本研究採用背蝕型結構用以製作薄膜體聲波共振器，首先使用雙靶直流濺鍍系統， 沉積Pt 電極於Ti 晶種層上(Pt/Ti/SiNx/Si)，以改善Pt 電極特性以及與SiNx/Si 基板間的附著性。接著利用射頻磁控濺鍍法來成長氧化鋅薄膜，分別以基板加溫及退火製程來改善氧化鋅薄膜特性。並以Al、Mo 和Pt 為頂電極製成FBAR 元件，並比較其頻率響應特性。當以射頻磁控濺鍍法在Pt/Ti/SiNx/Si 基板上沈積氧化鋅時，由於氧化鋅薄膜與Pt 電極間的晶格不匹配，及較快的沈積速率， 在薄膜沈積的同時就會造成鋅間隙及氧空缺的產生， 當薄膜中有不同缺陷的產生就會有應力的存在，因此以退火的製程來改善氧化鋅薄膜的品質，並將不同退火溫度下之氧化鋅薄膜製作成FBAR 元件來探討其頻率響應與薄膜應力之間的影響。
實驗結果發現Al 電極非常適合應用在FBAR 元件上，在三種不同頂電極之中，Al 電極有較佳的頻率響應特性。經400℃退火後的氧化鋅薄膜有較強的c 軸優選、表面緻密且平滑和低應力之特性，非常適合製作高Q 值的FBAR 元件，其基頻共振頻率為2.21GHz、有效機電耦合係數k eff 為2.88％ 和品質因數Q 值為2659。

In this study, the FBAR devices fabrication was used by back-etched type. The titanium (Ti) seeding layer and platinum (Pt) bottom electrode were deposited by DC sputtering system using a dual gun. To improve the platinum (Pt) adhesion, a seeding layer titanium (Ti) is used. The piezoelectric zinc oxide (ZnO) thin films were deposited by RF reactive
magnetron sputtering. By increase the substrate temperature and annealing treatment in order to improve the ZnO thin films quality. The FBAR device was fabricated with different top electrode of Al, Mo and
Pt that was compared different frequency response characteristic. When ZnO thin films are deposited on Pt/Ti/SiNx/Si substrate by RF reactive magnetron sputtering, due to the lattice mismatch between the
Zno thin film and Pt electrode and rapid deposition rate, the ZnO films have high Zn interstitials and O vacancy, which introduce the stress in ZnO films. By thermal annealing treatment the stress could be relaxed and the defects in ZnO films could be suppressed. We used the ZnO films at the different annealing temperature to fabricated the FBAR device, and also discussed the resonant characteristics of the FBAR device with the stress in the ZnO films.
Top electrode of Al is suitable for using as electrode materials for FBAR device. The Al top electrode revealed the best frequency response
characteristic among the various top electrodes in this research. Postdeposition annealing at 400℃makes ZnO films more suitable for high Q FBAR device, it makes ZnO films with stronger c-axis (002)
orientation, denser structure, smoother surface and relieved stress. The resonant frequency, the effective electromechanical coupling coefficient ( k eff ) and the quality factor (Q) were about 2.21GHz, 2.88% and 2659, respectively.

