本論文將 探討單層與多量子點材料在不同狀況下的載運動機制，我們藉由超快時間解析激發－探測光譜技術 (Time-resolved pump-probe technique)來探 討不同 激發功率、環境溫度及激發波長的狀況下之 砷化銦 /砷化鎵量子 點材料之載子動力學，並以量侷限效應、瓶頸及歐傑來解釋的鬆弛行為。本論文亦提及單層與 多層量子點材料在不同溫度下的光致螢譜表 現，單層與多量子點有不同的表之光致螢譜具兩個 峰值 1.22 eV與 1.27 eV；而多層量子點其主要峰值位於 ；而多層量子點其主要峰值位於 1.23eV。

The aim of this study is to examine the energy released due to excitation and recombination of InAs/GaAs quantum dots sample at difference condiditons , such as power density, excited wavelength and surrounding temperature by time-resolved pump-probe technique(TRPP).In addition, we measured the temperature dependent photoluminescence (PL) spectroscopy. We found that multi-layers InAs/GaAs quantum dots reveal a peak position at 1.23eV. However ,single layer InAs/GaAs quantum dots reveal two peaks at 1.27 eV and 1.22 eV.
In TRPP spectroscopy, we found that higher power pump makes the higher decay rate. At surrounding temperature 150 K, we measured the fastest decay rate. In this study, we tried to explain these phenomenon with pump-probe carrier dynamics and quantum confinement effect.

目錄
內容
致謝 ................................ ................................ ................................ ........................ ii
摘要 ................................ ................................ ................................ ...................... iii
Abstract ................................ ................................ ................................ ................. iv
目錄 ................................ ................................ ................................ ........................ v
圖目錄 ................................ ................................ ................................ .................. vii
表目錄 ................................ ................................ ................................ .................... 1
第一章 緒論 ................................ ................................ ................................ .... 2
量子點簡介與發展 ................................ ................................ ............ 2
文獻探討 ................................ ................................ ............................ 4
研究動機 ................................ ................................ ............................ 8
第二章 實驗原理與架設 ................................ ................................ ................ 9
超快雷射激發－探測原理 ................................ ................................ 9
實驗架設 ................................ ................................ .......................... 12
2.2.1 單一波長激發 -探測實驗架設 ................................ ............... 13
2.2.2 不同波長激發 -探測實驗架設 ................................ ............... 14
2.2.3 光致螢譜系統 ................................ ................................ . 15
鎖相放大器 ................................ ................................ ...................... 16
第三章 載子動力學 ................................ ................................ ...................... 19
激發電子能量釋放過程 ................................ ................................ .. 19
量子點的能釋放機制 ................................ ................................ .. 20
電子與洞的結合機制 ................................ ................................ .. 20
載子衰退率 ................................ ................................ ...................... 22
vi
激發載子濃度與光束大小計算 ................................ ...................... 24
第四章 樣品分析與討論 ................................ ................................ .............. 27
樣品資訊 ................................ ................................ .......................... 27
光致螢譜分析 ................................ ................................ .......... 28
時間解析 激發探測分................................ ................................ .. 40
4.3.1 相同波長激發探測－以功率為變因 ............................. 41
4.3.2 不同波長激發探測 ................................ ................................ . 48
第五章 結論 ................................ ................................ ................................ .. 58
參考資料 ................................ ................................ ................................ .............. 60

