一般移除矽晶圓層的方式是使用氫氟酸和氫氧化鉀等化學物品進行蝕刻加工，但這些化學藥品對人體具有危險性。因此，本研究提出使用鑽石磨盤去減少矽晶圓的厚度的方法，希望能有效縮短化學加工時間並且降低化學污染量。
在本研究中，首先探討加工壓力、晶圓轉速以及磨盤轉速等加工參數對矽晶圓移除速率的影響。接著，探討加工壓力的大小對於晶圓表面平坦度的影響。最後，由理論分析晶圓和磨盤兩者的轉速比對研磨表面的研磨軌跡型態之影響。
由實驗結果得知，加工壓力、晶圓轉速以及磨盤轉速皆與矽晶圓移除速率幾乎成線性關係。當加工壓力減少時，晶圓表面就會越平坦。
另外可從理論模擬的結果得知，晶圓轉速和磨盤轉速兩者的轉速比會影響晶圓表面上的研磨軌跡型態。當轉速比為無理數時，研磨軌跡的分佈較緻密。

The usual way to remove the silicon layer is used by the solutions of HF and KOH to conduct the etching process, but those chemicals are dangerous for the humans. Therefore, this study proposes the method that uses the diamond millstone to reduce the thickness of the silicon wafer. It hopes that this method can effectively shorten the process time and reduce the amount of chemical pollution.
Firstly, the effects of the working pressure, the rotating speed of the wafer, and the diamond millstone on the removing rate of silicon wafer are investigated. Then, the effect of the working pressure on the flatness of the wafer surface is investigated. Finally, the effect of the rotating speed ratio of the wafer to the diamond millstone on the track type of grinding surface is theoretically analyzed.
According to the experimental results, the removing rate of silicon wafer is almost linearly proportional to the working pressure, the rotating speed of the wafer, and the diamond millstone. The lighter working pressure, the more flatness of the wafer is.
According to the theoretical results, the rotating speed ratio of the wafer to the diamond millstone influences the track type of grinding surface. When this rotating speed ratio is an irrational number, the distribution of grinding track becomes finer.

總目錄..................................................i
圖目錄.................................................iv
表目錄...............................................viii
論文摘要(中文).........................................ix
論文摘要(英文)..........................................x
第一章 緒論
1-1 前言...............................................1
1-2 研究動機...........................................2
1-3 文獻回顧...........................................4
1-4 本文重點及論文架構......................,,.........8

第二章 理論基礎
2-1 電鍍 ...............................................9
2-1-1 電鍍液成分介紹1...............................11
2-1-2 電解質離子在鍍液中之三種移動方式..............13
2-1-3 電鍍的結晶過程................................14
2-2 複合電鍍
2-2-1 複合電鍍的形成機制............................15
2-2-2 影響析鍍的原因................................18
2-3 單晶矽的結構特性..................................20
2-4 單晶矽的化學水合反應..............................22

第三章 實驗流程規劃及實驗設備介紹
3-1 實驗流程規劃......................................24
3-2 實驗機台介紹......................................26
3-2-1 複合電鍍系統..................................27
3-2-2 循環攪拌系統..................................28
3-2-3 研磨加工系統..................................29
3-3 試片介紹及前處裡方式..............................30
3-3-1 磨盤..........................................30
3-3-2 矽晶圓........................................33
3-4 實驗步驟..........................................35
3-4-1 電鍍磨盤實驗..................................35
3-4-2 晶圓研磨加工實驗..............................36

第四章 實驗結果與討論
4-1 實驗結果與討論....................................38
4-1-1磨盤轉速和施加壓力及晶圓轉速對矽移除速率的影響..43
4-1-2 施加壓力對矽晶圓加工面平面度的影響.............45
4-1-3 各參數的研磨成果的比較........................53
4-1-4 研磨後的矽碎片SEM的觀察.......................55
4-2 研磨軌跡之探討....................................56
4-2-1　超精密研磨加工機加工型式......................56
4-2-2　單一研磨點之研磨軌跡方程式....................58
4-2-3 單一研磨點之研磨軌跡型態分析..................58
第五章 結論...........................................71
參考文獻...............................................73