目錄
摘要...................................................................................... Ⅰ
目錄...................................................................................... Ⅲ
圖表目錄.............................................................................. Ⅵ
第一章 前言…....................................................................... 1
1.1 研究背影與動機............................................................. 1
1.2 薄膜塊體聲波共振器簡介............................................. 2
1.3 研究內容......................................................................... 5
第二章 理論分析................................................................... 8
2.1 壓電模數......................................................................... 8
2.2 晶體對稱性................................................................... 10
2.3 晶體學........................................................................... 11
2.4 壓電理論....................................................................... 12
2.4.1 壓電效應................................................................... 13
2.4.2 壓電方程式............................................................... 14
2.4.3 壓電材料................................................................... 16
2.5 氧化鋅結構與特性....................................................... 17
2.6 薄膜沈積原理............................................................... 18
2.6.1 沉積現象................................................................... 18
2.6.2 薄膜表面與截面結構............................................... 19
2.7 反應性射頻磁控濺鍍原理........................................... 20
2.7.1 輝光放電................................................................... 20
2.7.2 磁控濺射................................................................... 21
2.7.3 射頻濺射................................................................... 21
2.7.4 反應性濺射............................................................... 22
2.8 Mason model 等效電路分析..................................... 23
2.9 FBAR 結構及原理....................................................... 25
2.9.1 keff 之測量................................................................ 26
2.9.2 Q 值之測量............................................................... 26
第三章 實驗步驟................................................................ 28
3.1 直流濺鍍系統與薄膜沈積........................................... 28
3.2 射頻濺鍍系統與薄膜沈積........................................... 28
3.3 薄膜特性分析............................................................... 29
3.3.1 X 光繞射(X-Ray Diffraction, XRD)分析................. 29
3.3.2 掃描式電子顯微鏡(Scanning Electron Microscopy,
SEM)分析.................................................................. 30
3.3.3 原子力顯微鏡(Atomic Force Microscopy, AFM)分
析............................................................................... 30
3.4 FBAR 元件製作流程................................................... 31
3.4.1 RCA 清洗基板.......................................................... 31
3.4.2 SiNx 薄膜沉積.......................................................... 32
3.4.3 背部蝕刻窗口與底電極的製作............................... 32
3.4.4 KOH 蝕刻背部空腔................................................. 32
3.4.5 壓電層的製作........................................................... 32
3.4.6 頂電極的製作........................................................... 33
3.4.7 反應式離子蝕刻....................................................... 33
3.5 FBAR 元件測量........................................................... 33
第四章 結果與討論............................................................ 35
4.1 基板加溫沈積氧化鋅之實驗探討............................... 35
4.1.1 X 光繞射(X-Ray Diffraction, XRD)分析................. 35
4.1.2 掃描式電子顯微鏡(Scanning Electron Microscopy,
SEM)分析.................................................................. 36
4.1.3 原子力顯微鏡(Atomic Force Microscopy, AFM)分
析............................................................................... 37
4.2 室溫二階段沈積氧化鋅壓電薄膜之退火研究........... 39
4.2.1 X 光繞射(X-Ray Diffraction, XRD)分析................. 39
4.2.2 掃描式電子顯微鏡(Scanning Electron Microscopy,
SEM)分析.................................................................. 41
4.2.3 原子力顯微鏡(Atomic Force Microscopy, AFM)分
