本文是以光致螢光(photoluminescence)的量測來研究m面三五族氮化物的螢光偏振性質。m面氮化鎵、氮化銦鎵是以電漿輔助分子束磊晶(plasma -assisted molecular beam epitaxy， PAMBE)成長在m面藍寶石基板上。本實驗樣品在溫度10K下經光致螢光量測之後，皆有螢光偏振性質的特性，其偏振性質為─螢光強度沿樣品a軸方向大於沿c軸方向，偏振率約為65%。而在低溫量測時峰值位置沒有隨著偏振方向改變。
在光致螢光的實驗量測中，藉由二分之一波片及四分之一波片改變雷射激發光源的偏振方向。目的為用圓偏振及各方向的線偏振光源以激發樣品，被激發出的螢光通過偏振片由光電倍增管偵測器偵測，再藉由改變偏振片角度來分析螢光在各偏振方向的峰值位置、強度變化等。

Polarization dependent photoluminescence (PL) study in 10K of m-plane III-nitrides was discussed in this thesis. Two samples were investigated: m-plane GaN film grown on m-sapphire substrate and m-plane InGaN film grown on m-GaN/m-sapphire substrate by plasma -assisted molecular beam epitaxy (PAMBE). Polarized luminescence characteristics were told by polarization dependent PL spectra in these two samples. Circular polarized, linear polarized and unpolarized laser sources were used to excite the samples. The results showed the PL intensity along the a-axis of the sample was stronger than along the c-axis with a polarization ratio with 65%; moreover, the peak positions showed polarization independent characteristic under a low temperature environment with 10K.

第一章 序論---------------------------------8
第二章 實驗原理----------------------------10
2.1 螢光----------------------------------10
2.1.1 螢光導論-------------------------10
2.1.2 光致螢光-------------------------10
2.1.3 輻射偶合-------------------------11
2.1.4 躍遷機制-------------------------12
2.2 史塔克量子侷限效應------------------------- 15
2.3 偏振----------------------------------17
2.3.1 偏振導論-------------------------17
2.3.2 偏振片與波片原理-----------------18
2.3.3 非極性三五族氮化物的偏振性質-----23
2.4 掃描式電子顯微鏡----------------------26
2.5 電子背向繞射系統----------------------27
第三章 儀器介紹及實驗方法-------------------30
3.1 儀器介紹------------------------------30
3.2 實驗方法------------------------------35
3.2.1實驗架設-------------------------35
3.2.2 偏振片及波片的架設----------------36
3.2.3 光柵對偏振的影響------------------40
第四章 樣品介紹-----------------------------43
第五章 實驗結果分析-------------------------44
5.1 SEM與EBSD分析---------------------44
5.2 光致螢光------------------------------46
5.2.1.圓偏振激發光源入射
(a)m-GaN-----------------------------46
(b)m-InGaN---------------------------56
5.2.2 線偏振激發光源平行晶體c軸方向入射
(a)m-GaN-----------------------------49
(b)m-InGaN---------------------------58
5.2.3 線偏振激發光源與晶體c軸方向夾45度
角入射
(a)m-GaN-----------------------------51
(b)m-InGaN---------------------------60
5.2.4 線偏振激發光源垂直晶體c軸方向入射
(a)m-GaN-----------------------------53
(b)m-InGaN---------------------------62
5.3 討論----------------------------------66
第六章 結論---------------------------------71
Reference ----------------------------------72
附錄----------------------------------------75

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