通過原子層沉積，在177℃下將樣品成長於C面藍寶石基板、（100）方向的Si基板和（111）方向的Si上成長ZnO / GaO x超晶格結構，為了有系統地尋找磊晶條件，首先成長了300循環的單層膜結構，之後將ZnO和GaOx之間的循環數比例保持在3:2。總週期數固定6次進行氧化鎵層數變化，成長出三種系列的超晶格結構，分析光學和溫度蒸氣壓特性顯示了冷卻時間對Ga氧化層的影響。並比較沒有進行冷卻與二十個循環冷卻層和五個循環冷卻層的薄膜進行比較分析。使用X射線繞射(X-ray diffraction, XRD)，低掠角繞射(Grazing Incidence X-ray diffraction, GIXRD)，X射線反射率(X-ray Reflection, XRR)和穿透式電子顯微鏡研究的結構特性研究，使用GenX軟體來進行模擬分析，氧化鋅的薄膜具有與基板具有穩定的渡率和磊晶關係，但是氧化鎵生長厚度隨著層數的增加而變寬。進行TMG冷卻的研究顯示降低了表面粗糙度，並且還改善了與ZnO薄膜的分層和樣品的粗糙度。並在特定的比例發現了 GaO / ZnO的超晶格結構與氧化鎵沿氧化鋅的纖鋅礦晶體結構成長的GaO氧化態薄膜。進行光致螢光（PL）測量以研究製備的薄膜的光學性質。改變氧化鎵層循環比例的層數在3.327eV處，3.405和3.252eV之間的差異接近於ZnO 72meV中LO聲子的特徵能量。

The effects of cooldown Ga oxidation are reported on the structural, optical, and temperature vapor pressure properties of c-plane ZnO thin films grown on c-plane Al2O3 substrates by atomic layer deposition. Films without cooldown, twenty cooldown layer, and five cooldown layers are compared. Structural properties studied using x-ray diffraction, x-ray reflectivity, and transmission electron microscopy show that all the films have a largely similar thickness and epitaxial relations with their substrates, but the Gallium oxide grow thickness broader as the number of increases. However, the extra layer of TMG cooldown reduces the surface roughness drastically and also improves the stratification and flatness of the film of the ZnO films. Superlattices of GaO/ZnO have been grown with alternating layers of GaO conforming to the crystal structure of wurtzite-ZnO. photoluminescence (PL) measurement were conducted to study the optical properties of the prepared films. The number of layers in the process of changing the number of gallium oxide layers is found at 3.327 eV and the difference between 3.405 and 3.252 eV is close to characteristic energy of the LO phonon in ZnO 72 meV .

論文審定書…………………..…………………………………..…………………….. i
論文公開授權書 …………………………………………………………….…….….ii
誌謝 …………………………………………………………………….……………iii
Abstract……………………………………………………………………………….. iv
摘要…………………………………………………………………………………….. v
I. INTRODUCTION…………………………………………………………… 1
II. EXPERIMENTAL SECTION ………………………………………………..3
II-A. Sample growth 3
II-B. Sample characterizations 6
III. RESULTS AND DISCUSSION …….………..7
III-A. XRR and XRD analyses 7
III-B. TEM analysis 12
III-C. Photoluminescence and resistivity analysis 13
IV. CONCLUSIONS……………………………………………………………. 16
V. Appendix……………………………….…………………………………… 22

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