 5
2-1 濺鍍(sputtering)系統及原理.................................................................................... 5
2-1-1 濺鍍系統 ............................................................................................................. 5
2-1-2 濺鍍原理 ............................................................................................................. 6
2-2 X 光繞射儀(X-ray diffraction, XRD) ........................................................................ 9
2-2-1 X-ray 特性及原理................................................................................................. 9
2-2-2 X-ray 繞射儀掃描模式........................................................................................ 11
2-3 掃描式電子顯微鏡(SEM) ..................................................................................... 13
2-4 穿透式電子顯微鏡(TEM) ..................................................................................... 14
2-5 光致螢光(PL) ....................................................................................................... 15
2-6 電性量測 .............................................................................................................. 16
2-6-1 pin 二極體 .......................................................................................................... 16
2-6-2 傳輸線模型(TLM) .............................................................................................. 18
第三章 實驗設計.......................................................................................................... 19
第四章 實驗結果與分析............................................................................................... 21
4-1 射頻濺鍍功率對氧化鋅薄膜之影響 ....................................................................... 21
4-1-1 成長參數 ........................................................................................................... 21
4-1-2 X-ray 分析結果................................................................................................... 22
4-2 成長溫度對氧化鋅薄膜之影響 .............................................................................. 26
4-2-1 成長參數 .......................................................................................................... 26
4-2-2 X-ray 分析結果.................................................................................................. 27
4-3 熱退火溫度對氧化鋅薄膜之影響 .......................................................................... 32
4-3-1 成長參數 ......................................................................................................... 32
4-3-2 X-ray 分析結果.................................................................................................. 33
4-3-3 SEM 分析結果 .................................................................................................. 41
4-3-4 TEM 分析結果 .................................................................................................. 43
4-3-5 PL 分析結果 ..................................................................................................... 46
4-3-6 I-V 電性量測結果 .............................................................................................. 48
第五章 結論................................................................................................................ 51
參考文獻...................................................................................................................... 52
附錄.............................................................................................................................. 56

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