析............................................................................... 42
4.3 FBAR 元件量測........................................................... 43
4.3.1 元件量測結果與探討............................................... 44
第五章 結論........................................................................ 47
參考文獻............................................................................. 49

圖表目錄
圖1-1 FBAR 元件的(a)側視面，(b)上視圖..................... 58
圖1-2 體聲波元件的類型.................................................. 59
圖2-1 單位晶胞應力示意圖.............................................. 60
圖2-2 壓電效應，(a)正壓電效應，(b)逆壓電效應........ 61
圖2-3 氧化鋅(ZnO)結構.................................................... 62
圖2-4 薄膜沈積步驟，(a)成核，(b)晶粒成長，(c)晶粒聚結，(d)縫道填補，(e)薄膜的沈積................................... 63
圖2-5 濺鍍參數對沈積薄膜之影響.................................. 64
圖2-6 直流輝光放電結構與電位分佈圖.......................... 65
圖2-7 平面型圓形磁控之結構圖...................................... 66
圖2-8 平面磁控結構及電子運動路徑.............................. 67
圖2-9 反應性濺射之模型.................................................. 68
圖2-10 FBAR 幾何結構圖................................................. 69
圖2-11 Mason model 等效電路...................................... 69
圖2-12 不同頂電極材料之S 參數模擬圖........................ 70
圖2-13 聲波在高聲波能量反射介面的聲波反射示意圖 71
圖3-1 直流及射頻磁控濺鍍系統...................................... 72
圖3-2 FBAR 製作流程圖................................................... 73
圖3-3 舉離法...................................................................... 74
圖4-1 不同基板溫度沈積氧化鋅薄膜之XRD 圖，(a) 150℃，(b)200℃，(c)250℃，(d)300℃....................... 75
圖4-2 基板溫度與氧化鋅(002)XRD 繞射強度之關係圖76
圖4-3 不同基板溫度沈積氧化鋅薄膜之SEM 表面圖，(a)150℃，(b)200℃，(c)250℃，(d)300℃ ...................... 77
VII
圖4-4 不同基板溫度沈積氧化鋅薄膜之SEM 剖面圖，(a)150℃，(b)200℃，(c)250℃，(d)300℃ ...................... 78
圖4-5 不同基板溫度沈積氧化鋅薄膜之AFM 圖，(a)150℃，(b)200℃，(c)250℃，(d)300℃....................... 79
圖4-6 氧化鋅之表面粗糙度與不同沈積溫度之關係圖.. 80
圖4-7 氧化鋅在不同基板溫度下之沈積率...................... 80
圖4-8 室溫二階段沈積氧化鋅壓電薄膜之XRD 圖......... 80
圖4-9 氧化鋅在不同退火溫度之XRD 圖，(a)200℃，(b)300℃，(c)400℃，(d)500℃，(e)600℃ ..................... 82
圖4-10 退火溫度與氧化鋅薄膜(002)繞射峰之FWHM 之關係圖................................................................................. 83
圖4-11 退火溫度與氧化鋅薄膜(002)繞射峰角度之關係圖......................................................................................... 83
圖4-12 氧化鋅經不同溫度退火之SEM 表面圖，(a)200℃，(b)300℃，(c)400℃，(d)500℃，(e)600℃... 84
圖4-13 氧化鋅經不同溫度退火之SEM 剖面圖，(a)200℃，(b)300℃，(c)400℃，(d)500℃，(e)600℃ .. 85
圖4-14 氧化鋅經不同溫度退火之AFM 圖，(a)RT，(b)200℃，(c)300℃，(d)400℃，(e)500℃，(f)600℃.... 86
圖4-15 退火溫度與表面粗糙度之關係圖........................ 87
圖4-16 FBAR 元件上視圖................................................. 88
圖4-17 FBAR 元件背部蝕刻窗口圖................................. 88
圖4-18 FBAR 元件剖面圖................................................. 89
圖4-19 虛部阻抗對頻率響應圖........................................ 90
圖4-20 不同頂電極之FBAR 元件訊號量測圖，(a)Al，(b)Mo，(c)Pt ........................................................................... 91
圖4-21 不同退火溫度之氧化鋅薄膜所製作之FBAR 元件訊號量測圖，(a)200℃，(b)300℃，(c)400℃，(d)500℃，(e)600℃.............................................................. 93
表一 陶瓷濾波器、表面聲波濾波器、FBAR 濾波器比
較................................................................................ 94
表二 各種材料及空氣的聲波阻抗值................................ 94
表三 張量表示法與矩陣表示法........................................ 95
表四 正逆壓電效應的表示式............................................ 95
表五 七大晶系與壓電晶體點群關聯................................ 96
表六 氧化鋅與氮化鋁特性................................................ 97
表七 氧化鋅(ZnO)基本特性表.......................................... 98
表八 各層薄膜的參數........................................................ 99
表九 直流磁控濺鍍法沉積金屬之系統參數.................. 100
表十 加溫沈積氧化鋅之系統參數.................................. 101
表十一 室溫兩階段沈積氧化鋅之系統參數.................. 102
表十二 氧化鋅(ZnO)的JCPDS Data ............................ 103
表十三 基板加溫與兩階段濺鍍之參數.......................... 104
表十四 電極材料參數表.................................................. 104
表十五 訊號量測結果...................................................... 105
表十六 經不同溫度退火之氧化鋅晶格參數表.............. 105

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