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博碩士論文 etd-0825104-141347 詳細資訊
Title page for etd-0825104-141347
論文名稱
Title
常溫下之微金屬帽蓋封裝製程及其應力應變關係分析
The Packaging Process of Metal Microcap under Room Temperature Status and Its Shear Stress-Strain Relationship Analysis
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
76
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2004-06-26
繳交日期
Date of Submission
2004-08-25
關鍵字
Keywords
金屬帽蓋、常溫接合、接合剪力強度
room temperature bonding, metal microcap, bonding shear strength
統計
Statistics
本論文已被瀏覽 5698 次,被下載 5540
The thesis/dissertation has been browsed 5698 times, has been downloaded 5540 times.
中文摘要
藉由新式的常溫接合方法來封裝微元件,此種接合方法可以在常溫下藉由微金屬帽蓋來封裝微元件,而此接合方式不僅可以提供微元件機械式的保護以外,更可以使其免於受到外界污染。此種常溫接合方式是傳統封裝所不能達到的,也是驅動今日改善晶圓級封裝的一個重大影響因素。利用ASTM標準試片規範作為巨觀標準用以評估比較微觀之鎳金屬帽蓋其界面剪應力、剪應變之關係及影響之因素。母模晶圓片在光刻之前必須先進行氧化作用層處理,而蝕刻的尺寸大小以及帽蓋和基板的接觸面積可以經由光罩設計以及掌握光阻曝光精度來加以控制。採取鈍化處理製程作為將金屬帽蓋於脫離母模時,能更容易的脫模。本篇論文中所採用的微電鑄製程技術相較於傳統的微精細加工方式而言不僅能更精確的製作微金屬帽蓋,此外微電鑄技術更能精確的控制帽蓋之電鑄厚度。藉由此電鑄技術所製作的微金屬帽蓋與微機械加工技術所製作的薄膜聚合矽而言,微電鑄技術製程優點多且品質較好。本篇論文中,利用玻璃材料作為基板的原因是玻璃透光的特性可用以執行紫外光膠著製程。此種膠著劑可以於室溫下進行膠著製程,而其膠著結果顯示出其具有極佳的接合強度。鈍化結果、電鑄沉積速率亦利用掃描電子顯微鏡(SEM)擷取結果加以分析。微金屬帽蓋和ASTM標準試片的剪應力、剪應變之關係,於此篇論文中亦作探討與分析。
Abstract
A novel room temperature bonding method is used to package the micro-component. The bonding method utilizes metal microcap to package the micro-component under room temperature status, which not only can provide micro-component mechanical support also can prevent micro-component from contamination. The bonding condition under room temperature is the most conventional method can not achieve, which characteristic is the most significant effect factor to drive the wafer-level packaging process to improve in today. Utilizing ASTM standard, which was used as a macroscopic standard to evaluate and analyze the bonding shear strength relationship between the ASTM standard specimen and the metal microcap. The carrier wafer has been oxidized before photolithography process; the diameter of cavity and the contact area between the metal microcap and glass substrate were controlled by the photomask design and the accuracy of the photoresist exposure. The passivation treatment was developed to separate the microcap from the carrier wafer more easily. In this thesis, the metal microcap was fabricated by using electroforming process, which can control the thickness of metal microcap. The advantages of microcap are superior to the thin film poly-silicon made by the surface micromachining technique on the quality and mechanical properties. A glass is used as substrate of the metal microcap, and its transparent characteristic is a feature how we perform UV curing process. The adhesive can be cured under room temperature and the results exhibit the adhesive has excellent bonding strength. SEM is used to analyze the passivation result, the increasing rate of electroforming thickness. The shear stress-strain relationship between the metal microcap and the ASTM standard specimen is also discussed and analyzed in this thesis.
目次 Table of Contents
CONTENTS
CONTENTS…………………………………………………………Ⅰ
LIST OF TABLE…………………………………………………Ⅲ
LIST OF FIGURE…………………………………………………Ⅳ
ABSTRACT (In Chinese)……………………………………………Ⅶ
ABSTRACT (In English)………………………………………………Ⅸ

CHAPTERS page
1. INTRODUCTION…………………………………………………1
1.1 Motivation………………………………………………………1
1.2 Literature Review……………………………………………4

2. EXPERIMENTAL PROCEDURE……………………………………8
2.1 Fabrication of the metal microcap…………………………8
2.2 Pattern transfer…………………….…………………………9
2.3 Etching process………………………………………………11
2.4 Seed layer process……………………………………………12
2.5 Passivation treatment…………………………………………12
2.6 Micro-electro-deposition process…………………………13
2.7 ASTM standard experimental test……………………………15
2.8 The UV curable adhesives characteristic…………………16
2.9 Bonding and separating process……………………………18
2.10 The shear stress-strain test of metal microcap……18

3. RESULTS AND DISCUSSIONS……………….…………………27
3.1 Experimental results……………………………………27
3.2 Shear stress-strain test results…………………………31

4. CONCLUSIONS……………………………………………………54

REFERENCES……………………………………………………56

APPENDIX………………………………………………………60
參考文獻 References
REFERENCES
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