在這篇論文中，我們將試著成長m面氮化銦鎵藍光發光二極體，並探討其特性。首先，利用電漿輔助分子束磊晶在m面藍寶石基板上，成長m面氮化鎵薄膜。在成長的過程中，Ⅴ/Ⅲ比與成長溫度是最重要的因素，藉由改變這兩種參數，可以成長出較好的薄膜品質。
而在成長藍光發光二極體中，銦在氮化銦鎵中的含量也相當重要，銦與鎵的比例會影響能隙大小與發光波長，所以在調整成長參數，必須兼顧薄膜品質與發光波長。
薄膜之結構特性是使用X光繞射儀觀測，結果顯示氮化鎵是沿著m面成長。由陰極發光光譜圖，可知氮化銦鎵之發光波長位於藍光波段內。
M面氮化銦鎵藍光發光二極體，以X光繞射光譜儀及電子背向散射繞射分析晶向。並量測其不同電流下之電致螢光光譜及偏極化的電致螢光光譜。以及電流電壓特性，輸入電流與輸出功率之關係。

In this thesis, we will try to grow m-plane InGaN blue light-emitting diodes (LEDs) and discuss the characteristics. First, pure m-plane GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) had been achieved. Ⅴ/Ⅲ ratio and the growth temperature are the most important factors in the growth sequence. M-GaN film with better crystal quality was grown successfully by tuning these two factors.
Indium composition in the InGaN layer is an important issue in the growth of blue LEDs; In/Ga ratio could affect the bandgap i.e. the target wavelength of a LED. We have to regard the crystal quality and the target wavelength of the InGaN layer in growth procedure.
Structural properties were investigated by X-ray diffraction (XRD). XRD measurements showed that the crystal orientation of GaN films was pure m-plane. From cathodoluminescence (CL) spectra, the luminescence wavelength of InGaN layer is in the blue-light range.
The crysatalline of m-plane InGaN blue LEDs were analyzed by XRD and Electron Back-Scattered Diffraction (EBSD). Electroluminescence (EL) was measured under the different inject current conditions; the polarization of EL was also measured. Moreover, the current-voltage curve and current-output curve were carried out.

圖目錄 ....................................................................................................... III
表目錄 ...................................................................................................... VI
摘要 ......................................................................................................... VII
Abstract .................................................................................................. VIII
第一章 序論............................................................................................... 1
1.1 文獻回顧 .......................................................................................... 1
1.2 非極性面發光二極之優勢 .............................................................. 4
1.3 目前成長m面GaN之進展 ........................................................... 9
第二章 儀器介紹 .................................................................................... 11
2.1 分子束磊晶Plasma assisted molecular beam epitaxy (PA-MBE) 11
2.2 掃描式電子顯微鏡Scanning Electron Microscopy (SEM) ......... 16
2.3 激發冷光Luminescence ................................................................ 18
2.3.1 光致螢光Photoluminescence(PL)........................................... 19
2.3.2 陰極發光Cathodoluminescence(CL) ...................................... 19
2.4 X光繞射儀 X-ray Diffraction(XRD) ............................................ 21
第三章 m-GaN與InGaN薄膜成長 ...................................................... 23
II
3.1 成長前之基板處理 ........................................................................ 23
3.2 M面GaN薄膜之成長 ................................................................... 25
3.2.1 掃描式電子顯微鏡 .................................................................. 26
3.2.2 X光繞射儀 ............................................................................... 30
3.3 M面InGaN薄膜之成長 ............................................................... 33
第四章 發光二極體之量測與分析 ........................................................ 43
4.1 M面發光二極體之量測與分析 ..................................................... 43
4.2 C面發光二極體之量測與分析 ..................................................... 52
第五章 結論............................................................................................. 57
參考文獻 ................................................................................................... 58

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