本研究系探討以聚焦離子束技術(FIB)製作之半節距200nm以下之石英玻璃柵型結構模仁於高分子材料上的壓印技術。我們以FIB製作不同深度及寬度之奈米溝槽結構模仁，研究這些模仁對於高分子光阻材料SU-8壓印製程的適當壓力與溫度。為求達到最佳之壓印結果以獲得最佳之壓印參數，因此設計實驗以針對不同壓印之參數進行探討：例如其脫模劑長成方式、壓印溫度、壓印壓力，以及脫模溫度並探討其影響。本研究成功在高分子材料SU-8上壓印出線寬約50nm柵型結構，實驗結果發現在壓印溫度高於Tg30℃且以恆壓方式進行壓印配合於室溫脫模較能得到較佳之壓印結構。AFM的量測顯示hp100nm以上的壓印皆能使材料完全填充溝槽。

This study investigates sub 200nm half-pitch polymer structures by nanoimprint process. The trench structures were fabricated on quartz glass with various depths and widths by FIB. To investigate the best nanoimprint process on SU-8, we studied various parameters such as: imprinting temperature, imprinting pressure, and temperature for de-molding, etc. 　This study had successfully defined 50nm width with different depths on to SU-8 by imprint. 　Imprint temperature above Tg 30℃ with constant pressure on continuous impressing and de-mold in room temperature would result in better imprinting results. The filling rate of this nanoimprint technology was measured by atomic force microscopy. 　For structures above/near 100nm half-pitch, the filling rate is nearly 100%.

目錄
目錄 I
圖目錄 V
表目錄 XI
中文摘要 XII
英文摘要 XIII
第一章緒論 1
1-1 研究背景 1
1-2 研究動機及目的 3
第二章奈米壓印技術 4
2-1 奈米壓印技術發展 5
2-1-1熱壓成形奈米壓印 5
2-1-2紫外光硬化成形奈米壓印 10
2-1-3軟微影技術 12
2-1-4雷射輔助直接壓印技術 14
2-2 壓印高分子材料 19
2-2-1熱塑性高分子材料 19
2-2-2光塑性高分子材料 19
2-3 自組單分子膜 20
第三章實驗儀器與材料及實驗方法和步驟 22
3-1 實驗儀器 22
3-1-1場發射型掃描式電子顯微鏡(JEOL-6330 SEM) 22
3-1-2環境掃描式電子顯微鏡（ESEM） 23
3-1-3原子力顯微鏡實驗機台(Atomic Force Microscopy; AFM) 24
3-1-4超音波清洗機 26
3-1-5全電式自動化壓印機(500K-1) 27
3-2 實驗材料 28
3-2-1模仁材料 28
3-2-2脫模劑 29
3-2-3壓印高分子材料 29
3-3 實驗方法 30
3-4 實驗步驟 31
3-4-1石英玻璃模仁製作 31
3-4-2脫模劑(自組裝抗沾黏劑)長成 37
3-4-3石英玻璃模仁壓印前準備 38
3-4-4高分子光阻塗佈 38
3-4-5軟烤(Soft Bake) 39
3-4-6壓印 40
3-4-7曝光 40
3-4-8曝光後烤(Post Bake) 40
3-4-9脫模 40
3-4-10模仁檢測 41
第四章實驗結果及探討 42
4-1脫模劑長成方式 42
4-1-1浸泡15分鐘方式 42
4-1-2蒸鍍15分鐘方式 43
4-2以壓力評估壓印情況(溫度固定) 44
4-2-1恆壓力進行壓印 44
4-2-2階段壓力進行壓印 47
4-3由壓印溫度探討 48
4-3-1高於Tg溫度15℃ 49
4-3-2高於Tg溫度30℃ 49
4-3-3高於Tg溫度45℃ 50
4-4高分子材料壓印後清洗狀況 52
4-5脫模方式 56
4-5-1壓印後高溫下脫模 56
4-5-2降至室溫下脫模 59
4-6壓印結果 63
第五章結論及未來期許 83
5- 1結論 83
5- 2未來展望 84
參考文獻 86

