在這項研究中，我們通過電子束蒸發將鍺沉積在高電阻率矽基板上，並通過快速熱退火不同溫度得到矽鍺薄膜。用四層模型分析X射線全反射（XRR）數據，得到厚度，粗糙度和質量密度。並且與X射線繞射（XRD）掃描，低略角繞射（GIXRD）掃描和穿透式電子顯微鏡（TEM）影像進行比較。根據RT曲線之負溫度係數的電性表現出半導體行為，能與熱活化能關係的功能良好擬合。二維行為顯示在300K的退火至700℃的磁阻電阻率可以由弱局限關係模擬。

In this work, we deposited germanium on high-resistivity silicon substrates by E-beam evaporation, and by annealing different temperature understanding the crystalline phase of thin film. X-ray reflectivity (XRR) data were analyzed with a four-layer model to obtain the thickness, roughness and mass density. The comparison was then made with XRD scans, GIXRD scans and direct TEM imaging. The electrical properties according to the RT curves demonstrate semiconducting behaviors, as judged by their negative temperature coefficients, fit well with a functional of quad-energy Arrhenius relation representative of band conduction mechanisms. Two-dimensional behavior showed at 300K magneto-resistivity of the sample annealed to 700˚C which can modeled by weak localization.

論文審定書 i
誌謝 ii
摘要 iii
Abstract iv
目錄 v
圖次 vi
表次 viii
I. Introduction 1
II. Experimental 3
III. Results and Discussions 5
Structural Analysis 5
Electrical Analysis 11
IV. Conclusions 16
References 17

[1] GruhleA 1994 SiGe Heterojunction Bipolar Transistors Silicon-Based Millimeter-Wave Devices ed J-FLuy andPRusser (Berlin, Heidelberg: Springer Berlin Heidelberg) pp 149–92
[2] NumberP 1984 United States Patent [19] [54] 0–4
[3] VoinigescuS P, DicksonT O, BeerkensR, KhalidI andWestgaardP 2004 A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs Dig. Pap. 2004 Top. Meet. onSilicon Monolith. Integr. Circuits RF Syst. 2004. 111–4
[4] FischettiMV. andLauxS E 1996 Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys J. Appl. Phys. 80 2234
[5] Christian 2013 Wet-Chemical Etching of Silicon Appl. Note 11–3
[6] UberuagaB, LeskovarM, SmithA, JónssonH andOlmsteadM 2000 Diffusion of Ge below the Si(100) Surface: Theory and Experiment Phys. Rev. Lett. 84 2441–4
[7] DolbakA E andOlshanetskyB Z 2006 Ge diffusion on Si surfaces Cent. Eur. J. Phys. 4 310–7
[8] OginoM, OanaY andWatanabeM 1982 The Diffusion Coefficient of Germanium in Silicon Phys. Status Solidi A 72 535–41
[9] IordanskiiSV, LyandagellerY B andPikusG E 1994 Weak-Localization in Quantum-Wells With Spin-Orbit Interaction Jetp Lett. 60 206–11
[10] HilkeM, MassicotteM, WhitewayE andYuV 2014 Weak localization in graphene: theory, simulations, and experiments. ScientificWorldJournal. 2014 737296
[11] SpiritoD, DiGaspareL, EvangelistiF, DiGaspareA, GiovineE andNotargiacomoA 2012 Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas Phys. Rev. B - Condens. Matter Mater. Phys. 85 1–5
[12] ShekharC, KampertE, FoersterT, YanB, NayakA K, NicklasM andFelserC 2015 Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators arXiv 1502.00604
[13] LuH-Z andShenS-Q 2014 Weak localization and weak anti-localization in topological insulators Arxiv 11
[14] Garcia AguilarJ H, CummingsA W andRocheS 2017 Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures Nano Lett. acs.nanolett.7b02364
[15] GallacherK, VelhaP, PaulD J, MaclarenI, MyronovM, LeadleyD R, GallacherK, VelhaP, PaulD J, MaclarenI, MyronovM andLeadleyD R 2014 Ohmic contacts to n-type germanium with low specific contact resistivity Ohmic contacts to n-type germanium with low specific contact resistivity 22113 2012–5
[16] WieserU, IamundoD, KunzeU, HackbarthT andKönigU 2000 Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching Semicond. Sci. Technol. 15 862–7
[17] SiS, ChannelH, YeoY C, MemberS, SubramanianV, KedzierskiJ andXuanP 2000 Nanoscale Ultra-Thin-Body Silicon-on-Insulator 21 161–3
[18] MizunoT, TakagiS, SugiyamaN, SatakeH, KurobeA andToriumiA 2000 Electron and hole mobility enhancement in strained-Si MOSFET’s on SiGe-on-insulator substrates fabricated by SIMOX technology IEEE Electron Device Lett. 21 230–2
[19] SimonS H 2013 Solid State Basics J. Chem. Inf. Model. 53 1689–99
[20] Kittel Charles 1992 Introduction to Solid State Physics
[21] KubeliI andTřískaA 1973 Magnetoresistance in amorphous germanium Czechoslov. J. Phys. 23 115–22
[22] KubelíkI andTřískaA 1973 Two types of magnetoresistance in amorphous germanium Czechoslov. J. Phys. 23 123–9