本論文以Ag-Ti合金和AZO抗反射膜材料製作AZO/Ag-Ti/AZO多層薄膜；其中金屬薄膜係以直流磁控濺鍍系統方式成長，而氧化鋅薄膜使用旋轉塗佈技術和適當的焦化溫度製作。藉由改變Ag-Ti薄膜與AZO薄膜的厚度堆疊形成AZO/Ag-Ti/AZO多層膜結構，並對薄膜分別以四點探針、紫外線光譜儀、SEM與AFM量測並對多層膜微結構和光與電性質做探討。
研究結果發現，當AZO/Ag-Ti/AZO結構中之頂層AZO薄膜厚度為50 nm、中間Ag-Ti金屬夾層為9 nm、底層AZO薄膜厚度為35 nm時，其透光度可達78.92%，片電阻率可達1.86 Ω/□。當對底層AZO薄膜進行熱處理後再堆疊成多層膜時，其透光度與電阻率皆變得較差。

In this study, the tansparent conductive oxide (TCO) multilayer film AZO/Ag-Ti/AZO was fabricated with Ag-Ti alloy as conducting layer and AZO as anti-reflective material. The metal alloy was deposited by DC magnetron sputtering, and the AZO film deposition was performed by spin-coating technique and dried at suitable temperature. The thicknesses of Ag-Ti and AZO thin films were varied to fabricate AZO/Ag-Ti/AZO multilayer films. The microstructures of the multilayer films were observed by SEM and AFM. Sheet resistance was measured by using four-point probe. Optical transmittance was measured in the visible range by uv-vis spectrophotometer.
The results show that as the top of AZO thickness is 50 nm, intermediate Ag-Ti metal laminated to 9 nm, and the bottom of the AZO is 35 nm, the transmittance of multilayer film AZO/Ag-Ti/AZO can reach 78.92%, and the sheet resistance is 1.86Ω/□. When thermal annealing process was carried out to the bottom AZO film, the worse characteristics of the transmittance and resistance of the performed multilayer film were resulted.

誌謝 IV
摘要 V
ABSTRACT VI
目錄 VII
第一章　緒論 1
1-1 前言 2
1-2 研究動機與目的 5
第二章 理論分析 7
2-1 透明導電薄膜TCO的理論構造及特性 7
2-1-1 TCO 的光學原理 7
2-1-2 TCO 的導電原理 9
2-2 AZO透明導電膜結構與特性 11
2-2-1 AZO透明導電膜的電學性質 12
2-2-2 AZO透明導電膜的光學性質 13
2-3 溶膠-凝膠法 14
2-3-1 起始溶液的調配 15
2-3-2 薄膜製作 15
2-3-3 低溫焦化熱處理 16
2-3-4 高溫結晶熱處理 16
2-4 反應式磁控濺鍍 17
2-4-1 輝光放電 17
2-4-2 磁控濺鍍 18
2-4-3 直流濺鍍 18
2-4-4 薄膜沈積原理 19
2-4-5 薄膜表面及截面結構 20
第三章 實驗方法 21
3-1初始溶液的研製與調配 21
3-1-1初始原料的選用 21
3-1-2 溶液調配 22
3-2 薄膜的製作 22
3-2-1 基板的選擇與清洗 22
3-2-2 薄膜披覆 23
3-3 薄膜熱處理 23
3-3-1 低溫焦化熱處理 23
3-3-2 高溫結晶 24
3-4 濺鍍系統與Ag-Ti薄膜沈積 24
3-5 薄膜特性分析 25
3-5-1 掃描式電子顯微鏡(Scanning Electron Microscopy，SEM)分析 25
3-5-2 穿透率量測 26
3-5-3 四點探針量測 26
3-5-4 原子力顯微鏡(Atomic Force Microscopy, AFM)分析 27
第四章 結果與討論 28
4-1 熱重分析 28
4-2 AZO與Ag-Ti 薄膜參數之研究 29
4-2-1 Al掺雜濃度的選擇 29
4-2-2 AZO 參數的選擇 30
4-2-3 Ag-Ti 參數的選擇 31
4-3 多層膜的光電性質 34
4-3-1 透明導電膜的性能指數 34
4-3-2 固定Ag-Ti 與底層AZO薄膜厚度，改變頂層AZO薄膜厚度對AZO/Ag-Ti/AZO穿透率與電阻率之影響 35
4-3-3 固定頂層與底層AZO薄膜厚度，改變Ag-Ti沉積厚度對AZO/Ag-Ti/AZO穿透率與電阻率之影響 36
4-3-4 固定Ag-Ti 與底層AZO薄膜厚度，改變頂層AZO薄膜厚度對AZO/Ag-Ti/AZO穿透率與電阻率之影響 37
4-3-5 固定Ag-Ti 與頂層AZO薄膜厚度，改變底層AZO薄膜厚度對AZO/Ag-Ti/AZO穿透率與電阻率之影響 38
4-4多層膜底層AZO熱處理之研究 39
第五章 結論 42
參考文獻 44

