本實驗是在923K的溫度下，使用磁控薄膜濺鍍機在c面藍寶石基板上製程In2O3/ZnO的超晶格結構，超晶格結構具有量子井的效應。透過改變濺鍍時的功率、沉積溫度、和週期數嘗試得到最佳化的超晶格參數，透過X射線衍射(XRD)、低掠角X射線衍射(GIXRD)和Phi角掃描檢視超晶格的結構，判斷結構是否為磊晶，再從X射線反射率(XRR)得知其膜厚、密度及粗糙度；先從單層膜找到最適合製程超晶格的結構，比較兩材料長在基板上的特性，進一步製程超晶格結構，在針對超晶格介面處電子結構做討論分析，也必須透過電子顯微鏡(TEM)去了解薄膜沉積的情況。

Superlattices of shallow quantum well structures with alternating layers of In2O3 and ZnO have been prepared by sputtering at 923K on c-sapphire substrates. Optimization of the processing parameters was attempted through varying the sputtering power, deposition temperature, and number of periods. X-ray reflectivity (XRR) assisted with analytical data fittings was used to extract the thickness, density, and roughness of the samples, while X-ray diffraction (XRD), Grazing Incidence X-ray Diffraction (GIXRD), and phi scans were adopted to verify their epitaxy. The epitaxial qualities for the samples with In2O3 as a starting layer are superior to those starting with ZnO based on transmission electron microscopy (TEM) atomic imaging and electron diffraction.

論文審定書 i
論文公開授權書 ii
誌謝 iii
摘要 iv
Abstract v
目錄 vi
圖次 vii
表次 ix
I. Introduction 1
II. Experiment 2
A. Sample series 2
B. Sample series 3
C. Sample series 4
III. Results and Discussion 5
A series comparison 5
B series comparison 12
C series comparison 15
IV. Conclusion 20
V. References 21

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