以電漿輔助分子束磊晶方式成長20 對的氮化鋁/氮化鎵
分佈式布拉格反射鏡。其在780oC 的溫度及高氮氣電漿流率
的情況底下成長。在成長此20 對的氮化鋁/氮化鎵分佈式布
拉格反射鏡之前，我們先在矽(111)基板上直接成長637 nm
的氮化鎵奈米柱，之後再成長此20 對的氮化鋁/氮化鎵分佈
式布拉格反射鏡。此奈米柱的直徑約80 nm，高度約3.3μm
且其奈米柱密度約為2×1010 cm-2。而其每一層的氮化鋁厚度
約為44 nm，每一層的氮化鎵厚度約為58 nm。厚度對應至
波長為550 nm 的四分之一。在本論文裡以變溫的陰極發光
光譜及影像、掃描式電子顯微鏡、穿透式電子顯微鏡及X 光
繞射儀分析所成長之奈米柱。

20 periods AlN/GaN distributed Bragg reflector (DBR) nanorod structure has been grown on Si (111) substrates at 780℃ by plasma-assisted molecular beam epitaxy (PAMBE) under highly N-rich conditions. The AlN/GaN DRB nanorod structure started with 637 nm high GaN nanorod directly grown on Si (111). Diameter of nanorod is around 80 nm. The height of nanorod is around 3.3 μm, the density of nanorods is around 2×1010 cm-2, and the thickness of each layer are around 44 nm and 58 nm for AlN and GaN, respectively. The nanorod had been analyzed by temperature dependent cathodoluminescence (CL),
scanning electron microscopy (SEM), and transmission electron microscopy (TEM), X-ray diffraction (XRD) measurement.

Contents
Abstract in Chinese (中文摘要)
Abstract
Chapter 1 Introduction 1
Chapter 2 Equipments 6
2.1 Plasma-assisted molecular beam epitaxy (PAMBE) system and reflection high-energy electron diffraction (RHEED) 6
2.2 Scanning electron microscopy (SEM) 9
2.3 Transmission electron microscopy (TEM) 15
2.4 Energy dispersive spectrometry (EDS) 16
2.5 X-ray diffraction (XRD) 18
2.6 Cathodoluminescence (CL) 20
Chapter 3 Experiment Result and Analysis 26
3.1 Sample growth by MBE 26
3.2 Scanning electron microscopy 30
3.3 Transmission electron microscopy and energy dispersive spectrometry 31
3.4 X-ray diffraction 35
3.5 Temperature dependent cathodoluminescence spectra and image mapping 37
Chapter 4 Growth mechanism of nanorods 47
Chapter 5 Conclusion 54
Reference 56
Appendix A The wavelength of electrons with considering
relativistic effect 59
Appendix B Possible growth mechanism of the lateral AlN
layer 61

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