中文摘要：
本文研究目的著重於利用陰影疊紋術量測半導體構裝體於不同溫溼保存條件下經過IR-reflow後的翹曲變化。因陰影疊紋術適合於試件的位移場量測，有其精確性及非接觸檢測的優點，故非常適合於量測半導體構裝的翹曲量。實驗將針對半導體構裝體PBGA，，於各種不同的溫溼環境下分析半導體構裝體受到IR-reflow後的翹曲狀況。
至於半導體構裝體所受的各種初始溫溼條件，將利用具有調整溫度、溼度的恆溼恆溫設備，進行加溼、去溼的實驗規劃，並且利用高靈敏度的電子天平量測加溼前與加溼後的構裝體重量變化，以判斷半導體構裝體的溫溼狀況，再將含有初始溫溼條件的半導體構裝體利用變溫控制器模擬IR-reflow溫度曲線，以模擬半導體構裝體錫焊或回焊的狀況，再利用陰影疊紋術所獲得的位移場，分析半導體構裝體翹曲量。

Abstract：
The main aim of this paper is to utilizing the Shadow Moirè method to study the moisture effect on the warpage of PBGA IC package under the IR-reflow process.
An environmental controlled box is designed and built. Three combinations of different moisture and temperature status are chosen for the purpose of study. The result shows that the moisture and temperature change do yielding the change of the warpage of the IC package.

誌……………………………………………………………………….I
論文摘要………………………………………………………………...II
目錄……………………………………………………………………...V
圖說明………………………………………………………………...VIII
表說明…………………………………………………………..………XI
符號說明……………………………...………………………………..XII

第一章 緒 論…………………………….……………………………1
1-1 前言……………………….………………………………….1
1-2 文獻回顧………………….………………………………….2
1-3 組織與章節………….……………………………………….3
第二章 陰影疊紋術……………………………………………………4
2-1 前言…………………………………………………………...4
2-2 陰影疊紋術簡介……….……………………………………..5
第三章 實驗規劃及其方法…………………………………………..13
3-1 實驗規劃……………………………………………………13
3-2 實驗儀器簡介………………………………………………13
3-2.1 實驗型恆濕恆溫系統……………………………………..13
3-2.2 IR-reflow的負荷設備…………………………………….14
3-2.3 半導體構裝體夾具………………………………………..15
3-2.4 參考光柵…………………………………………………..15
3-2.5 研究的半導體型式………………………………………..16
3-2.6 光學儀器…………………………………………………..16
3-3 檢測步驟…………………………………………………….17
3-4 實驗驗證…………………………………………………….19
3-4.1 實驗目的…………………………………………………..19
3-4.2 實驗方法…………………………………………………..19
3-4.3 驗證結果…………………………………………………..20
第四章 半導體構裝體溫濕保存條件的量測…………………….….36
4-1 實驗目的與方法…………………………………………….36
4-2 去濕過程………………….…………………………………36
4-3 加濕過程…………………………………………………….37
4-2.1 實驗方法…………………………………………………..37
4-2.2 實驗結果…………………………………………………..38
第五章 PBGA構裝體之量測……………...………………………...46
5-1 實驗目的…………………………………………………….46
5-2 實驗方法…………………………………………………….46
5-3 實驗結果…………………………………………………….46
第六章 結論與展望…………………………………………………..69
6-1 結論…………………………………………………………69
6-2 展望…………………………………………………………69
參考文獻…………….…………………………………………….71

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