本論文以薄膜積體濾波器中的介電層為目標，希望在相同的電容值與介電層厚度下，藉由介電常數的提升來降低積體濾波器元件的面積。
研究使用射頻磁控濺鍍法來濺射BaNd2Ti5O14陶瓷靶材以製作MIM薄膜電容之介電層，電極選用鉑金屬，而以氧化鋁為乘載基板。研究進行以得到最佳化之介電薄膜為目的，探討濺鍍製程與薄膜成長後的熱處理參數對介電薄膜性質之影響，並以田口實驗設計之手法找出最佳之濺鍍參數。探討重點以薄膜電容之電性為主。
在研究所安排的參數範圍內，以濺鍍功率100W，無退火處理，沉積溫度400℃，腔體壓力10mtorr所形成之介電層表現的電性最佳。其介電常數在1MHz時為39.2；散逸因子在10kHz時為1.38％；漏電流密度在外加電壓5V時為2.61X10-7A/cm2；崩潰電場強度為0.29MV/cm。介電薄膜經XRD繞射圖分析的結果為非晶態，表面粗糙度由AFM量得為0.236nm。

The motivation of this study is based on integrated passive filter dielectric thin films with thin layers. Reducing the area of integrated passive filter in a circuit by enhancing dielectric constant with same capacitance and thickness is the purpose which has been expected.
To fabricate the thin film MIM structure capacitors, RF magnetron sputtering method was selected and BaNd2Ti5O14 composed materials treated as the target to grow the thin film dielectric layer in MIM structure capacitors. In this study the MIM structure capacitors were deposited on alumina substrates with Pt electrodes. In the thin film experiments, various operation parameters of sputtering deposition and post thermal process at different temperature were used to perform the desired thin film dielectric layers. In order to obtain the optimal performance of the dielectric thin films, “Taguchi Method” was used as a experimental tool. The primary investigation focused on the electric characteristics of the thin film capacitors in this article.
In the arranged ranges of the parameters, the optimal dielectric thin films were deposited under RF power 100W with deposition temperatures at 400℃, chamber pressure is 10mtorr. The dielectric constant of deposited thin films is 39.2 at 1MHz, the dissipation factor is 1.38％ at 10kHz, leakage current is 2.61X10-7A/cm2 at 5V operating voltage and breakdown electric field of 0.29MV/cm is observed. The crystalline structures of deposited thin films were characterized by XRD and found amorphous structure. Film roughness was measured by Atomic Force Microscope (AFM) with 0.263 nm.

摘要 I
ABSTRACT II
目錄 III
圖目錄 V
表目錄 VII
第１章 前言 1
1.1 研究背景與動機 1
1.2 研究內容 3
第２章 基本理論 5
2.1 BaNd2Ti5O14材料 5
2.2 介電理論 7
2.2.1 極化 7
2.2.2 介電損失 12
2.2.3 漏電流與介電崩潰 13
2.3 薄膜沉積與熱處理 14
2.3.1 濺鍍 14
2.3.2 薄膜成長原理 16
2.3.3 熱退火 17
2.4 田口式直交表實驗法 18
2.4.1 實驗設計法 18
2.4.2 田口式直交表實驗法 22
第３章 實驗 24
3.1 實驗流程 24
3.2 靶材製作 25
3.3 以田口式直交表實驗法製作MIM結構薄膜電容 27
3.4 實驗量測及熱處理儀器 30
3.4.1 掃描式電子顯微鏡 30
3.4.2 LCR量測儀及I-V量測儀器 31
3.4.3 原子力顯微鏡 32
3.4.4 X光繞射 32
3.4.5 快速熱退火 33
第４章 數據分析與討論 34
4.1 田口實驗結果數據分析與確認 34
4.2 電容特性討論 37
第５章 結論 41
參考文獻 43

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