參考 資料
1H. Drexler, D. Leonard, W. Hansen, J.P. Kotthaus and P. M. Petroff ,” Spectroscopy of Quantum Levels in Charge- Tunable InGaAs Quantum Dots”,Phys. Rev. Lett. 73, 2252 (1994)
2Haiping Yu, Sam Lycett, Christine Roberts, and Ray Murray ,” Time resolved study of self assembled InAs quantum dots”,Appl. Phys. Lett. 69, 4087 (1996)
3M. T. Todaroa, V. Tasco, M. De Giorgi, L. Martiradonna, G. Rainò, M. De Vittorio, A. Passaseo, and R. Cingolani,,” High-efficiency 1.3μm InGaAs∕GaAs quantum-dot microcavity light-emitting diodes grown by metalorganic chemical vapor deposition”,Appl. Phys. Lett. 86, 151118 (2005)
4M. V. Maxmov, L. V. Asryan, Y. M. Shernyakov, A. F. Tsatulinikov, I. N. Kaiauder, V. V. Nikolaev, A. R. Kovsh, S. S. Mikkin, V. M. Zhukov, Z. I. Alferov, N. N. Ledenstov, and D. Bimberg, IEEE J. Sel. Top. Quantum Electron. 37,676 (2001)
5詹國禎 , “砷化銦量子點的光電特性 ”,物理雙月刊 ,廿五卷三期 ,頁 1-7 (2003)
6N. Horiguchi, T. Futatsugi, Y. Nakata, and N. Yokoyama,"Electron transport properties through InAs self-assembled quantum dots in modulation doped structures”, Appl. Phys. Lett. 70, 2294 (1997)
7倪澤恩 ,”基礎固態物理 ”,五南出版社 ,329-336 (2011)
8Norris DJ, Nirmal M, Murray CB, Sacra A, Bawendi . "Size dependent optical spectroscopy of II-VI semiconductor nanocrystallites (quantum dots). "Z. Phys. D: At., Mol. Clusters. 1993, 26, 355-357.
9D. Sun , H.J. Sue, "Tunable ultraviolet emission of ZnO quantum dots in transparent poly(methyl methacrylate)", Appl. Phys. Lett. 94, 253106 (2009)
10L. L. Peng, Y. H. Wang, C. Y. Li, “Ultraviolet-Blue Photoluminescence of ZnSe Quantum Dots” Journal of Nanoscience and Nanotechnology Vol.10, 2113–2118, (2010)
11T. Kada, S. Asahi , T. Kaizu1, Y. Harada, R. Tamaki2, Y. Okada2 & T. Kita , ”Efficient two-step photocarrier generation in bias-controlled InAs GaAs quantum dot superlattice intermediate-band solar cells” Nature. 10.1038 (2017)
12邱文政 ,“金屬有機化學氣相沉積 ”,Nano Communication 22卷 28-30 (2012)
13D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P.Denbaars, P.M. Petroff, “Direct
60
formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces”,Appl. Phys. Lett. 63, 3203 (1993).
14L. Chu, M. Arzberger, G. Bohm and G. Abstreiter, “Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots”,J. Appl. Phys. 85 2355 (1999)
15A. I. Ekimov, Al. L. Efros and A. A. Onushchenko,” Quantum size effect in semiconductor microcrystals”, Sol. State Comm.56, 921 (1985).
16T. Inoshita and H. Sakaki,,” electron relaxation in a quantum dot: significance of multiphonon processes”Phys.Rev.B.46,11(1992)
17Q. Li, Z.Y. Xu and W.K. Ge,” Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump–probe technique”, Sol. State Comm.Vol.115 p.105 (2000)
18J. Urayama, T. B. Norris, J. Singh and P. Bhattacharya, “Observation of phonon bottleneck in quantum dot electronic relaxation”, Phys.Rev.Lett.86.4930 (2001)
19D. Bimbger , N. N. Ledentso and M. Grundmann,” Quantum dot heterostructures: fabrication, properties, lasers”, Semiconductor ,Vol.32,4 (1998)
20Z. Y. Xu, Z. D. Lu, X. P. Yang, Z. L. Yuan, W. K. Ge, Y. Wang, J. Wang, and L. L. Chang, “Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates”,Phys. Rev. B Vol. 54, 16 (1996)
21Xuejun Lu, Jarrod Vaillancourt, and Hong Wen,” Temperature-dependent energy gap variation in InAs/GaAs quantum dots”, Appl. Phys. Lett. 96, 173105 (2010)
22T. Müller, F. F. Schrey, G. Strasser, and K. Unterrainer,,” Ultrafast intraband spectroscopy of electron capture and relaxation in InAs/GaAs quantum dots” Appl. Phys. Lett. 83, 3572 (2003)
23Xiaodong Mu, Yujie J. Ding, and Boon S. OoiMark Hopkinson,” Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs∕GaAs quantum wells
61
based on time-resolved pump and probe differential photoluminescence”, Appl. Phys. Lett. 89, 181924 (2006)
24S.I. Jung, H.Y. Yeo, I. Yun, J.Y. Leem, I.K. Han, J.S. Kim, J.I. Lee,” Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots”, Physica E 33 (2006)
25Thomas F. Boggess, L. Zhang, D. G. Deppe, D. L. Huffaker, and C. Cao,” Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots”,Appl. Phys. Lett. 78, 276 (2001)
26T. Piwonski, A. V. Uskov, I. O’Driscoll, J. Houlihan, G. Huyet, and R. J. Manning,” Carrier capture dynamics of InAs/GaAs quantum dots”, Appl. Phys. Lett. 90, 122108 (2007)
27A. Mohanta, D.J. Jang , F,Y Wang, J.S Wang, Effect of GaAs spacer layer thickness on opticeal properties of multi-stacked InAs/GaAs quantum dots , Journal of Luminescence 175,16-12 (2016)
28Y. D. Glinka, N. H. Tolk, X. Liu, Y. Sasaki, and J. K. Furdyna, “Electro-optic nature of ultrafast pump-probe reflectivity response from multilayer semiconductor heterostructures”, Appl. Phys. Lett, 103, 043708 (2008)
29王銘崧 ”摻雜矽氮化銦薄膜之載子釋放機制研究 ”國立中山大學物理系碩士論文 (2011)
30J.Shah,“Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures”,Springer (1998)
31I.N.Stranski, L.Krastnow, Sitzungsber, A.W.Wien, Math Naturwiss. K1,Abt.2B146,797(1998)
32W.Shockley, and T. Read, Phys. Rev.87 835 (1952)
33R.N.Hall, Phys.Rev.87 387 (1952)
34Palik, E. D., Handbook of Optical Constants of Solids, Academic Press, (1998)
35D. E. Aspnes, S. M. Kelso, R. A. Logan and R. Bhat. Optical properties of AlxGa1−xAs, J. Appl. Phys. 60, 754-767 (1986)
36E. Estacio, M. H. Pham, S. Takatori, M. C.Raduban, T.Nakazato,T. Shimizu, N. Sarukura, A. Somintacb, M. Defensor, A. Garcia and A. Salvador，Enhanced
62
terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures "IEEE,10.1109 (2009)
37Y.P. Varshni, “Temperature dependence of the energy gap in semiconductor”,Physica 34,149 (1967)
38 W. H. Chou,”Time-resolved photoluminescence study of M-plane ZnO”, NSYSU, 41-49(2013)
39D. H. Chi, L.T. Binh, L. D. Khanh , N.N. Long, Band-edge photoluminescence in nanocrystalline ZnO:In films prepared by electrostatic spray deposition,Appl. Surf Sci 252,2770( 2006)
40Jongbum Nah,”Thermal Activation of Carriers in InGaAs/InAs/GaAs Quantum Dots” Jour. Kor. Phys. Soc., 54, 1 (2009)
41J. Shah, Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures, in: M. Cardona, P. Fulde, K. von Klitzing, H.J. Queisser (Eds.), Solid-State Sciences, Springer Series, Vol. 115, Springer, Berlin, 1996 (chap. 3).