摘要

我們使用InGaAlAs和InGaAsP為材料來製作波長1.55 mm，具光點轉換效果的多層量子井脊狀波導雷射。在水平轉換方面，我們製作寬度漸變式的脊狀波導，而在垂直轉換方面，則在主動層兩旁各加上一層導波層，使得水平及垂直的遠場發散角都能縮小。
根據模擬的結果，InGaAlAs脊狀波導雷射的遠場發散角在導波層寬度S = 0.1 mm的情形下，當波導結構為300-150-50 mm的漸變窄結構時，有最好的結果為16o × 27o（水平×垂直）。
量測結果方面，InGaAlAS脊狀波導雷射由於磊晶時鋅在MOCVD的腔體中殘留過多，使得成長時有鋅滲入主動層而影響到雷射的操作，並沒有成功的製作出光點轉換雷射。而InGaAsP的脊狀波導雷射，波導結構為200-250-50 mm的漸變窄結構所量測得到的發散角為18o × 28o，臨界電流為23 mA；另波導結構為200-250-50 mm的漸變寬結構所量測到的發散角為20o × 26o ，臨界電流為22 mA。

Abstract

We use InGaAlAs and InGaAsP as materials of 1.55mm multi-quantum-well spot-size converter ridge waveguide lasers. On lateral conversion, we fabricate a taper ridge waveguide. On vertical conversion, we add guard layers on each side of active layer.
For InGaAlAs ridge waveguide lasers, simulation results show a far field 16o × 27o（lateral × vertical）at guard layer width S = 0.1 mm with 300-150-50 mm narrow-tapered waveguide structure.
Due to large Zn background contamination in the MOCVD growth chamber, we did not fabricate the InGaAlAs lasers successfully. For the InGaAsP ridge waveguide lasers, we measure a far field 18o × 28o and a threshold current 23 mA for the 200-250-50 mm narrow-tapered waveguide structure; a far field 20o × 26o and a threshold current 22 mA for the 200-250-50 mm wide-tapered waveguide structure.

目錄

第一章 簡介..………………………...………………………………….1

第二章 結構設計與模擬結果…………………………………………..9
2-1 前言………………………………………………………………..9
2-2 磊晶層的設計……………………………………………………10
2-2-1 雷射材料的選擇....…………………………..……………10
2-2-2 主動層的設計……………………….…………………….11
2-2-3 光點轉換雷射的設計.……………..…………………...…12
2-3 模擬與模擬結果…………………………………………………13

第三章雷射製程………………………………………………………..24
3-1 寬面積雷射………………………………………………………24
3-2 脊狀波導雷射的製程……………………………………………30
3-2-1 定義脊狀波導………………………………..……………30
3-2-2 自我對準……………………………………..……………34
3-2-3 蒸鍍p型金屬………………………….………………….38
3-2-4 後續製程……………………………..……………………39

第四章 量測結果與分析.……………………………………………...40
4-1 前言………………………………………………………………40
4-2 InGaAsAs/InP雷射的量測及分析……………………………..41
4-3 InGaAsP/InP雷射的量測及分析………………………………42
4-3-1 寬面積雷射的量測……………………………..…………42
4-3-2 脊狀波導雷射的量測………………………………..……42

第五章 結論……………………………………………………………52

參考資料………………………………………………………………..54

參考資料

[1] Govind P. Agrawal, Niloy K. Dutta, "Semiconductor Lasers," Van Nostrand Reinhold, 1993.

[2] A. Kasukawa, R. Bhat, C. E. Zah, M. A. Koza, and T. P. Lee, "Very low threshold current density 1.5mm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure strained quantum well laser diode grown by MOCVD," Appl. Phys. Lett., vol. 59, pp. 2486-2488, 1991.

[3] M. L. Xu, G. L. Tan, J. M. Xu, M. Irikawa, H. Shimizu, T. Fukushima, Y. Hirayama, and R. S. Mand, "Ultra-high differential gain in GaInAs-AlGaInAs quantum wells：experiment and modeling," IEEE Photon. Technol. Lett., vol. 7, 99. 947-949, 1995.

[4] 中華電信研究所論文集

[5] I. Moerman, M. D`Hondt, W. Vanderbauwhede, P. Van Daele, P. Demeester, and W. Hunziker, "InGaAsP/InP strained MQW laser with integrated modesize converter using the shadow masked growth technique, " Electron. Lett., vol. 31, pp. 452-454, 1995.

[6] T.Brenner, W. Hunziker, M. Smit, M. Bachmann, G. Guekos, and H. Melchior, "Vertical InP/InGaAsP tapers for low-loss optical fiber-waveguide coupling," Electron. Lett., vol. 28, no. 22, pp. 2040-2041, 1992.

[7] G. Muller, B. Stegmuller, H. Westermeier, and G. Wenger, "Tapered In/InGaAsP waveguide structure for efficient fiber-chip coupling," Electron. Lett., vol. 25, pp. 675-690, 1994.

[8] K. Kasaya, Y. Hando, M. Okamoto, O. Mitomi, and M. Nagamuma, "Monolithically integrated DBR Lasers with simple tapered waveguide for low loss fiber coupling," Electron. Lett., vol. 29, no. 23, pp. 2067-2068, 1993.

[9] J.N.Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron., vol. 28, pp. 623-645, 1995.

[10] G. R. Hadley, "Design of tapered waveguides for improved output coupling," IEEE Photon. Technol. Lett., vol. 5, pp. 1068-1070, 1993.

[11] D. E. Bossi, W. D. Goodhue, M. C. Finn, K. Rauschenbach, J. W. Bales, and R. H. Rediker, "Reduced-confinement antennas for GaAlAs integrated optical waveguides," Appl. Phys. Lett., vol. 56, no. 5 , pp. 420-422, 1990.

[12] E. Colas, A. Shahar, and W. J. Tomlinson, "Diffusion-enhanced epitaxial growth of thickness-modulated low-loss rib waveguide on patterned GaAs substrates," Appl. Phys. Lett., vol. 56, no. 10, pp. 955-957, 1990.

[13] R. J. Deri, C. Caneau, E. Colas, L. M. Schiavone, N. C. Andradakis, G. H. Song, and E. C. M. Pennings, "Integrated optical mode-size tapers by selective organometallic chemical vapor deposition of InGaAsP/InP," Appl. Phys. Lett., vol. 61, no. 8 , pp. 952-954, 1992.

[14] Ingrid Moerman, Peter P. Van Daele, and Piet M. Demeester, "A Review on fabrication technologies for the Monolithic Integration of Tapers with III-V Semiconductor Devices," IEEE J. Selected Topics in Quant. Electron., vol. 3, no. 6, pp. 1308-1320, 1997.

[15] M. Alloven and M. Quillec, "Interest in AlGaInAs on InP for optoelectronic applications," IEE Proceedings-J, vol. 139, no. 2, pp. 148-152, 1992.

[16] E. V. K. Rao, P. Ossart, H. Thibierge, M. Quillec, and P. Bradshaw, "Enhancement of group III atom interdiffusion by non-dopant oxygen implant in InGaAs-InAlAs MQW," Appl. Phys. Lett., vol. 57, pp. 2190-2192, 1990.

[17] M. Alloven, M. Quillec, M. Blez, and C. Kazmierski, "MBE growth index AlGaInAs MQW lasers on InP," J. Crys. Growth, vol. 111, pp. 484-488, 1991.