體聲波元件具有低損耗、較小的頻率溫度係數、較高的功率承受能力的特點，在高頻通訊系統上為一個相當重要的元件。
本論文採用階梯式與堆疊式晶體濾波器作為體聲波濾波器的主要結構；在室溫下，以壓力3 mTorr，功率175 W沉積白金電極，且以鈦為晶種層，增加白金與SiNx/SiO2/Si基板間的附著力，再利用室溫兩階段法沉積氧化鋅壓電薄膜。
於階梯式濾波器中，當濾波器共振面積由160×150縮小至130×60 μm2，頻帶抑制由5.56增加至6.63 dB，達到較佳的濾波效果；而隨著接地端與訊號端的距離由45增加至90 μm，接地端無法有效保護訊號傳遞，導致濾波器的插入損失從-5.01增加至-11 dB。
堆疊式晶體濾波器呈現多模態的共振現象，以第二諧振為主的共振點具有較高的頻帶抑制值33.6 dB，但頻寬僅6.9 MHz，因此較適合於窄頻濾波器的應用。

Thin Film bulk acoustic wave devices have the advantages of low loss, low temperature coefficient of the resonant frequency, and high power handling. These excellent characteristics are suitable for the applications on high frequency communication systems.
In this study, thin film bulk acoustic wave filters using the ladder-type filter and stacked crystal filter configurations were investigated. Platinum was chosen as the top and bottom electrodes. To improve the platinum adhesion on SiNx/SiO2/Si substrates, a seeding layer of titanium is used. Highly c-axis oriented piezoelectric zinc oxide thin films were deposited by two-step deposition method under room temperature.
As resonant area decreases, the band rejection of ladder-type filter will increase. Because the resonant area decreased, the distance between signal and ground will increase the results in an increased insertion loss. On the other hand, stacked crystal filters have larger band rejection and less 3dB bandwidth, which are suitable for the application of narrow band filters.

目錄 III
圖表目錄 VI
第一章 前言 1
1.1 研究背景 1
1.2 薄膜體聲波濾波器簡介 2
1.3 研究內容 5
第二章 理論分析 7
2.1 壓電模數(Piezoelectric moduli) 7
2.2 壓電理論 9
2.2.1 壓電效應 10
2.2.2 壓電方程式 11
2.2.3 壓電材料 13
2.3 氧化鋅結構與特性 14
2.4 Mason model等效電路分析 15
2.5 薄膜體聲波共振器 17
2.5.1 值 18
2.5.2 Q值 18
2.6 薄膜體聲波濾波器 19
2.6.1 階梯式濾波器 19
2.6.2 堆疊式晶體濾波器 20
第三章 實驗步驟 22
3.1 直流濺鍍系統與薄膜沉積 22
3.2 射頻濺鍍系統與薄膜沉積 22
3.3 薄膜特性分析 23
3.3.1 X光繞射(X-Ray Diffraction, XRD)分析 23
3.3.2 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分析 23
3.3.3 原子力測量顯微鏡(Atomic Force Microscopy, AFM)分析 24
3.4 頻率調變 24
3.5 濾波器製作流程 25
3.5.1 RCA清洗基板 25
3.5.2 SiO2薄膜沉積 26
3.5.3 SiNx薄膜沉積 26
3.5.4 背部蝕刻窗口與底電極的製作 27
3.5.5 壓電層的製作 27
3.5.6 頂電極的製作 27
3.5.7 KOH蝕刻背部空腔 28
3.6元件量測 28
第四章 結果與討論 29
4.1 薄膜材料之物性分析 29
4.1.1 電極 29
4.1.2 壓電層 29
4.2 階梯式濾波器 30
4.2.1 頻帶抑制(Band rejection) 30
4.2.2 插入損失(Insertion loss) 31
4.2.3 3dB頻寬(3dB Bandwidth) 31
4.3 堆疊式晶體濾波器 32
4.3.1 寬頻分析 32
4.3.2 窄頻分析 33
第五章 結論 34
參考文獻 35

圖1-1 體聲波共振器的結構 42
圖1-2　體聲波濾波器的組態：(a)階梯式濾波器, (b)平衡式濾波器, (c)堆疊式晶體濾波器, (d)耦合共振濾波器 44

圖2-1　單位晶胞應力示意圖 45
圖2-2　壓電效應：(a)正壓電效應，(b)逆壓電效應 46
圖2-3　氧化鋅(ZnO)結構 47
圖2-4　體聲波共振器之幾何結構 48
圖2-5　Mason model等效電路模型 48
圖2-6 不同頂電極之模擬圖 49
圖2-7　聲波在高聲波能量反射介面的聲波反射示意圖 49
圖2-8　體聲波共振器之阻抗特性 50
圖2-9　2.5-stage階梯式濾波器 51
圖2-10　1-stage階梯式濾波器電路示意圖 51
圖2-11　階梯式濾波器阻抗與濾波器特性示意圖 52
圖2-12　堆疊式晶體濾波器結構圖 53
圖2-13　堆疊式晶體濾波器之特性 53

圖3-1　直流及射頻磁控濺鍍系統 54
圖3-2　階梯式濾波器之製程流程圖 55
圖3-3　堆疊式晶體濾波器之製程流程圖 56
圖3-4　舉離法 57
圖3-5 白金厚度與頻率漂移關係圖 58
圖3-6 元件完成圖： (a)階梯式濾波器, (b)堆疊式晶體濾波器 59

圖4-1　白金電極之XRD分析圖 59
圖4-2　白金電極之SEM分析圖 59
圖4-3　白金電極之AFM分析圖 60
圖4-4　氧化鋅之XRD分析圖 60
圖4-5　氧化鋅之SEM分析圖： (a)上視圖, (b)剖面圖61
圖4-6　氧化鋅之AFM分析圖 62
圖4-7　四種不同電極圖案 64
圖4-8　S21與頻率關係圖：(a)電極圖形一, (b)電極圖形二, (c)電極圖形三, (d)電極圖形四 66
圖4-9　共振面積與頻帶抑制之關係圖 67
圖4-10　不同共振面積與共振器阻抗關係圖 67
圖4-11　電極間距與插入損失之關係圖 68
圖4-12　四種電極圖形與頻寬之關係圖 68
圖4-13　堆疊式晶體濾波器之頂電極圖案 69
圖4-14　堆疊式晶體濾波器S21與頻率之寬頻關係圖69
圖4-15　堆疊式晶體濾波器S21與頻率之窄頻關係圖70

表一 陶瓷濾波器、表面聲波濾波器、體聲波濾波器比較72
表二 張量表示法與矩陣表示法 73
表三 正逆壓電效應的表示式 73
表四 氧化鋅與氮化鋁特性 74
表五 氧化鋅(ZnO)基本特性表 75
表六 各層薄膜的參數 76
表七 白金為頂電極之共振器模擬參數表77
表八 直流磁控濺鍍法沉積金屬之系統參數80
表九 室溫兩階段沈積氧化鋅之系統參數 78
表十 氧化鋅(ZnO)的JCPDS Data 79
表十一 不同電極圖形與濾波器特性 80
表十二 電極變化之模擬參數 80

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