在本論文中，藉由改變溫度及改變激發源強度的光致螢光實驗，分別探討樣品的結晶品質與載子躍遷產生螢光方式，並利用光致螢光實驗結果，以四種不同的計算公式，得到內部量子效率 (Internal Quantum Efficiency) ，並討論四種方式的差別性。由實驗結果得知非極性氮化鎵與非極性氮化銦 (non-polar GaN and non-polar InN) 之內部量子效率高於極性氮化鎵與極性氮化銦 (polar GaN and polar InN)這與期待利用非極性氮化物來降低內建電場對發光效率的影響相符合，另外還可藉由增加內部量子效率來改善樣品的結晶品質。

This thesis discusses the crystal quality and transition of electrons and holes pairs by temperature- and power- dependent Photoluminescence (PL). With the PL spectra, we apply four kinds of Internal Quantum Efficiency (IQE) formulas for c- and m- plane III-nitride and discuss the differences of the four formulas. An analysis of IQE is performed and it is found for m-plane III-nitride being larger than c-plane III-nitride. This result confirms that characteristic m-plane structure can increase its
radiative recombination.

目錄 ------------------------------------------------------------------------------- 1
圖目錄 -----------------------------------------------------------------------------3
表目錄 -----------------------------------------------------------------------------8
摘要--------------------------------------------------------------------------------10
第一章 序論---------------------------------------------------------- ---------11
第二章 實驗原理------------------------------------------------------------- 12
2.1光致螢光(Photoluminescence) --------------------------- 12
2.1.1螢光導論----------------------------------------------- 12
2.1.2光致螢光------------------------------------------------12
2.1.3 輻射耦合與非輻射耦合---------------------------- 13
2.1.4直接能隙材料與間接能隙材料---------------------14
2.1.5能帶的躍遷---------------------------------------------15
2.2 雷射功率對光致螢光的影響--------------------------------18
2.3 溫度對光致螢光的影響 ------------------------------------ 18
2.3.1 溫度對螢光強度的關係---------------------------- 18
2.3.2 溫度對能隙的關係 -------------------------------- 20
2.4 內部量子效率(Internal quantum efficiency,IQE) -21
第三章 實驗系統介紹------------------------------------------------------ 25
第四章 樣品介紹------------------------------------------------------------ 30
4.1 三五族氮化物結構------------------------------------------- 30
4.2 樣品成長參數 ----------------------------------------------- 31
第五章 實驗結果分析------------------------------------------------------ 33
5.1改變激發光源強度光致螢光光譜分析-------------------- 33
5.2 變溫光致螢光光譜分析------------------------------------- 43
5.2.1溫度對螢光能隙的分析----------------------------- 43
5.2.2溫度對螢光強度的分析 ----------------------------49
5.3 內部量子效應(IQE)計算 ---------------------------------- 54
5.3.1 四種內部量子效應計算方式------------------------62
5.3.2 討論------------------------------------------------------79
第六章 結論 ----------------------------------------------------------------- 84
Reference ----------------------------------------------------------------------- 85
Appendix A ---------------------------------------------------------------------- 86
Appendix B ---------------------------------------------------------------------- 92

[1] S. Nakamura, Y. Harada, and M. Seno, Appl. Phys. Lett. 58, 2021 (1991)
[2] D.R. Vij ”Luminescence of Solids”, p.3
[3] MARK FOX “Optical Properties of Solids”, p.98
[4] E. Fred Schubert, “Light-Emitting Diodes”, p.35
[5] T.J. Dean, Prog. Cryst. Growth Charact. 5, 89 (1982)
[6] D.E. C00PER, J. Bajaj, and P. R. Newmann, J. Cryst. Growth 86, 544 (1988)
[7] Z. C. Feng, A. Mascarenhas, and W.J. Choyke, J. Lumin. 35, 329 (1986)
[8] T. Schmidt, K. Lischka and W. Zulehner, Phys. Rev. B 45,8989 (1992)
[9] D.R. Vij ”Luminescence of Solids”, p.113
[10] M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, J. Appl. Phys., 86, 7, 3721-3228, (1999)
[11] G.W. Shu, M.H. Lo, M.D. Yang, C.L. Hsu, J.L. Shen and S.M. Lan, Solid State Communications 141, 109-112 (2007)
[12] Y. P. Varshni, Physica 34, 149 (1967)
[13] S. Watanabe, N. Yamada and H. Kudo, Appl. Phys. Lett. 83, 24, 4906-4908 (2003)
[14] Q. Kim and D. W. Langer, Phys. Status Solidi B 122, 263 (1984)
[15] S. Tripathy, R. K. Soni, H. Asahi, K. Iwata, R. Kuroiwa, K. Asami, S. Gonda, J. Appl. Phys. 85, 12, 8386-8399 (1999)
[16] W. Shan, T. J. Schmidt, X. H. Yang, S. J. Hwang, J. J. Song and B. Goldenberg, Appl. Phys. Lett., 66, 8, 985-987 (1995)
[17] H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, T D. Moustakas, J. Appt. Phys. 76, 4, 2429-2434 (1994)
[19] V. Yu. Davydov et al., Appl. Phys. Lett. 75, 3297 (1999)
[20] W. C. Ke, C. P. Fu, C. Y. Chen, L. Lee, C. S. Ku, W. C. Chou, W.-H. Chang, M. C. Lee, and W. K. Chena, Appl. Phys. Lett., 88, 191913 (2006)
[21] Ching-Lien Hsiao, Hsu-Cheng Hsu, Li-Chyong Chen, Chien-Ting Wu , Chun-Wei Chen, Min Chen, Li-Wei Tu and Kuei-Hsien Chen, Appl. Phys. Lett., 91, 181912 _2007_
[22] G. W. Shu, P. F. Wu, M. H. Lo, J. L. Shen, T. Y. Lin,, H. J. Chang , Y. F. Chen, C. F. Shih, C. A. Chang and N. C. Chen, Appl. Phys. Lett. 89, 131913 (2003)
[23] G.W. Shua, M.H. Loa, M.D. Yanga, C.L. Hsua, J.L. Shena,_, S.M. Lanb, Solid State Communications 141, 109–112 (2007)
[24] M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies,
and P. Gibart, J. Appl. Phys. 86, 3721 (1999).