氧化亞銅在室溫下是一種半導體材料能隙2.17eV，在太陽能電池和量子元件的應用上具有相當的潛力。本論文之實驗主要在於嘗試成長單晶型的氧化亞銅 (Cuprous Oxide, Cu2O)薄膜，並研究其物理特性。實驗以磁控濺鍍法分別成長磊晶Cu2O於R-面(亦即1012-面)取向的氧化鋁 (Al2O3)與(110)-面取向的MgO基板上。研究發現在這兩種基板上氧化亞銅都可以成長出(110)-面取向的Cu2O 磊晶薄膜，實驗指出兩者存有些許的差異性。成長氧化亞銅有濺鍍法、CVD、PLD和MBE等方法，而濺鍍法是這幾種方法成本較低的。
在實驗初期我們嘗試調控不同的成長參數去成長純化學相或純單晶相的氧化亞銅在不同基板上，最後發現最佳生長條件為DC濺鍍功率100W、工作氣體總壓力15mTorr(氬氣與氧氣比例為16:1)、基板溫度650度。並發現成長時間與晶相的關係。相關物理特性探討由下列方式分析X光繞射儀器、掃瞄式電子顯微鏡(SEM)、物理性質量測系統(PPMS)、光致螢光(PL)，本論文將從樣品製備、到X光繞射分析薄膜晶相與品質、SEM薄膜分析表面形貌、PL分析材料能隙與缺陷之間的關係PPMS分析薄膜材料的載子在磁場下的行為作為論文討論的範圍。

Cuprous oxide (Cu2O) was first investigated in the 1920s as a semiconductor material with Eg~2.17 eV. It is ideal for applications in solar cells, electrochromic devices, oxygen and humidity sensors because of its high optical absorption coefficient, non-toxic nature, abundant availability and low cost for production. Many groups have tried different ways to grow the cuprous oxide by, for instance, sputtering, CVD, PLD, MBE, and electro-deposition etc. Among them, the sputtering method is probably the most cost-effective and easy to operate.
In this work, the cuprous oxide thin films were grown on R-Al2O3 and (110)-MgO substrates by DC reactive magnetron sputtering. Thin films grown at different temperatures under various oxygen partial pressures were studied by X-ray diffraction (XRD) to test their structural perfections. Samples with the Cu2O on Al2O3(1012) and MgO(110) were studied via measurement of cathodoluminescence(CL) spectroscopy, photoluminescence (PL) spectroscopy, transmission spectroscopy and magneto transport behaviors. The correlation of growth condition and physical properties are discussed.

論文審定書 I
誌謝 II
摘要 III
ABSTRACT IV
目錄 V
表目錄 VIII
圖目錄 IX
第一章 序論 1
1-1前言 1
1-2文獻回顧 2
1-2-1氧化亞銅(Cu2O)發展進程 2
1-2-2氧化亞銅(Cu2O)性質 3
1-2-3氧化亞銅(Cu2O)的成長 7
1-2-4氧化亞銅(Cu2O)的分析 10
1-3動機與目的 11
1-4 論文架構 12
第二章 實驗儀器及理論基礎 13
2-1濺鍍(SPUTTERING)系統及原理[58] 13
2-1-1 濺鍍系統[59] 13
2-1-2 濺鍍原理 14
2-2 X光繞射儀及原理 16
2-2-1 X-ray由來及應用 16
2-2-2 X-ray 特性及原理 16
2-2-3 X-ray繞射儀簡介及掃描模式 17
2-3 掃描式電子顯微鏡(SCANNING ELECTRON MICROSCOPY, SEM) 23
2-3-1 SEM由來及應用[65] 23
2-3-2 SEM原理簡介 23
2-3-3 CL原理簡介 24
2-4 光致螢光(PHOTOLUMINESCENCE, PL)[66] 25
2-4物理性質量測系統(PPMS) 26
2-4-1 PPMS簡介 26
2-4-2 接觸電阻量測 26
2-4-3霍爾棒(Hall Bar)量測 27
第三章 實驗設計與流程 29
3-1實驗設計 29
3-2成長流程 30
3-1-1基板清洗與前置作業 30
3-2-2薄膜的成長 31
3-2-3薄膜成長參數 31
第四章 實驗結果與分析 34
4-1 XRD分析結果 37
4-1-1 2θ/ω模式 37
4-1-2 GIXRD模式 40
4-1-3 phi scan模式 41
4-1-4 rocking curve模式 44
4-1-5 pole figure模式 45
4-1-5 RSM 46
4-2 SEM分析結果 50
4-3 CL&PL分析結果 53
4-3-1 PL分析結果 53
4-3-2 CL分析結果(CL fitting) 53
4-4 穿透光譜分析結果 55
4-5 HALL量測結果 57
第五章 結論 59
參考文獻 60
附錄A 65
SPUTTER製程步驟 65
附錄B 70
XRD操作(以磊晶薄膜為準) 70
附錄C 76
C-1 XRD量測目的 76
C-2晶格匹配度計算 77
C-3 TLM計算 78
C-4 HALL載子濃度與遷移率計算 79
C-5 KRAMERS–KRONIG RELATIONS計算 81
C-6 GIXRD修正計算 82

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