圖目錄
圖2-1:熱壓成形奈米壓印 6
圖2-2：紫外光硬化成形奈米壓印 11
圖2-3:軟微影技術 14
圖2-4:雷射輔助直接壓印技術 16
圖3-1:JEOL-6330 SEM 22
圖3-2:ESEM 23
圖3-3:DI 3100 AFM外觀 24
圖3-4:AR5-NCH-10探針之SEM [NANOSENSORS] 26
圖3-5:全電式自動化壓印機 500K-1 28
圖3-6:PFOTCS化學式 29
圖3-7:設計規劃之壓印圖案 32
圖3-8:AFM掃描模仁線寬約50nm深度約100nm之3D與輪廓圖 34
圖3-9:AFM掃描模仁線寬約75nm深度約200nm之3D與輪廓圖 34
圖3-10:AFM掃描模仁線寬約100nm深度約300nm之3D與輪廓圖 35
圖3-11:AFM掃描模仁線寬約150nm深度約100nm之3D與輪廓圖 35
圖3-12:AFM掃描模仁線寬約200nm深度約200nm之3D與輪廓圖 35
圖3-13:模仁設定深度與實際線寬之關係 36
圖3-14:模仁實際深度與設定深度之關係 36
圖3-15:模仁上脫模劑後情況 38
圖4-1:脫模劑浸泡式長成方式 42
圖4-2:脫模劑蒸鍍式長成方式 43
圖4-3:恆壓力壓印示意圖 44
圖4-4:恆壓力壓印方式4.5kg/cm²、85℃壓印之圖案 45
圖4-5:恆壓方式5 kg/cm²、85℃，壓力過大造成模仁破壞 46
圖4-6:階段壓力壓印示意圖 47
圖4-7:階段壓力壓印方式壓印之圖案 48
圖4-8:恆壓力4.5kg/cm²、85℃壓印之線寬約200nm 50
圖4-9:恆壓力4.5kg/cm²、85℃壓印之線寬約50nm 50
圖4-10:恆壓力4.5kg/cm²、100℃壓印之線寬約200nm 51
圖4-11:恆壓力4.5kg/cm²、100℃壓印之線寬約50nm 52
圖4-12:OM所照SU-8殘留 53
圖4-13:SEM所照SU-8殘留 53
圖4-14:模仁壓印後於丙酮清洗後光阻殘留物 55
圖4-15:模仁壓印後食人魚蝕刻液清洗後 56
圖4-16:線寬約100nm恆壓力4.5kg/cm²、85℃壓印、85℃脫模 57
圖4-17:線寬約100nm恆壓力4.5kg/cm²、85℃壓印、85℃脫模 58
圖4-18:線寬約50nm恆壓力4.5kg/cm²、85℃壓印、80℃脫模 58
圖4-19:線寬約50nm恆壓力4.5kg/cm²、85℃壓印、80℃脫模 59
圖4-20:線寬約200nm恆壓力4.5kg/cm²、85℃壓印於室溫脫模 60
圖4-21:線寬約200nm恆壓力4.5kg/cm²、85℃壓印於室溫脫模 61
圖4-22:線寬約100nm恆壓力4.5kg/cm²、85℃壓印於室溫脫模 62
圖4-23：壓印後於SEM掃描之眾多氣泡 63
圖4-24:壓印結構線寬262.4nm深度約300nm(寬200nm深300nm) 64
圖4-25:AFM掃描壓印線寬約241.24nm深度約233.69nm之3D與輪廓圖(寬200nm深300nm) 64
圖4-26:壓印結構線寬約204.1nm深度約200nm(寬200nm深200nm) 65
圖4-27:AFM掃描壓印線寬約242.93nm深度約140.78nm之3D與輪廓圖(寬200nm深200nm) 65
圖4-28:壓印結構線寬約230.2nm深度約100nm(寬200nm深100nm) 66
圖4-29:AFM掃描壓印線寬約240.63nm深度約59.872nm之3D與輪廓圖(寬200nm深100nm) 66
圖4-30:壓印結構線寬約160.3nm深度約300nm(寬150nm深300nm) 67
圖4-31:AFM掃描壓印線寬約194.55nm深度約233.51nm之3D與輪廓圖(寬150nm深300nm) 67
圖4-32:壓印結構線寬約192.4nm深度約200nm(寬150nm深200nm) 68
