依據使用RTP(rapid thermal process)搭配二元硒化物前驅物合成CuInSe2的概念(以下簡稱CIS)，先尋找何種前驅物疊層設計方式可以得到較好的CIS薄膜，在不同的疊層設計中(SLG/In-Se/Cu-Se/Se、SLG/Cu-Se/In-Se/Se、SLG/0.1In-Se/Cu-Se/0.9In-Se/Se、SLG/0.5In-Se/Cu-Se/0.5In-Se/Se)發現SLG/In-Se/Cu-Se/Se是最合適的疊層設計，接著在SLG/In-Se/Cu-Se/Se中以調變硒源瓶流率的方式合成不同的銅硒相(Cu7Se4、Cu3Se2；CuSe、CuSe2)，利用不同的銅硒相與銦硒相的搭配，找出最適合用來合成CIS的前驅物相組成，實驗結果顯示以SLG/In-Se/Cu-Se(含有CuSe、CuSe2)/Se的疊層，可以製備晶粒尺寸約1um，膜厚約在700nm至1um，從優取向為(112)平行基板法線方向且與基板附著性佳的CIS薄膜。薄膜檢測方法包括：SEM觀察晶粒大小和薄膜表面形貌、厚度；XRD檢測薄膜整體的相組成；Raman光譜儀檢測薄膜表層的相組成，並綜合XRD與Raman的結果，若有二次相殘留，可以判斷二次相是處於薄膜表層還是內部。

Following the concept utilize binary selenides as precursors with rapid thermal process (RTP) to fabricate CuInSe2 (CIS) thin film. In order to find the most promise process to get high quality CIS, several precursor stacking sequences have been tested which including SLG/In-Se/Cu-Se/Se, SLG/Cu-Se/In-Se/Se, SLG/0.1In-Se/Cu-Se/0.9/In-Se/Se, and SLG/0.5In-Se/Cu-Se/0.5/In-Se/Se, and the experiment result shows SLG/In-Se/Cu-Se/Se is the most suitable stacking sequence. Subsequently, varying Se flux to obtain several kinds copper selenides (Cu7Se4, Cu3Se2, CuSe, CuSe2) and indium selenides, try to find the suitable pairs through these binary selenides in SLG/In-Se/Cu-Se/Se structure. The suitable combination phase in Cu-Se precursor layer is CuSe blend with CuSe2. Large grain size CIS, about 1μm, can be prepared in such precursor phase with film thickness between 700nm to 1μm, strong (112) prefer-orientation vertical with substrate as well as good adhesion.
Films were characterized through scanning election microscopy (SEM) to obtain grain size, surface morphology as well as film thickness. The X-ray diffractometer (XRD) was used to identify phase contained in whole film, and the phase constitution near surface layer was examined by Raman spectroscopy. If there are some second phases remaining in the thin film, combining the phase examination result of XRD and Raman spectroscopy, it can be estimate the second phase exist in the surface layers or internal film area.

目錄
第一章 簡介 13
1.1前言 13
1.2太陽電池原理及分類 13
第二章 文獻回顧 15
2.1 CuInSe2材料性質………………………………………………15
2.2 CuInSe2薄膜製備方式簡介 15
2.2.1共蒸鍍法 15
2.2.2 硒化法 16
2.3快速硒化法 17
2.3.1單元素疊層RTP 17
2.3.2二元硒化物疊層RTP 17
2.4 單元素疊層與二元硒化物疊層RTP比較……………………18
2.5 實驗目的與動機………………………………………………19
第三章 實驗製程方法、分析儀器與步驟 22
3.1 CuInSe2反應前驅物鍍製 22
3.1.1前驅物銅銦比例調控 23
3.1.2 RTA退火爐 24
3.1.3蒸鍍源瓶製作 24
3.2 分析儀器 26
3.2.1XRD(X-ray繞射儀) 26
3.2.2Raman(拉曼)光譜儀 27
3.2.3SEM(掃描式電子顯微鏡) ………………………………27
3.3 實驗步驟 28
第四章 實驗結果與討論 30
4.1 快速硒化製程影響因素 30
4.1.1 持溫時間及升溫速率 30
4.1.2 前驅物疊層設計 31
4.1.2.1疊層順序………………………………………….31
4.1.2.2 前驅物厚度……………………………………… 32
4.1.3 不同Se/Cu比例合成銅硒前驅物data base 33
4.1.3.1 Se/In=1.2…………………………………………. 33
4.1.3.2 Se/Cu=0.63……………………………………….. 35
4.1.3.3 Se/Cu=1.21……………………………………….. 36
4.1.3.4 Se/Cu=1.6………………………………………… 36
4.1.3.5 Se/Cu=1.84……………………………………….. 36
4.1.4 銅硒相選擇 37
第五章 結論 40
第六章 參考文獻 41

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