[1] 宋健民,“鑽石合成”,全華科技圖書股份有限公司, 2000
[2] 陳泰甲，“同時複合電鍍磨盤之鑽石磨磨削特性研究”，中山大學機械與機電工程研究所碩士論文,2005
[3] 姚昶劦,“連續複合電鍍磨盤式超精密拋光機之研發及矽晶圓拋光特性”,中山大學機械與機電工程研究所碩士論文,2002.
[4] 黃韋翰,“新式超精密拋光機之矽晶圓拋光特性研究”,中山大學機械與機電工程研究所碩士論文,2003.
[5] 楊勝旭,“連續複合電鍍拋光機加工條件對矽晶圓拋光機制之影響”,中山大學機械與機電工程研究所碩士論文,2004.
[6] J.E. Field, “The properties of diamond”,Academic Press, London,1979
[7] 劉丙寅，謝丞聿，張延瑜，吳志宏，程智勇，丁家仁，“無基材超平坦鑽石膜製程技術與發展應用”，機械工業雜誌257期pp.111~120。
[8] 蕭宏“半導體製程技術導論”歐亞出版2004年9月,pp.310~342
[9] 黃志龍,“淺談化學機械拋光的演進與應用”,2000年5月號機械工業雜誌
[10] N. Guglielmi, “Kinetics of the Deposition of Inert Particles from Electrolytic Baths”, Journal of Electrochemical Society, Vol.119,1972, pp.1009-1012.
[11] J. P. Celis, J. R. Roos and C. Buelens, “A Mathemetical Model for the Electrolytic Codeposition of Particles with a Metallic Matrix”, Journal of Electrochemical Society, Vol.134, 1987, pp.1402-1408.
[12] 洪國翔,黃清安,許鴻生,涂肇嘉,徐富勇, “鎳基納米碳化矽複合電鍍之顯微結構及電化學分析”, 中國機械工程學會第十六屆全國學術研討會論文集.
[13] J. Zahavi , J. Hazan , “Electrodeposited Nickel Composites Containing Diamond Particles”, Plating and Surface Finishing, Vol.2, 1983, pp57~61.
[14] H. Ohmori, T. Nakagawa, “Mirror Surface Grinding of Silicon Wafer with Electrolytic In-Process Dressing”, Annals of the CIRP Vol.39/1/1990，pp329~332.
[15] H. Ohmori, T. Nakagawa, “Analysis of Mirror Surface Generation of Hard and Brittle Materials by ELID（Electronic In-Process Dressing）Grinding withSuperfine Grain Metallic Bond Wheel”, Annals of the CIRP Vol.44/1/1995，pp287~290.
[16]趙崇禮,馬廣仁,張永明,徐喜清,林宏裕, 許瓊姿, “樹脂結合劑鑽石砂輪精密輪磨加工矽晶圓表面性狀研究” , 機械工業雜誌90年8月號，pp87~101.
[17]Z.J. Pei, S.R. Billingsley and S. Miura, “Grinding induced subsurface cracks in silicon wafers”, International Journal of Machine Tools ＆ Manufacture vol.39, 1999,pp.1103-1116.
[18] 林三寶, “雷射原理與應用” ,全華科技圖書股份有限公司出版,1997年,pp184~209﹒
[19] 蘇癸陽編譯, “實用電鍍理論與實際”, 復文出版社, 1999.
[20] 沈寧一編, “表面處理工藝手冊”, 上海科學技術出版社, 1991.
[21]曾華梁等人編, “電鍍工藝手冊”, 機械工業出版社, 1997.
[22]曲敬信等人編, “表面工程手冊”, 化學工業出版社, 1998.
[23]李明逵編著, “矽元件與積體電路製程”, 全華科技圖書股份有限公司, 2002