利用濺鍍元素疊層加上真空硒化法二階段製程製作Cu2ZnSnSe4(CZTSe)，使用元素疊層作為前驅層，其疊層順序(stacking priority)Sub/Zn/Sn/Cu，將前驅層預先做真空熱退火處理，後在真空腔體硒的氣氛下硒化，成功的以此方法製作出接近單一相CZTSe，其組成雖偏離預估組成，但其元素比例變動有一定的趨勢，此方式可以在特定組成區域內做成分上的掌控，藉由Raman光譜分析和XRD作相鑑定，以SEM與EPMA做表面形貌及成份均勻性的觀察，測定薄膜內的成分化合物成分含量比例多寡推定之後膜厚的調整。
以此法所做出之CZTSe薄膜其在電性上為p-type導電型態，電阻率範圍在10-210-1Ω-cm之間，能隙落在0.8~1.1eV間，藉由XRD、Raman作相鑑定(phase identity)，搭配電阻率、EPMA和光吸收範圍作組成和薄膜特性的關聯程度，其目的在界定使用此製程所可以合成之CZTSe薄膜之相組成範圍，合成單一相範圍落在前驅物比例為Zn/Sn=1.2,0.8<Cu/(Zn+Sn)<1;Cu/(Zn+Sn)=0.8,1.2<Zn/Sn≦1.5之間，此製程在EPMA結果顯示在薄膜成分上的掌控和成分組成均勻度佳。
另外此製程在CZTSe薄膜之附著性質表現不佳導致SEM照片拍攝不易，未來在技術方面尚須克服此點。

Making CZTSe thin film of sputtering and Selenization.Sputtering Zn、Sn precursor layers on Soda-lime glass，and using evaporating to stack Cu layer.Let it annearing under Selenium atmosphere for less then one hour.
We are looking forward a profit annealing process to grow CZTSe thin film.By changing temperature of Substrate、annealing time and heating rate of Substrate.
Using XRD and Raman to analysis composition and crystal structure. The morphology from SEM images.Taking analysis on optical and electronic property of the thin film.

誌謝 i
摘 要 ii
Abstract iii
目 錄 iv
圖 次 vi
表 次 viii
第1章、 簡介 1
1.1 前言 1
1.2 太陽能電池原理 2
1.3 研究動機與目的 3
第2章、 文獻回顧 5
2.1 太陽電池材料之歷史演進 5
2.2 (I-III-VI、I-II-IV-VI)化合物性質 7
2.2.1 晶格結構 8
2.2.2 能隙值 10
2.2.3 光性 11
2.3 主吸收層製程簡介 12
2.3.1 製程介紹 12
2.3.2 快速&慢速硒化過程的優缺點[31] 12
2.4 太陽電池元件疊層介紹 13
第3章、 實驗製程方法與分析儀器之介紹 15
3.1 薄膜製程儀器 15
3.1.1 濺鍍系統[32] 15
3.1.2 蒸鍍系統[32] 15
3.1.3 化學水浴法 16
3.2 薄膜分析方法 17
3.2.1 X光繞射儀(X-Ray Diffraction) 17
3.2.2 拉曼光譜儀 17
3.2.3 四點探針(Four-point probe) 18
3.2.4 掃描式電子顯微鏡(SEM) 18
3.2.5 電子探針微區分析儀(EPMA) 18
3.3製程選用 20
3.4 CZTSe薄膜成長流程 22
3.4.0實驗參數 22
3.4.1 金屬前驅層製作(濺鍍) 23
3.4.2 金屬前驅層熱處理 23
3.4.3 硒化 28
第4章、 試片分析與討論 31
4.1 XRD、Raman分析 32
4.2 EPMA定量分析 33
4.3 光性量測 36
4.4 電性分析 39
4.5電子顯微鏡 40
第5章、 結論 45
參考文獻 46
附錄 51
EPMA原始檔 51

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