本論文之研究目的為以c軸傾斜之氮化鋁薄膜製作出剪模態薄膜體聲波共振器(FBAR)，並應用於液態環境之感測。為了研製剪模態薄膜體聲波共振器，本研究以射頻磁控濺鍍法結合離軸成長方式以沉積氮化鋁薄膜，並針對離軸距離及沉積參數之影響進行一系列的探討。薄膜體聲波共振器具有剪模態之原因，是由於氮化鋁薄膜是以c軸傾斜的方式成長。於本研究中，藉由沉積參數的調變，可成長出具有傾斜角15°及23°之氮化鋁薄膜。本研究利用X光繞射儀與掃描式電子顯微鏡對氮化鋁薄膜進行物性分析，以網路分析儀HP8720搭配CASCADE探針座進行FBAR元件頻率響應的量測。藉由頻率響應分析得知，傾斜角度23°氮化鋁薄膜所製作之FBAR具有兩種共振模態，其縱波之共振頻率為2.07 GHz，剪波之共振頻率為1.17 GHz。為了探討FBAR元件之感測特性，本研究進行了質量負載與液態負載實驗。經由實驗數據的計算，得知縱波與剪波之質量感測度分別為2295 Hz cm2/ng與1363 Hz cm2/ng；而縱波與剪波之品質因子分別為588與337。於液態負載時，FBAR元件的縱模態之品質因子從588降低至0；而剪模態之品質因子則保持不變。經由計算得知，縱波之液態感測度為0；剪波之液態感測度為17.88 Hz cm2/μg。

Shear-mode thin film bulk acoustic resonator (TFBAR) devices with c-axis tilted AlN films are fabricated for the application of liquid sensors. To fabricate shear-mode TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric AlN thin films is adopted and influences of the relative distance and the sputtering parameters are investigated. The shrar-mode phenomenon of a TFBAR results from the tilted crystalline orientation of AlN thin films. In this thesis, the AlN thin films are deposited with tilting angles of 15° and 23°, set by controlling the deposition parameters. The properties of the AlN thin films are investigated by X-ray diffraction and scanning electron microscopy. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station. The frequency response of the TFBAR device with 23° tilted AlN thin film is measured to reveal its ability to provide shear-mode resonance. The resonance frequencies of the longitudinal and shear modes are 2.07 GHz and 1.17 GHz, respectively. To investigate the sensing characteristics of TFBAR, two basic experiments of mass and liquid loading are carried out. The sensitivities of the longitudinal and shear modes to mass loading are calculated to be 2295 Hz cm2/ng and 1363 Hz cm2/ng with the mechanical quality factors of 588 and 337, respectively. However, the mechanical quality factors of the longitudinal mode of TFBAR without and with a liquid loading decreased from 588 to 0, whereas those remain almost the same for the shear mode under liquid loading. The sensitivities of the longitudinal and shear modes are calculated to be 0 and 17.88 Hz cm2/μg for liquid loading.

目錄
摘要 i
目錄 iii
圖表目錄 vii
第一章 前言 1
1.1. 簡介 1
1.2. 薄膜體聲波共振器 1
1.3. 研究內容 4
第二章 理論分析 7
2.1. 氮化鋁(Aluminum nitride , AlN)結構與特性 7
2.2. 壓電理論 10
2.3. 反應式磁控濺鍍 12
2.3.1. 輝光放電 12
2.3.2. 磁控濺射 13
2.3.3. 射頻濺射 15
2.3.4. 反應式濺射 15
2.4. 薄膜沉積機制 16
2.5. 薄膜分析 18
2.5.1. X-ray繞射分析 18
2.5.2. 掃描式電子顯微鏡分析 19
2.5.3. 原子力顯微鏡分析 19
2.6. 矽蝕刻製程 20
2.6.1. 非等向性濕式蝕刻 20
2.6.2. 乾式蝕刻 22
2.7. FBAR結構與原理 24
2.8. 體聲波傳遞模式 24
2.9. 傾斜式氮化鋁薄膜之研究 25
2.10. FBAR參數性質 26
2.10.1. 機電耦合係數kt2 26
2.10.2. 品質因子(Quality factor, Q) 26
2.11. Mason 等效電路模型 27
2.12. 質量感測度 29
2.13. 電漿修飾 30
2.13.1. 電漿活化 31
2.13.2. 電漿聚合 31
2.13.3. 電漿誘導接枝共聚合 32
2.14. 接觸角 32
2.15. 自我組裝單分子膜技術(SAMs) 33
2.15.1. 成膜系統 34
2.15.2. 基本結構 34
2.16. 酵素連結免疫吸附法(ELISA) 35
2.16.1. 直接型酵素連結免疫吸附法(Direct ELISA) 36
2.16.2. 間接型酵素連結免疫吸附法(Indirect ELISA) 36
2.16.3. 三明治型酵素連結免疫吸附法(Sandwich ELISA) 36
第三章 實驗 38
3.1. 實驗流程 38
3.2. 基板清洗 40
3.3. 直流濺鍍系統與薄膜沉積 41
3.4. 射頻濺鍍系統 42
3.5. 黃光製程 46
3.6. 蝕刻製程 46
3.7. 薄膜特性分析 47
3.7.1. X光繞射(X-Ray Diffraction, XRD)分析 47
3.7.2. 掃描式電子顯微鏡(SEM) 49
3.7.3. 原子力顯微鏡(AFM) 50
3.8. FBAR之製作 51
3.8.1. SiNx薄膜沉積 51
3.8.2. 背部蝕刻窗口及底電極之製作 52
3.8.3. 壓電層之製作 54
3.8.4. 頂電極之製作 54
3.8.5. KOH蝕刻背部空腔 55
3.9. 元件之設定參數 55
3.10. 元件電性量測 55
3.11. 質量感測 55
3.11.1. 鈦(Ti)薄膜之沉積率 56
3.11.2. 元件頻率響應 56
3.12. 液態感測 56
3.12.1. 生醫附著層 56
3.12.2. 氧電漿清洗與接觸角量測 57
3.12.3. 元件頻率響應 58
3.13. 生醫感測 58
3.13.1. 自我組裝單分子膜技術(SAMs) 59
3.13.2. 實驗藥品 60
3.13.3. 酵素連結免疫吸附法(ELISA)呈色分析 64
3.13.4. FBAR生醫感測器 65
第四章 結果與討論 66
4.1. 氮化鋁壓電層之探討 66
4.1.1. 離軸距離 68
4.1.2. 濺鍍壓力 70
4.1.3. FBAR之頻率響應 73
4.2. 質量感測 79
4.2.1. 金屬膜Ti之沉積率 79
4.2.2. 縱波感測度 81
4.2.3. 剪波感測度 82
4.3. 液態感測 84
4.3.1. Au/Cr生醫附著層 84
4.3.2. 接觸角量測 85
4.3.3. 頻率響應 86
4.4. 生醫感測 88
4.4.1. ELISA呈色分析 88
4.4.2. 頻率響應 89
第五章 結論 93
參考文獻 94

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