在本文中，以量子井熱混合擴散方式(QWI)－內部晶格擴散(IFVD)，藉者熱擴張係數來增加表面應力使之調整材料能隙。在本篇文章中，使用主動層波長1530 nm材料為多重量子井InGaAsP 在P-InP(2um 厚度，上層)與n－InP(下層)之間，此多層結構被用來做為測試與雷射製程，而上層材料為接觸層p-InP(InGaAs，InP)做為比較。藉著不同程度大小的熱擴張係數如SiO2與不同接觸(InGaAs ，InP)，可以明顯看出QWI在此有很大的不同，而藉著離子
佈植方式去製造空隙在此沒有多大的依據變化。在InP 2um厚度以下的多重量子井材料InGaAsPy在此種方法下經由量測光激發光發知道波長位移超過70nm。並且在雷射結構共平面波導藉由QWI方法成功製作與呈現，波長位移如同光激發光測試。同時也可以知道此種材料可以成功\\\\\\\\用在QWI方法上。使用濺鍍SiO2材料就可以做出不同能隙的區域，要求達到對積體整合下須做重長晶的效果，提供QWI一個強大去調整能隙的方法。

In this work , impurity free vacancy diffusion (IFVD) quantum well intermixing(QWI) technology by high thermal-expansion-induced stress is used to perform bandgap engineering. In this paper, 1530nm InGaAsP
multiple QWs sandwiched by p-InP (2μm thickeneess, top) and n-InP (bottom) material is used as testing material structure also laser fabrication material, where contact materials (InGaAs and InP) on p-InP
are used for comparison. By the difference between thermal expansion coefficients of SiO2 on the different material (InGaAs, InP), large different behaviors of QWI are observed, while low different dependence on defects created by ion-implantation is found. Above 70nm photo luminance (PL) wavelength shift of InGaAsP MQW below 2μm thick InP is realized in this method. Further more, CW in-plane laser structures are also successfully fabricated and demonstrated by such QWI, giving the same shift as PL. It shows that good qualify of material can be obtained in such QWI method. Using local deposition of SiO2 causes different bandgap materials, re-growth free processing for monolithic integration can be expected, offering a powerful scheme of QWI for bandgap
engineering.

中文審定書 i
英文審定書 ii
中文摘要 iii
英文摘要 iv
致謝 v
目錄 vi
圖次 vii
第一章 簡介........................................................................10
1.1 前言………………………………………………........10
1.1.1 內部晶格缺位擴散(IFVD) by 顏宏戎………...........15
1.2 研究動機………………………………........................17
1.3 論文架構........................................................................18
第二章 理論...........................................................................................19
2.1 熱混合擴散原理(Quantum Well Intermixing QWI)......................................................................................20
2.2 內部晶格缺位擴散(Impurity-Free Vacancy Diffusion IFVD)與熱擴張係數
(thermal expansion coefficient )......................................23
2.3 計算熱混合擴散之量子井............................................26
2.4 熱混合擴散效應下能帶結構的改變............................28
2.5 量子井波函數與基態的計算........................................32
第三章 實驗測試與設計.....................................................35
3.1 RIE Ar plasma(RF power).........................................35
3.2 熱擴張係數(thermal expansion coefficient) 和
RIE Ar plasma (ECR power)............................................38
3.3 元件雷射製作................................................................45
3.3.1 熱混合擴散製程........................................................46 3.3.2 底切蝕刻被動波導.....................................................51
3.3.3 蒸鍍N型金屬..............................................................52
3.3.4 BCB製作平坦化.........................................................54
3.3.5 蒸鍍共平面電極.........................................................55
第四章 原件特性量測與討論.............................................56
4.1 吸收(absorption)與穿透(transmission)對能隙的影響..........................................................................................564.2 電激發光(Luminescence) 與電流對電壓與發光曲線(LIV-curve)...........................................................................60
第五章 結論........................................................................62
第六章 參考文獻................................................................63

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