國立中山大學,National Sun Yat-sen University,學位論文,thesis/dissertation,氮化鎵生長於藍寶石基板之微結構缺陷分析 ,Analysis of microstructures and defects of GaN grown on sapphire substrates

論文名稱 Title	氮化鎵生長於藍寶石基板之微結構缺陷分析 Analysis of microstructures and defects of GaN grown on sapphire substrates
系所名稱 Department	材料與光電科學學系 Department of Materials and Optoelectronic Science
畢業學年期 Year, semester	97 學年度第 2 學期 The spring semester of Academic Year 97	語文別 Language	中文 Chinese
學位類別 Degree	碩士 Master	頁數 Number of pages	48
研究生 Author	李俊諭 Jyun-yu Li
指導教授 Advisor	周明奇 Ming-Chi Chou
召集委員 Convenor	甘德新 Gan、Der shin
口試委員 Advisory Committee	張六文 Liuwen Chang
口試日期 Date of Exam	2009-06-29	繳交日期 Date of Submission	2009-08-25
關鍵字 Keywords	穿透式電子顯微鏡 TEM
統計 Statistics	本論文已被瀏覽 5639 次，被下載 27 次 The thesis/dissertation has been browsed 5639 times, has been downloaded 27 times.

中文摘要
本文研究成長於藍寶石基板上之GaN薄膜顯微結構，包含GaN薄膜與基板交界處以及GaN薄膜中InGaN/GaN多層量子井結構(MQW)。GaN薄膜的表面以光學顯微鏡(OM)可觀察到磊晶過程所產生的細小線條，分別以掃描式電子顯微鏡(SEM)以及穿透式電子顯微鏡(TEM)對此線條做分析。在分析GaN薄膜時發現InGaN/GaN的位置存在V-shape defect，而且V-shape defect正上方對應著表面粗糙化之後的凹陷位置，進一步使用陰極發光(CL)與TEM分析V-shape的存在對GaN薄膜生長的影響。
Abstract
The study aims at investigating the microstructures of GaN grown on sapphire substrate, including the interface between GaN and substrate as well as the InGaN/GaN multi quantum well (MQW) in GaN film. Some tiny straight lines on the surface of GaN film produced from epitaxy process can be observed by optical microscope. The scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to analyze the lines. When analyzing the GaN film, we discovered some V-shape defects in the InGaN/GaN and above which the roughening hollows corresponded to the defects. Therefore, we used Cathodoluminescence and TEM to further analyze the influence of V-shape defects on the growth of GaN film.

目次 Table of Contents
摘要……………………………………………………………………………………I Abstract………………………………………………………………………………..II 表目錄………………………………………………………………………………..IV 圖目錄………………………………………………………………………………...V 第一章概論…………………………………………………………………………1 1-1 前言………………………………………………………………………….…1 1-2 GaN的結構與性質…………………………………………………………..…2 1-3 藍寶石基板………………………………………………………………….…3 1-4 文獻回顧…………………………………………………………………….…5 1-5 研究動機…………………………………………………………………….10 第二章量測系統概述…………………………………..…………………………12 2-1 X光繞射分析儀(X-ray diffraction, XRD) ……………………………12 2-2 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM) …………………12 2-3陰極發光(Cathodoluminescence, CL) ………………………………………12 2-4 穿透式電子顯微鏡(Transmission Electron Microscope, TEM) ………….…13 第三章實驗方法…………………………………………………………………..15 3-1 實驗方法與步驟……………..….…..…….…………..……….……………15 3-1-1 光學顯微鏡(OM) ………………………………..………….…………..15 3-1-2 掃描式電子顯微鏡(SEM) …………………………………………….. 15 3-1-3 穿透式電子顯微鏡(TEM) …………………………………………………16 第四章結果與討論………………………………………………………………..17 4-1光學顯微鏡(OM)分析…………………………………………………………17 4-2掃描式電子顯微鏡(SEM)分析………………………………………………..19 4-3穿透式電子顯微鏡(TEM)分析………………………………………………..21 4-4陰極發光(CL)分析………………………….…………………………………35 第五章結論………………………………………………………………………..37 參考文獻……………………………………………………………………………..38

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