本研究係利用單元素疊層前驅物進行硒化(selenization)反應合成Cu(In,Ga)Se2(CIGS)。實驗製程為鍍製Cu/Sb/In/Ga/Se元素疊層前驅物，在真空腔體中充滿Se氣氛下由室溫升溫至550 oC持溫反應形成CIGS。XRD、Raman及EPMA成分分析結果發現Ga在此製程沒有摻入形成CIGS。接著嘗試以不同的疊層前驅物製作CIGS測試片發現唯有疊層Cu/In/GaSe/Se疊層前驅物有達到形成CIGS的結果，但還是有2次相產生。根據文獻[27]，發現沒有形成CIGS的原因為在硒化過程中會因相互擴散(interdiffusion)的影響造成先形成三元固態相的情況(CIS+CGS、CIS+Ga…etc.)，而固態相要進行擴散反應將會受到阻礙。
接著改以快速硒化製程製作CIGS測試片，在充滿氮氣的環境下以兩階段快速升溫的方式(在300oC持溫後再升到650oC持溫)形成CIGS。使用此方式原因為升溫速度快可以藉此避免形成三元固相。疊層沿用在Se氣氛下進行硒化製程下最好結果之Cu/In/GaSe/Se前驅物，在固定製程條件下XRD結果(112)繞射峰為26.8o-26.9o，以EPMA成分分析做比對發現Ga實際的量會隨著估計值計算量增加而增加(估計值4atom%實際值2atom%；估計值9.2tom%實際值10atom%，Ga/Ⅲ=0.32)，但組成仍待修正。接著將Sb加入疊層中觀察其對CIGS影響，從SEM結果來看Sb在快速硒化製程下的確有改善CIGS薄膜平整度以及幫助晶粒長大的現象，晶粒大小約1至3μm。

This study is using selenization of stacked elemental layers to form Cu(In,Ga)Se2(CIGS). In the process, use Cu/Sb/In/Ga/Se precursor to heat to 550 oC at Se vapor in vacuum chamber. From the result of XRD、Raman and EPMA, that show of the precursor do not form to CIGS. After that, The result of using different layers precursor to form CIGS show that only Cu/In/GaSe/Se reach to form CIGS, but it still has second phase. According to the literature，the reason for the formation of CIGS selenide process due to interdiffusion caused the formation of ternary solid phase, the solid phase diffusion reaction could be hampered.And then change to use rapid thermal selenization to form CIGS with two step of heating (hold at 300 oC and 650 oC) at N2 atmosphere. The laminated follow the best results in the selenide process Cu/In/GaSe/Se precursors in Se atmosphere, the (112) preferred orientation is 26.8o-26.9o in the XRD results of the fixed process conditions. EPMA composition analysis and comparison of Ga actual amount will increase with the estimated value of the amount of increase(Estimated value 4atom% actual value 2atom%；Estimated value 9.2tom% actual value 10atom%，Ga/Ⅲ=0.32), but the composition has yet to amend. Then will join Sb on CIGS observed from the SEM results Sb does improve the CIGS thin film flatness as well as to help grain growth in rapid thermal selenization, grain size of about 1 to 3μm.

致謝 II
摘要 III
Abstract IV
目錄 V
表目錄 VII
圖目錄 VIII
一、 簡介 1
1.1前言 1
1.2 太陽能電池原理 1
二、 文獻回顧與實驗動機 3
2.1 CIS和CIGS材料特性 3
2.2 CIS製程介紹 8
2.2.1 共蒸鍍法 8
2.2.2 硒化製程 8
2.3 CI(G)S元件結構及各層膜特性 11
2.4實驗動機與目的 13
三、 實驗製程方法與分析儀器介紹 15
3.1 實驗製程系統與原理 15
3.1.1 濺鍍原理 15
3.1.2 磁控濺鍍系統 15
3.1.3 分子束熱蒸鍍系統 16
3.2 元件製作流程 17
3.3 元件各層膜準備作業 18
3.4 實驗流程與步驟 20
3.5分析儀器 20
3.5.1 XRD(X-ray 繞射儀) 20
3.5.2 SEM(掃描式電子顯微鏡) 21
3.5.3 四點探針 21
3.5.4 I-V量測與模擬光源 21
3.5.5 EPMA(電子微探儀) 22
四、 結果與結論 23
4.1 元素疊層前驅物經硒化製程後結果 23
4.1.1 Cu/Sb/In/Ga/Se經硒化反應後結果 23
4.1.2 改變前驅物疊層進行硒化反應結果 26
4.1.3 在Se氣氛下硒化製程結果討論 33
4.2 以元素疊層前驅物進行快速硒化製程結果 34
4.2.1 CIS快速硒化結果 34
4.2.2 CIGS快速硒化結果 36
4.2.3 快速硒化製程CIGS結果討論 46
五、 結論 47
六、 參考文獻 49

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