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論文名稱 Title |
可撓式 CuInSe2薄膜太陽能電池之研製 Fabrication of Flexible Thin Film CuInSe2 Solar Cell |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
107 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2008-07-24 |
繳交日期 Date of Submission |
2008-08-19 |
關鍵字 Keywords |
可撓、薄膜、太陽能 flexible, thin film, solar cell, CIS, CuInSe2 |
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統計 Statistics |
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中文摘要 |
本論文利用光輔助蒸鍍的方式,在350℃低溫下成長CuInSe2薄膜,製作以PI(Polyimide)為基板之可撓式太陽能電池,並以拉曼光譜分析低溫成長之CuInSe2薄膜,與研究濺鍍Mo於PI基板之性質與PI/Mo/CIS之接觸電性。 Mo薄膜內應力在2~12 mtorr氬氣壓力下,薄膜附著力佳。並且氬氣壓力小、濺鍍功率大呈現較佳薄膜電性。最低之Mo薄膜片電阻為1.95 Ω/□。Mo/CIS在350℃以下皆呈歐姆接觸,400℃則因基板變形而非歐姆接觸。 拉曼光譜分析,光輔助之CuInSe2薄膜呈現較強且較窄的A1訊號,顯示其結構排列較佳,而兩步驟蒸鍍製程可以進一步將訊號之背景消除,並且減弱Cu2Se相訊號。A1訊號有不對稱寬化之現象,其原因來自於CA結構之存在造成額外振動模式,與A1訊號相疊合。 元件製作上,以SLG/Mo/CIS/CdS/ZnO:Al/Al為結構之電池元件,開路電壓Voc為0.320 V,短路電流Isc為3.61 mA,電池填充因子FF為49.8 %。以PI為基板之可撓電池元件在AM 1.5下,開路電壓Voc為0.318 V,短路電流Isc.為2.71 mA,填充因子為39.0 %。 |
Abstract |
In this research, CuInSe2 thin film is grown at 350℃ low temperature by photo-assisted co-evaporation system to fabricate PI (polyimide) substrate flexible thin film solar cells. The low temperature growing CuInSe2 is analyzed by raman spectroscopy. Besides, sputtering Mo thin film on PI and CIS/Mo/PI contact properties are also researched for device fabrication. By studying the Ar pressure and Mo internal stress relationship during the deposition, the Mo layer has been fabricated with both low resistivity and good adhesion. The sheet resistance of Mo layer is 1.95 Ω/□ and shows ohmic contact with CuInSe2 at temperature below 350℃. Raman spectroscopy shows that photo-assisted CuInSe2 has stronger and thinner A1 peak than which without light. Two-stage growing can help eliminating Cu2Se and background signals further. CA structure vibration modes are involved in the asymmetric A1 peak broadening. The SLG/Mo/CIS/CdS/ZnO:Al/Al structured device has open voltage, Voc = 0.320 V, short cut current, Isc = 3.61 mA, and solar cell fill factor, FF = 49.8 %. On the other hand, PI/Mo/CIS/CdS/ZnO:Al/Al structured device has open voltage, Voc = 0.318 V, short cut current, Isc = 2.71 mA, and solar cell fill factor, FF = 39.0 %。 |
目次 Table of Contents |
第一章 簡介 1 1-1 前言 1 1-2 CuInSe2複晶薄膜性質 3 1-3 太陽能電池效率 8 1-4 CuInSe2薄膜太陽能電池結構 11 1-4-1 基板 11 1-4-2 Mo背電極 15 1-4-3 CuInSe2主吸收層 16 1-4-4 CdS緩衝層 16 1-4-5 ZnO:Al透光層 17 1-4-6 Al金屬電極 18 第二章 文獻回顧 19 2-1可撓式CuInSe2薄膜太陽能電池發展 19 2-2 低溫成長CuInSe2複晶薄膜之挑戰 21 2-3光子束輔助低溫蒸鍍法 24 2-4 研究動機與目的 25 第三章 實驗與分析儀器 26 3-1 光輔助共蒸鍍系統 26 3-2 濺鍍系統 30 3-3 薄膜性質分析儀器 31 3-3-1熱探針量測 31 3-3-2四點探針量測 32 3-3-3電流-電壓特性曲線量測 33 3-3-4 X-ray繞射儀 34 3-3-5 α-step膜厚計 34 3-3-6吸收光譜儀 34 3-3-7反射光譜儀 35 3-3-8掃描式電子顯微鏡SEM 35 3-3-9 拉曼光譜儀 36 第四章 實驗步驟 37 4-1實驗與元件製作之流程 37 4-2各層結構製備 39 4-2-1基板準備 39 4-2-2 Mo背電極成長 39 4-2-3 CuInSe2複晶薄膜之成長 40 4-2-4 CdS緩衝層之成長 41 4-2-5 ZnO:Al透光層之濺鍍 41 4-2-6 濺鍍Al正面電極 42 第五章 實驗結果與討論 43 5-1 濺鍍Mo薄膜 43 5-1-1 濺鍍氣體壓力對PI上鍍製Mo薄膜片電阻之影響 44 5-1-2 濺鍍功率對於PI上鍍製Mo薄膜之影響 45 5-2 蒸鍍CuInSe2薄膜 47 5-2-1 低溫成長CuInSe2之X-ray Diffraction分析 47 5-2-2低溫成長CuInSe2之電性量測與Cu2Se二次相 51 5-2-3 Mo/CuInSe2之接觸電性 56 5-3低溫成長CuInSe2之拉曼光譜分析 60 5-3-1 光輔助對於CuInSe2拉曼光譜之影響 62 5-3-2 基板溫度對於CuInSe2拉曼光譜之影響 66 5-3-3 以兩步驟蒸鍍CuInSe2之拉曼光譜分析 69 5-3-4 拉曼訊號寬化與CA結構 71 5-4 緩衝層CdS與透光層ZnO:Al之鍍製 75 5-5 元件製作與量測 78 5-5-1 鈉玻璃基板電池元件 78 5-5-2 可撓式電池元件 80 第六章 結論 88 第七章 參考文獻 90 |
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