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博碩士論文 etd-0822105-172930 詳細資訊
Title page for etd-0822105-172930
論文名稱
Title
電漿輔助分子束磊晶成長之矽摻雜氮化銦光致螢光之研究
Photoluminescence on Si-Doped PAMBE Grown InN
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
73
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2005-07-22
繳交日期
Date of Submission
2005-08-22
關鍵字
Keywords
氮化銦、拉曼、分子束磊晶、霍爾、光致螢光、藍寶石基板、矽摻雜
sapphire, molecular beam epitaxy, Raman, InN, Hall, Photoluminescence, Si doped, MBE
統計
Statistics
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中文摘要
本文將討論以分子束磊晶(Molecular beam epitaxy)在藍寶石基板上成長矽摻雜的氮化銦薄膜。利用不同溫度的矽分子束源來控制矽在氮化銦薄膜內的摻雜濃度,經由van der Pauw霍爾量測法得知樣品內載子濃度及載子遷移率。隨載子濃度增加,載子遷移率降低。載子濃度隨矽分子束源溫度升高,從6.16x1018 cm-3 升高到 1.19x1020 cm-3。隨著載子濃度的增加,光致螢光的峰位置有藍移的現象,強度也跟著變弱,但峰的半高寬變胖。載子濃度1.19x1020 cm-3氮化銦薄膜光致螢光的峰分成兩部分,分別是0.74 eV 與 0.89 eV。在拉曼光譜方面,拉曼不同模態的峰位置與峰的半高寬不會隨矽摻雜濃度的增加而改變。在變溫光致螢光光譜中發現,隨著載子濃度的增加,光譜與溫度的相關性變低。在變激發雷射強度光致螢光光譜中,隨著激發雷射強度的增加,載子濃度6.16x1018 cm-3 與 8.50x1018 cm-3氮化銦薄膜的光致螢光的峰位置有藍移的現象,但載子濃度1.43x1019 cm-3 與2.27x1019 cm-3氮化銦薄膜的光致螢光的峰位置卻沒有明顯移動。在激發雷射強度對光致螢光強度的圖中發現,每個樣品的fitting 值之斜率除了1.43x1019 cm-3氮化銦薄膜之外,它們的斜率皆小於一。
Abstract
In this thesis, we study a series of Si doped InN films. These samples are grown on sapphire (0001) by molecular beam epitaxy (MBE). We have doped Si in InN films successfully. In this experiment, we control Si cell temperature to change carrier concentration of samples during InN film growth. The carrier concentration and mobility are explored by van der Pauw Hall measurement. As carrier concentration increases, mobility decreases. Carrier concentration changes with Si cell temperature from 6.16x1018 cm-3 to 1.19x1020 cm-3. Photoluminescence (PL) emission peak energy shows blue shift when carrier concentration increases, but the intensity decreases and full width at half maximum (FWHM) broadens. The PL peak of InN film with 1.19x1020 cm-3 split into two peaks 0.74 eV and 0.89 eV. In Raman spectra, Raman modes position and FWHM do not change with carrier concentration. In temperature dependence PL, the dependence of PL spectra shows decrease when carrier concentration increases. In power dependence PL, the PL emission peak energy of InN films with 6.16x1018 cm-3 and 8.50x1018 cm-3 show blue shift, while the PL peaks of InN films with 1.43x1019 cm-3 and 2.27x1019 cm-3 show no significant move. The fitting of power density vs. intensity is linear for all samples, but all slope of them are less than 1 expect for InN film with 1.43x1019 cm-3.
目次 Table of Contents
Chapter 1 Introduction……………………………………………………1

Chapter 2 MBE and sample preparation

2.1 Molecular Beam Epitaxy (MBE)……………………………………2

2.2 Sample preparation…………………………………………………2

2.3 Growth procedure……………………………………………………2

2.4 Growth parameter……………………………………………………3

Chapter 3 Theory

3.1 Reflection high-energy electron diffraction (RHEED)………………8

3.2 Photoluminescence (PL)……………………………………………8

3.3 Temperature dependence photoluminescence……………………8

3.4 Scanning electron microscope (SEM)……………………………9

3.5 X-ray diffraction……………………………………………………10

3.6 Raman……………………………………………………………11

3.7 Van der Pauw Hall measurement……………………………………11

Chapter 4 Experiment

4.1 Scanning electron microscope (SEM)………………………………25

4.2 Van der Pauw Hall measurment……………………………………25

4.3 High-resolution X-ray diffraction (HR-XRD)……………………25

4.4 Reflection high-energy electron diffraction (RHEED)……………26

4.5 Raman………………………………………………………………26

4.6 Room temperature photoluminescence and low temperature photoluminescence (RT-PL and LT-PL)………………………………26

4.7 Temperature dependent photoluminescence………………………27

4.8 Power dependence photoluminescence (@69K)…………………29

Chapter 5 Conclusion

Reference………………………………………………………………51

Appendix A Efficiency of grating, response curve of detector and PL experiment setup………………………………………………………52

Appendix B Making nanoLED………………………………………54
參考文獻 References
1. Davydov, V.Y., Klochikhin, A.A., Seisyan, R.P., Phys. Stat. Solidi (b), 2002. R1: p. 229.
2. Wu J, W.W., Superlattices and Microstructures, 2003. 34: p. 63.
3. J. Cui , A.S., M. Reshichkov , F. Yun , A. Baski and H. Morkoc MRS Internet J. Nitride Semicond, 2000. 5(7).
4. N.Grandjean , J.M.a.M.L., Applied Physics Letter, 1996. 69(2071).
5. Ichimiya A, C.P., Reflection high-energy electron diffraction. 2004: Cambridge.
6. Pankove, J.I., Optical process in semiconductor: Dover Publication, Inc.
7. 方容川, 固體光譜學. 2001, 合肥: 中國科學技術大學出版社.
8. 汪健民, 材料分析. 1998: 中國材料學學會.
9. Cullity BD, S.S., Elements of X-ray diffraction. 3 ed: Prentice Hall.
10. Kittel, C., Introduction to Solid State Physics. 7 ed. 1996: John Wiley & Sons.
11. Sze, S., Semiconductor devices physics and technology. 1985: John Wiley & Sons.
12. Shubina TV, I.S., Jmerik VN, PHYSICAL REVIEW LETTERS, 2004. 92(11): p. 117407.
13. Inushima T, H.M., Matsui T, Physical review B, 2003. 68: p. 235204.
14. Higashiwaki M, M.T., Journal of Crystal Growth, 2004. 269: p. 162.
15. Wu J, W.W., Journal of Applied Physics, 2003. 94(7): p. 4457.
16. Morkoc, H., Nitride Semiconductor and devices. 1998: Springer.
17. Chen Fei, C.A., Lu Hai, Physica E, 2004. 20: p. 308.
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