本論文致力於研究1/2及1/4波長固態微型共振器之元件製作及其特性分析；先利用射頻磁控濺鍍系統沈積氮化鋁壓電薄膜，並探討氮化鋁薄膜於不同濺鍍條件下的特性，以求得最佳濺鍍參數。接著利用雙靶交直流濺鍍系統，交替沈積不同對數且符合1/2及1/4波長SMR的反射層結構。最後搭配壓電層薄膜製作1/2及1/4波長SMR元件，並進行特性量測分析。
在壓電層結構的研究中發現，於249W、15mtorr、300℃、氮氣分率60%及軸心距0cm時可得一C軸優選取向的氮化鋁，經AFM分析表面粗糙度為1.783nm，而由XRD分析顯示FWHM=3.507°，以SEM觀察顯示其具有良好的結晶表面與柱狀結構。
由頻率響應分析得知，1/2波長SMR元件於4 對反射層時共振效果最佳，折返損失可達-57.23dB；1/4波長SMR元件於3 對反射層共振效果最佳，折返損失可達-30.68dB插入損失亦最小。Kt2值在1/2波長SMR元件中，最佳可達7.88%；Q值在1/4波長SMR元件中最佳可達4231.29。

In this thesis, we emphasized on fabrication and anlysis of 1/4 and 1/2 λ mode solidly mounted resonators. First, the reactive RF magnetron sputter used to deposit the highly c-axis-oriented aluminum nitride (AlN) piezoelectric films under different parameters. The various c-axis tilt angle also used it by altering the distance between substrate and target to investigate the characteristics.
To accomplish the two modes of different pairs of Bragg reflector, the RF/DC sputter system is adopted alternating layers of quarter-wavelength Mo and SiO2 thin films by different sequence. Finally, depositing the highly c-axis-oriented AlN on reflectors to complete the 1/4 and 1/2 λ mode SMR.
The AlN thin film achieve a very low roughness of 1.783nm under AFM measurement, the FWHM of XRD(002) peak is 3.507°and SEM images also exhibit a highly oriented c-axis structure.
The optimum frequency responses of 1/2 λ mode SMR is obtained with return loss of -57.23dB at 4 pairs reflectors,which for 1/4 λ mode SMR is -30.68dB at 3 pairs. The maximum electromechanical coupling coefficient (Kt2) of 1/2 λ mode SMR is 7.88%, but the quality factor (Q) of 1/4 λ mode SMR is 4231.29.

