本研究致力於450℃低溫製程，藉由銻元素(antimony, Sb)的加入使CuIn1-xGaxSe2結晶品質提高，並將原本的CuInSe2複晶薄膜的兩階段共蒸鍍製程加入鎵元素(gallium, Ga)，進一步探討CIGS的結晶結構的變化，並由穿透光譜得到能隙位置。
加入鎵元素，來增加其能隙，初步上已經達成了，我們藉由XRD繞射圖譜判定鎵元素摻雜造成繞射峰的偏移，由文獻當中的晶格常數與鎵含量關係，得知製程上設定0.3的CuIn1-xGaxSe2，由估算得到0.28~0.29的鎵含量。而CIGSe複晶薄膜的能隙也有明顯的增加，能隙由原本CIS的1eV上升到1.1eV。
藉由銻源瓶分子束通量的含量調變範圍1.1×1013~2.2×1014 atoms/cm2second，希望找出最適合的優化結晶品質的銻元素共蒸鍍時的比例，但在這個部分，我們僅觀察到銻有平整表面，使薄膜緻密的效果。
在探討過程當中，也嘗試將銻元素源瓶中斷供應，讓參與製程的銻元素減少，避免銻在CI(G)S薄膜內部的殘留，於此，我們發現到Sb對於CIGS薄膜內部結晶有很大的影響，在鈉玻璃基板下鍍製的CI(G)S應該是很強的(112)方向從優取向，卻意外造成(220/204)方向從優取向的增強。

The study focus on low temperature process with doping antimony to refine the quality of the CI(G)S thin film, and doping gallium to increase energy band gap in two-stage co-evaporation process. Furthermore, we discuss about the variety of crystal structure, and recognize the value of energy band gap in transmission spectra.
It has been achieved to increase the energy band gap of material with doping gallium. Recognizing the shift of XRD pattern and research result from papers, I estimate the content ratio of gallium in ⅢA atoms is 0.28~0.29, near my establishment ratio 0.3.
By tuning the molecular beam flux of antimony effusion cell from 1.1×1013 atoms/cm2second to 2.2×1014 atoms/cm2second , to find out the property content of antimony involving of co-evaporation to optimize the quality of the CI(G)S polycrystalline thin film. We just observed that the thin film with antimony involving make effect of smoother and denser surface morphology.
In our study, we also try discontinue supplying the antimony vapor to reduce the amount of antimony which involves the reaction process, and make low content of antimony leaved in the CI(G)S thin film. Here, We found out a special effect of the grain- growth of the CI(G)S thin film supplying antimony continually or not in the process. It should be strong (112) prefer orientation when we deposit the thin film using SLG substrate. However, we found out that antimony enhance the (220/204) .

致謝 ii
摘要 iii
Abstract iv
目錄 vi
圖目錄 viii
表目錄 x
第1章 緒論 1
1.1 前言 1
1.2 薄膜材料特性 3
1.2.1CuInSe2複晶薄膜性質 3
1.2.2CuInSe2薄膜太陽電池發展 6
1.2.3CuInSe2以Sb加入製程改良之複晶薄膜性質7
1.2.4以Sb加入旋轉塗佈製程優化CIGS光伏元件表現9
1.2.5Sb加入的對於三階段製程CIGS光伏元件的影響11
1.2.6控制Cu(In,Ga)Se2表面形貌(texture)的研究回顧15
1.3 CIGS元件簡介 17
1.3.1CIGS元件結構 17
第2章 實驗步驟、製程與分析儀器 18
2.1 實驗製程系統 18
2.1.1三吋磁控濺鍍系統 18
2.1.2多源分子束蒸鍍系統 19
2.2 各層薄膜製備 21
2.2.1基板處理 21
2.2.2背電極Mo 21
2.2.3主吸收層CuInSe2 22
2.2.1主吸收層Cu(In,Ga)Se2 23
2.2.2主吸收層Cu(In,Ga)Se2:Sb 24
2.3 薄膜量測分析儀器 25
2.3.1四點探針 26
2.3.2熱探針 26
2.3.3X光繞射分析 27
2.3.4掃描式電子顯微鏡 27
2.3.5穿透/吸收光譜儀 28
2.3.6反射光譜儀 28
第3章 研究方向與實驗設計 29
3.1CuInSe2加入Ga的估算與對其薄膜影響 29
3.2CuInSe2複晶薄膜共蒸鍍製程施以不同Sb的源瓶鍍率30
3.3CuInSe2:Sb複晶薄膜調變Cu/In ratio以觀察其結晶33
3.4Cu(In,Ga)Se2複晶薄膜加入Sb元素 34
第4章 實驗結果與討論 35
4.1CuInSe2複晶薄膜加入Ga元素四源共蒸鍍 35
4.2CuInSe2複晶薄膜共蒸鍍製程施以不同Sb的源瓶鍍率40
4.3Cu(In,Ga)Se2複晶薄膜加入Sb元素 42
4.4Cu(In,Ga)Se2複晶薄膜施以固定Sb源瓶鍍率，調變銅銦比 44
4.5Cu(In,Ga)Se2複晶薄膜放入Sb改變製程改變結晶取向47
第5章 結論 50
第6章 參考文獻 52

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