在氮基半導體中，氮化銦有最高的電子飄移速度和最小的電子有效質量，氮化銦也被證實其能隙大概為0.6-0.7 eV左右。
最近幾年氮化銦引起大家的興趣，因為其在發光二極體、雷射和高頻元件等領域都有很好的應用。隨著這幾年磊晶技術的進步，電漿輔助分子束系統已可成長出高品質的氮化銦薄膜，但是我們對氮化銦此材料的物理特性還是沒有很清楚的了解。在此次實驗中我們利用電漿輔助分子束系統成長了一系列的矽摻雜氮化銦薄膜，其載子濃度從1.15x1018 cm-3 到1.9x1019 cm-3。本論文中將會對此一系列的氮化銦薄膜去做光致螢光、陰極發光、x-ray繞射、拉曼光譜、電子顯微鏡、霍爾量測等實驗與分析。

Among nitide sremiconductor, InN has the highest electron drift velocity and the smallest effective mass. InN has also been proven to be a narrow band gap semiconductor with a band gap energy of about 0.6-0.7 eV at room temperature.
During the past few years, InN has attracted extensive attention due to is potential applications in semiconductor devices such as light-emitting diodes, lasers, and high efficiency solar cells. With the improvement of growth techniques in recently years, high quality InN films grown by plasma-assisted molecular-beam epitaxy (PAMBE) are now readily available. But there is no explicit knowledge for the physical properties of InN. In our experiment, we grow a serious of Si-doped InN with carrier concentration from 1.15 × 1018 cm-3 to 1.90×1019 cm-3 by PAMBE . In this thesis we will introduce the instrument and describe the characteristics of Si-doped InN by photoluminescence, high-resolution x-ray diffraction, Raman spectroscopy, Scanning Electron Microscopy and cathodoluminescence

Figure List----------------------------------------------------------- (3)
Table List-------------------------------------------------------------(5)
中文摘要----------------------------------------(8)
Abstract---------------------------------------------------------------(9)
Introduction----------------------------------------------------------(7)
Chapter 1 Introduction of MBE and sample growth
1.1 Plasma-assisted molecular beam epitaxy system--------(15)
1.2 Sample preparation ------------------------------------------(18)
1.3 Growth procedure--------------------------------------------(18)
Chapter 2 Introduction of measurements
2.1 Scanning electron microscopy (SEM)------------------(22)
2.2 High resolution X-ray diffraction (HR-XRD)------------(25)
2.3 Hall measurement--------------------------------------------(29)
2.4 Photoluminescence (PL)------------------------------------(34)
2.5 Cathodoluminescence (CL)---------------------------------(38)
2.6 Micro-Raman / Micro-PL-----------------------------------(39)
Chapter 3 Result and Analysis
3.1 SEM-----------------------------------------------------------(45)
3.2 XRD-----------------------------------------------------------(45)
3.3 Hall measurement-------------------------------------------(51)
3.4 Temperature-dependent PL--------------------------------(53)
3.5 Temperature-dependent CL--------------------------------(64)
3.6 Micro-Raman------------------------------------------------(69)
Chapter 4 Conclusion -----------------------------------------(73)
Reference list-------------------------------------------------------(74)

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