圖目錄
圖1-1金屬薄膜光穿透示意圖 49
圖1-2氧化物膜光穿透示意圖 49
圖1-3金屬氧化物薄膜光穿透示意圖 49
圖2-1 TCO的光穿透、反射與吸收光譜的示意圖 50
圖2-2 ITO α2 –hν之關係圖 50
圖2-3 Burstein-Moss(BM) 偏移圖 51
圖2-4氧化鋅之結晶構造 51
圖2-5旋轉塗佈薄膜的步驟 52
圖2-6直流輝光放電結構與電位分佈圖 53
圖2-7平面型圓形磁控之結構圖 53
圖2-8平面磁控結構及電子運動路徑 54
圖2-9薄膜沈積步驟，(a)成核、(b)晶粒成長、(c)晶粒聚結、(d)縫道填補、(e)薄膜的沈積 54
圖2-10濺鍍參數對沈積薄膜之影響 55
圖3-1 AZO薄膜製作流程圖 55
圖3-2濺鍍系統圖 56
圖3-3射頻磁控濺鍍系統操作之流程圖 57
圖3-4 SEM 裝置原理示意圖 58
圖3-5四點探針原理示意圖 58
圖4-1不同鋁掺雜濃度的AZO溶液之TGA曲線圖：(a) 0 at.%、(b) 0.5 at.%、(c) 1 at.%、(d) 1.5 at.%、(e) 2 at.%59
圖4-2不同莫耳濃度之AZO起始溶液所製備的薄膜厚度60
圖4-3不同厚度的AZO薄膜之穿透光譜 60
圖4-4不同AZO薄膜厚度之SEM表面圖：(a) 20 nm、(b) 35 nm、(c) 50 nm、(d) 85 nm、(e) 105 nm、(f) 160 nm、(g) 200 nm 61
圖4-5不同AZO薄膜厚度之表面粗糙度：(a) 20 nm、(b) 35 nm、(c) 50 nm、(d) 85 nm、(e) 105 nm、(f) 160 nm、(g) 200 nm 62
圖4-6不同AZO薄膜厚度與表面粗糙度關係圖 63
圖4-7 Ag-Ti薄膜之沈積率 63
圖4-8不同Ag-Ti薄膜厚度之穿透率與電阻率 64
圖4-9不同Ag-Ti薄膜厚度之穿透光譜 64
圖4-10不同Ag-Ti薄膜厚度之SEM表面圖 65
圖4-11底層AZO薄膜厚度定為20 nm，Ag-Ti薄膜厚度定為6 nm， 改變不同頂層AZO 薄膜厚度的AZO/Ag-Ti/AZO多層膜之穿透光譜 66
圖4-12底層AZO薄膜厚度定為20 nm，頂層AZO 薄膜厚度定為20 nm，改變不同Ag-Ti薄膜厚度的AZO/Ag-Ti/AZO多層膜之穿透光譜 66
圖4-13底層AZO薄膜厚度定為20 nm，Ag-Ti薄膜厚度定為9 nm，改變不同頂層AZO 薄膜厚度的AZO/Ag-Ti/AZO多層膜之穿透光譜 67
圖4-14頂層AZO薄膜厚度定為50 nm，Ag-Ti薄膜厚度定為9 nm，改變不同底層AZO 薄膜厚度的AZO/Ag-Ti/AZO多層膜之穿透光譜 67
圖4-15經真空氣氛不同溫度熱處理後AZO薄膜之SEM圖：(a) without、(b) 400℃、(c) 500℃、(d) 600℃ annealing 68
圖4-16經O2氣氛不同溫度熱處理後AZO薄膜之SEM 圖：(a) without、(b) 400℃、(c) 500℃、(d) 600℃ annealing 69
圖4-17經N2氣氛不同溫度熱處理後AZO薄膜之SEM 圖：(a) without、(b) 400℃、(c) 500℃、(d) 600℃ annealing 70
圖4-18底層AZO經不同溫度與氣氛熱處理後，堆疊形成AZO/Ag-Ti/AZO多層膜之穿透光譜：(a) vacuum 、(b) O2 、(c) N2 71

表目錄
表1-1 透明導電膜之應用及其相關特性 72
表4-1 不同Al掺雜濃度下AZO薄膜之電阻率 73
表4-2 底層AZO薄膜厚度定為20 nm，Ag-Ti薄膜厚度定為6 nm，改變不同頂層AZO 薄膜厚度的AZO/Ag-Ti/AZO多層膜之光與電分析 74
表4-3 底層AZO薄膜厚度固定為20 nm，頂層AZO 薄膜厚度固定為20 nm，改變不同Ag-Ti薄膜厚度的AZO/Ag-Ti/AZO多層膜之光與電分析 75
表4-4 底層AZO薄膜厚度定為20 nm，Ag-Ti薄膜厚度定為9 nm，改變不同頂層AZO 薄膜厚度的AZO/Ag-Ti/AZO多層膜之光與電分析 76
表4-5 頂層AZO薄膜厚度定為50 nm，Ag-Ti薄膜厚度定為9 nm，改變不同底層AZO 薄膜厚度的AZO/Ag-Ti/AZO多層膜之光與電分析 77
表4-6 底層AZO經不同溫度與氣氛熱處理後，堆疊形成AZO/Ag-Ti/AZO多層膜之光與電分析：(a) vacuum、(b) oxygen、(c) nitrogen 78

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