本論文利用在傳統金屬氧化物半導體(MOS)的源極和汲極上方和下方製造出一對共振帶間穿隧二極體RITD(Resonant Interband Tunnel Devices)元件，此結構在製作上是依沉積，蝕刻及側邊技術來完成，製程步驟雖因共振帶間穿隧二極體的製作而略顯繁複，但並不非常困難。此單一金屬氧化物半導體元件，在源極和汲極上方和下方製造出一對共振帶間穿隧二極體，其等效模型可視作一在傳統上需六個電晶體才能完成的靜態隨機存取記憶體(SRAM)，因此無論在體積，成本的考量上都佔優勢，此外因共振帶間穿隧二極體具高速度及低功率，此元件亦能符合靜態隨機存取記憶體要求的特點，又因工作機制的不同，此元件比較傳統靜態隨機存取記憶體，在接線和操作上都較為簡易，亦為其另一優點。
　　本論文將揭示此一元件的製作過程，及解釋其等效電路和工作原理。

This thesis proposes a new architecture, fabricating a pair of RITD (Resonant Interband Tunnel Diode) in the upper and lower position of drain and source terminals of a conventional MOS (Metal oxide Semiconductor), this design is completed by deposition, etching and spacer sequentially, manufacture process is a little complicate due to RITD implementation, but not difficult. This MOS based device, given to a pair of RITD in the upper and lower position of drain and source terminals, its equal model is like a conventional SRAM (Static Random Access Memory) which is completed by six MOS components at least, thus given advantages, like space occupation, cost consideration, still, due to high speed switch and low power consumption of RITD, this device also meet requirement of SRAM, because of different working mechanism, this device is more simple in interconnection and operation than that of a conventional SRAM, it is another improvement.
This thesis will exhibit the manufacture process of this device and its equal circuit mode and working explanation.

英文摘要 ……………………………………………………………………… I
中文摘要 ……………………………………………………………………… II
致謝 ………………………………………………………………………… III
目錄 ………………………………………………………………………… IV
第一章 導論 ……………………………………………………………………… 1
1-1 前言 ………………………………………………………………… 1
1-2 靜態隨機存取記憶體簡介 ……………………………………… 2
1-3 共振帶間穿遂二極體介紹 ………………………………………… 3
1-4 文獻探討 …………………………………………………………… 5
1-5 研究動機 …………………………………………………………… 16
第二章 元件設計與實際製程 …………………………………………………… 18
2-1元件設計與說明……………………………………………………… 18
2-2 元件結構製程 ……………………………………………………… 24
2-3 元件架構特性 ……………………………………………………… 28
第三章 元件模擬比較 …………………………………………………………… 31
3-1防護電壓比較 ……………………………………………………… 31
3-2 消耗功率比較 ……………………………………………………… 33
3-3 製程上的比較 ……………………………………………………… 35
第四章 結論與未來發展 ………………………………………………………… 36
4-1 結論 ………………………………………………………………… 36
4-2 未來發展 …………………………………………………………… 37
參考文獻 …………………………………………………………………………… 38
附件A HSPICE模擬 …………………………………………………………… 40
附件B 完整製程 ………………………………………………………………… 42

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