目錄
摘要 I
目錄 III
圖表目錄 VI
第一章 前言 1
第二章 理論分析 6
2.1 AlN結構與特性 6
2.2 壓電理論 7
2.2.1 壓電效應 8
2.3 反應性射頻磁控濺鍍原理 9
2.3.1 輝光放電 9
2.3.2 磁控濺射 10
2.3.3 射頻濺射 11
2.3.4 反應性濺射 12
2.4 SMR的理論 13
2.4.1 SMR的特點 14
2.4.2 SMR的理論分析 14
2.4.3 λ/4與λ/2型態的SMR 17
2.5 SMR的參數性質 18
2.5.1 Kt2值測量 18
2.5.2 Q值測量 19
2.5.3 Frequency Of Merit (FOM)值定義 22
第三章 實驗 21
3.1 基板的清洗 21
3.2 交/直流濺鍍系統與薄膜沉積 22
3.3 射頻濺鍍系統與薄膜沉積 24
3.4 離軸式氮化鋁薄膜沉積 25
3.5 黃光微影製程 25
3.6 X光繞射(X-Ray Diffraction, XRD)分析 27
3.7 掃描式電子顯微鏡 27
3.8 原子力測量顯微鏡 28
3.9 SMR的製作 29
3.9.1 反射層的製作 29
3.9.2 壓電層的製作 31
3.10 元件之設定參數 32
3.11 元件電性測量 33
第四章 結果與討論 34
4.1 壓電層的探討 34
4.1.1 濺鍍功率之影響 35
4.1.2 濺鍍壓力之影響 36
4.1.3 基板溫度之影響 36
4.1.4 氮氣分率之影響 37
4.1.5基板與軸心距離之影響 38
4.1.6最佳氮化鋁壓電薄膜製備 41
4.2 反射層的探討 41
4.2.1 λ/2波長模態SMR反射層的探討 42
4.2.2 λ/4波長模態SMR反射層的探討 42
4.3 SMR元件的物性探討 43
4.3.1 λ/2 SMR元件的物性探討 43
4.3.2 λ/4 SMR元件的物性探討 44
4.4 SMR元件量測結果探討 44
4.4.1 λ/2 SMR元件量測結果探討 45
4.4.2 λ/4 SMR元件量測結果探討 45
4.4.3 λ/2 vs. λ/4 SMR元件量測結果比較 46
4.4.4 λ/2 vs. λ/4 SMR base on ZnO量測結果比較 48
第五章 結論 49
參考文獻 52
圖1-1 SMR元件上視圖與側視圖 59
圖1-2 體聲波元件的類型 60
圖2-1 反應性濺射之模型 61
圖2-2 AlN的晶體構造 62
圖2-3 壓電效應 63
圖2-4 直流輝光放電結構與電位分佈圖 64
圖2-5 平面型圓形磁控之結構圖 65
圖2-6 平面磁控放電之剖面圖 65
圖2-7 負載阻抗對層數的關係圖 66
圖2-8 波長為λ/2型態的SMR 67
圖2-9 阻抗(Zload)與反射層層數(n)之關係圖 68
圖2-10 波長為λ/4型態的SMR 69
圖3-1 直流磁控濺鍍系統 70
圖3-2 交直流磁控濺鍍系統操作流程圖 71
圖3-3 射頻磁控濺鍍系統 72
圖3-4 基板與軸心距離成長氮化鋁示意圖 73
圖3-5 舉離法流程圖 74
圖3-6 SMR製作流程圖 75
圖3-7 SMR 三道光罩圖 76
圖4-1 不同濺鍍功率下氮化鋁之SEM圖 77
圖4-2 不同濺鍍功率下氮化鋁之XRD圖 78
圖4-3 不同濺鍍壓力下氮化鋁之SEM圖 79
圖4-4 不同濺鍍壓力下氮化鋁之XRD 80
圖4-5 不同基板溫度下氮化鋁之SEM圖 81
圖4-6 不同基板溫度下氮化鋁之XRD圖 82
圖4-7 不同氮氣分率下氮化鋁之SEM圖 83
圖4-8 不同氮氣分率下氮化鋁之XRD圖 84
圖4-9 不同基板至軸心距離之SEM圖 85
圖4-10 不同基板至軸心距離之AFM圖 86
圖4-11 最佳濺鍍參數下之氮化鋁SEM圖 87
圖4-12 最佳濺鍍參數下之氮化鋁AFM圖 88
圖4-13 最佳濺鍍參數下之氮化鋁XRD圖 89
圖4-14 實際阻抗趨勢圖 90
圖4-15不同對數下二分之一波長模式反射層之SEM圖 91
圖4-16不同對數下二分之一波長模式反射層之AFM圖 92
圖4-17不同對數下四分之一波長模式反射層之SEM圖 93
圖4-18不同對數下四分之一波長模式反射層之AFM圖 94
圖4-19 不同對數下二分之一波長模式SMR元件之SEM圖 95
圖4-20 不同對數下二分之一波長模式SMR元件之AFM圖 95
圖4-21 不同對數下四分之一波長模式SMR元件之SEM圖 96
圖4-22 不同對數下四分之一波長模式SMR元件之AFM圖 96
圖4-23 SMR元件整體粗糙度趨勢 97
圖4-24 1對反射層 λ/2模式SMR訊號量測 98
圖4-25 2對反射層 λ/2模式SMR訊號量測 98
圖4-26 3對反射層 λ/2模式SMR訊號量測 99
圖4-27 4對反射層 λ/2模式SMR訊號量測 99
圖4-28 1對反射層 λ/4模式SMR訊號量測 100
圖4-29 2對反射層 λ/4模式SMR訊號量測 100
圖4-30 3 對反射層λ/4模式SMR訊號量測 101
圖4-31 4對反射層 λ/4模式SMR訊號量測 101
圖4-32 λ/2模式SMR 元件之Kt2與Q值趨勢圖 102
圖4-33 λ/4模式SMR元件之 Kt2與Q值趨勢圖 102
圖4-34 λ/2與λ/4 SMR元件之FOM趨勢圖 103
表一 常用的壓電材料 104
表二 AlN材料基本特性 104
表三 反應性射頻磁控濺鍍系統沉積氮化鋁之參數 105
表四 直流濺鍍系統沉積Mo和SiO2薄膜之參數 105
表六 JCPDS datas of AlN powder 106
表六 材料聲波特性參數 107
表七 氮化鋁參數測試條件 107

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