圖4-33:AFM掃描壓印線寬約194.14nm深度約139.65nm之3D與輪廓圖(寬150nm深200nm) 68
圖4-34:壓印結構線寬約186.5nm深度約100nm(寬150nm深100nm) 69
圖4-35:AFM掃描壓印線寬約181.96nm深度約57.65nm之3D與輪廓圖(寬150nm深100nm) 69
圖4-36:壓印結構線寬約108.2nm深度約300nm(寬100nm深300nm) 70
圖4-37:AFM掃描壓印線寬約144.27nm深度約221.82nm之3D與輪廓圖(寬100nm深300nm) 70
圖4-38:壓印結構線寬約125.6nm深度約200nm(寬100nm深200nm) 71
圖4-39:AFM掃描壓印線寬約128.69nm深度約148.02nm之3D與輪廓圖(寬100nm深200nm) 71
圖4-40:壓印結構線寬約125.3nm深度約100nm(寬100nm深100nm) 72
圖4-41:AFM掃描壓印線寬約128.06nm深度約57.797nm之3D與輪廓圖(寬100nm深100nm) 72
圖4-42:壓印結構線寬約105.1nm深度約300nm(寬75nm深300nm) 73
圖4-43:AFM掃描壓印線寬約122.83 nm深度約86.794nm之3D與輪廓圖(寬75nm深300nm) 73
圖4-44:壓印結構線寬約90.4nm深度約200nm(寬75nm深200nm) 74
圖4-45:AFM掃描壓印線寬約125.34nm深度約87.912nm之3D與輪廓圖(寬75nm深200nm) 74
圖4-46:壓印結構線寬約96.3nm深度約100nm(寬75nm深100nm) 75
圖4-47:AFM掃描壓印線寬約120.16nm深度約24.169nm之3D與輪廓圖(寬75nm深100nm) 75
圖4-48:壓印結構線寬約102nm深度約300nm(寬50nm深300nm) 76
圖4-49:AFM掃描壓印線寬約82.397nm深度約27.238nm之3D與輪廓圖(寬50nm深300nm) 76
圖4-50:壓印結構線寬約107.8nm深度約200nm(寬50nm深200nm) 77
圖4-51:AFM掃描壓印線寬約80.414nm深度約27.172nm之3D與輪廓圖(寬50nm深200nm) 77
圖4-52:壓印結構線寬約110.9nm深度約100nm(寬50nm深100nm) 78
圖4-53:AFM掃描壓印線寬約79.041nm深度約17.424nm之3D與輪廓圖(寬50nm深100nm) 78
圖4-54:線寬約50、75、100、150、200nm各深度之光阻填充率，圖中各尺寸第一點預設深度為100nm 、第二點預設深度為200nm、第三點預設為300nm 81
圖4-55：模仁與壓印結構輪廓比對，紅色為模仁黑色為壓印結構(線寬50nm，深度100nm) 81
圖4-56：模仁與壓印結構輪廓比對，紅色為模仁黑色為壓印結構(線寬50nm，深度200nm) 81
圖4-57：模仁與壓印結構輪廓比對，紅色為模仁黑色為壓印結構(線寬50nm，深度300nm) 81
圖4-58：模仁與壓印結構輪廓比對，紅色為模仁黑色為壓印結構(線寬100nm，深度300nm) 82
圖4-59：模仁與壓印結構輪廓比對，紅色為模仁黑色為壓印結構(線寬200nm，深度200nm) 82

表目錄
表2-1:常見自組裝分子及基材 21
表3-1:AFM儀器規格 25
表3-2:AR5-NCH-10之微懸臂規格 26
表3-3:常用光阻之工作參數 30
表3-4:設定之FIB加工之線條與間距寬度(單位:nm) 33
表3-5:FIB加工模仁後於AFM掃描之結構實際線寬與深度 34
表4-1:於AFM量測之模仁和壓印結構各尺寸的實際深度 79

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