本論文採用反應式射頻磁控濺鍍法，在Si基板上製作1/2 λ模態的固態堆疊體聲波(Solid Mounted Resonator, SMR)濾波器元件，並使用熱退火製程改善SMR濾波器的插入損耗(Insertion Loss, IL)。
SMR的布拉格反射器是以高與低聲阻抗材料交互堆疊組成，本研究所使用低聲阻抗材料為SiO2，高聲阻抗材料為W；金屬W藉由濺鍍參數的調變，可得到三種不同結晶型態的薄膜，其中又以α - phase W擁有較高的聲阻抗值，適合作為高聲阻抗層的材料。
本實驗藉由兩階段濺鍍技術沉積ZnO薄膜作為SMR濾波器元件的壓電層，並討論基板溫度與ZnO薄膜的關係。當基板溫度於200 ℃時，ZnO薄膜具有較佳的薄膜物性，適合用以製作SMR元件。
SMR濾波器元件經由CTA、RTA及RTA通氧環境的熱退火處理後，皆可改善SMR濾波器的頻率響應及ZnO薄膜特性，且都於退火溫度400 ℃可獲得最強的薄膜X-ray繞射強度、最低的薄膜表面粗糙度及趨近於1:1的Zn:O值；另外，頻率響應的改善效果以RTA通氧的環境最為顯著，插入損耗可由-12.03 dB提升至-6.96 dB。此外，SMR濾波器的中心頻率經由熱退火處理後會往高頻漂移，推測是因為ZnO壓電薄膜特性的改善使其聲波速度(υ)增加，進而提高了SMR濾波器之中心頻率。

In this study, 1/2 λ mode SMR filters on Si substrates by reactive RF magnetron sputtering method were fabricated. In addition, the thermal annealing process was adopted to improve the insertion loss of SMR filter.
The Bragg reflector in SMR is alternately mounted by high and low acoustic impedance materials, with low acoustic impedance material of SiO2 and high acoustic impedance material of W. We could obtained three kinds of crystal structures of W, α - phase W、β - phase W and α & β - mixed phase W, respectively, it could be obtained by modulating the sputtering recipe. α - phase W possesses higher acoustic impedance and is suitable for high acoustic impedance material in bragg reflector.
The piezoelectric layer of ZnO is sputtered by a 2-step deposition method on Si substrates with different temperature. The ZnO film with stronger C-axis (002) orientation and lower surface roughness value could be obtained at substrate temperature of 200 ℃, which is suitable for fabricating SMR device.
After the SMR filter had completed, the device is thermal annealed with CTA、RTA and RTA in O2 ambient. After thermal treatment, the properties of filters are improved. The properties could be optimized with RTA in O2 ambient condition. The insertion loss was improved from -12.03 dB to -6.96 dB. The film characteristics of ZnO changes after the SMR processed thermal treatment. The strongest C-axis (002) intensity with the lowest surface roughness value at 400 ℃ annealing temperature could be obtained, in that, approximate equal Zn:O ratio could be achieved by XPS examination.
The central frequency of SMR filter drifted to higher value as the temperature of thermal treatment increased, which is attributed to the changes of the ZnO acoustic velocity(υ) after thermal treatment.

摘要 i
Abstract ii
目錄 iii
圖目錄 vi
表目錄 ix
第一章 前言 10
1.1 研究背景動機 10
1.2 研究內容 12
第二章 理論分析 13
2.1 壓電現象 13
2.1.1 壓電效應 13
2.2 聲波的運動方程式 14
2.3 SMR 理論分析 16
2.3.1 布拉格反射器 17
2.3.2 傳輸線方程式 17
2.3.3 1/2 λ mode SMR 19
2.4 薄膜體聲波濾波器 19
2.5 薄膜特性分析 20
2.5.1 氧化鋅 20
2.5.2 鎢 21
2.5.3 二氧化矽 21
2.6 反應式磁控濺鍍 22
2.6.1 輝光放電 22
2.6.2 磁控濺射 23
2.6.3 射頻濺射 23
2.6.4 反應式濺射 24
2.7 薄膜沉積原理 24
2.8 薄膜分析 26
2.8.1 X-ray繞射分析 26
2.8.2 掃描電子顯微鏡分析 26
2.8.3 原子間力顯微鏡分析 27
2.8.4 四點探針片電阻分析 27
2.8.5 X-ray電子能譜分析 28
第三章 實驗 29
3.1 實驗流程 29
3.2 基板清洗 29
3.3 直流與交流濺鍍系統與薄膜沈積 30
3.4 射頻濺鍍系統與薄膜沉積 31
3.5 黃光微影製程 31
3.6 SMR製作流程 32
3.7 薄膜特性分析 33
3.7.1 X-ray 繞射分析 33
3.7.2 掃描電子顯微鏡分析 33
3.7.3 原子間力顯微鏡分析 33
3.7.4 四點探針片電阻分析 34
3.7.5 X-ray電子能譜分析 34
3.7.6 SMR元件電性量測 34
3.7.7 CTA 34
3.7.8 RTA 35
第四章 結果與討論 36
4.1 氧化鋅薄膜特性分析 36
4.2 鎢薄膜特性分析 37
4.2.1 α - phase W 38
4.2.2 β - phase W 38
4.2.3 α & β -mixed phase W 38
4.3 布拉格反射器 39
4.4 SMR濾波器訊號分析及熱退火 40
4.4.1 CTA 40
4.4.2 RTA 41
4.4.3 RTA in O2 ambient 41
4.4.4 電極片電阻 42
4.4.5 剪波模式SMR濾波器 43
4.4.6 頻率漂移 43
4.5 XPS 定量分析 44
4.5.1 XPS Zn 2p3/2 45
4.5.2 XPS O 1s 45
第五章 結論 47
參考文獻 50

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