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博碩士論文 etd-0831109-163028 詳細資訊
Title page for etd-0831109-163028
論文名稱
Title
具反射閘極設計之彎曲平板波微質量感測元件開發
Development of FPW-based Mass Sensing Device with Reflection Grating Electrode Design
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
111
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2009-07-11
繳交日期
Date of Submission
2009-08-31
關鍵字
Keywords
氧化鋅壓電薄膜、質量感測元件、反射閘極、彎曲平板波、交指叉式電極
ZnO piezoelectric thin-film, Reflection grating electrode, Flexural plate wave, Interdigital transducer, Mass-sensing device
統計
Statistics
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中文摘要
傳統免疫分析儀器(如ELISA、CLIA & FPIA)所須試劑用量較高(25 μL/well × 12 well )、檢測較耗時(1~2.5 hr)、儀器體積較大(>10,000 cm3)且價格很高(>10,000 USD);所以有必要開發可即時檢測(<5 min)、試劑用量較少(<15 μL)且攜帶方便之微型免疫感測系統。有鑑於此,本論文利用微機電系統(MEMS)技術以開發一種具反射閘極(Reflection grating electrode, RGE)設計之彎曲平板波(Flexural plate wave, FPW)微型感測元件,以應用在各種生醫檢測微系統之研究與發展。與其他聲波元件相比,FPW元件具有較高的質量靈敏度與較低的操作頻率等優點,其缺點是較容易受雜訊影響。針對此點,本論文將加入RGE結構之設計,並探討其對抑制FPW元件之插入損失與雜訊的影響。
本論文運用面型與體型微加工之MEMS製程技術,完成一種具RGE設計之FPW質量感測元件的開發,該元件體積約為0.189 cm3,其主要製程步驟包括六次黃光微影(Photolithography)與九次薄膜沉積的製程。本論文是以反應式射頻磁控濺鍍法沉積高優質C軸(002)取向的氧化鋅(ZnO)壓電薄膜,並以電子蒸鍍方式沉積交指叉式鉻/金電極(Interdigital transducer, IDT)與RGE鋁電極。為了得到最佳化的設計規格,本論文調變輸入端與輸出端IDTs電極間距、IDT電極對數、延遲線間距(Delay line gap)長度與RGE結構,設計與製作出許多不同尺寸的FPW元件;本論文所設計之元件體積最大為0.189 cm3,最小為0.081 cm3,遠小於傳統免疫量測儀器體積。
在最佳化IDT設計規格下,有RGE結構的FPW感測器比沒有RGE結構的FPW元件,具有較低的中心頻率(2∼4 MHz)、較低的插入損失(-11 dB)以及較低的雜訊(<-30 dB);另外,當測試液體為1 μL的去離子水時,其質量感測靈敏度達-48.3 cm2/g且反應時間僅僅只有5分鐘。以上特性顯示本研究之成果,未來在生醫檢測微系統之研究與發展上具有極高的可應用性。
Abstract
The conventional medical immunoassays (ELISA/CLIA/FPIA) are not only costly (>10,000 USD), large in size (>10,000 cm3), but also require a vast number of sampling (25 μL/well × 12 well) and long detection time (1~2.5 hr). To develop a biomedical microsensor for the application of portable detecting microsystem, this thesis proposes a flexural plate wave (FPW) microsensor with a novel reflection grating electrode (RGE) microstructure. Comparing to the conventional acoustic microsensors, the FPW based device has higher mass sensitivity, lower operation frequency but higher noise level. To overcome this disadvantages, this study added the RGE microstructure into the design of FPW sensor and investigated its influences on the reduction of insertion loss and noise level.
By using the surface and bulk micromachining technologies, this thesis designed and fabricated FPW-based mass-sensing device with a small volume of 0.189 cm3 and a novel RGE microstructure. The main processing steps adopted in this research include six photolithoghaphies and nine thin-film depositions. In this work, a high figure-of-merit C-axial orientation ZnO piezoelectric thin-film was deposited by a commercial magnetic radio-frequency (RF) sputter system. On the other hand, the gold/chrome interdigital transducer (IDT) and RGE aluminum electrode were deposited utilizing a commercial E-beam evaporator system. For the optimization of design specifications of the FPW devices, the space of input and output IDTs, pair number of IDT, length of delay line gap and with/without RGE design were varied and investigated.
Under the optimized IDT specification, the FPW microstructure presents lower central frequency (2∼4 MHz), insertion loss (-11 dB) and noise level (<-30 dB) than that of the FPW based microsensor without RGE microstructure. In addition, as the sampling volume of the testing DI water is equal to 1 μL, a high mass sensitivity (-48.3 cm2/g) and short responding time (5 min) of the FPW microsensor with RGE design can be achieved in this work. The excellent characteristics mentioned above demonstrated the implemented FPW microsensor is very suitable for the applications of portable biomedical detecting microsystems.
目次 Table of Contents
目錄

摘要..……………………………………………………………………. I
Abstract.………………………………………………………...……… III
致謝..………………………………………………………………….... V
目錄..………………………………..………………………………. …VI
圖目錄..……………………………………………………………...… .X
表目錄..…………………………………..………...…...…………….XIV
第一章 緒論……………………………………………………………1
1-1前言………………………………………………………………..1
1-2 研究動機與目的……………………………………………….…4
1-3 文獻回顧……………………………………………………….…6
1-3-1 剪應力(Thickness shear mode, TSM)震盪器……………….6
1-3-2 表面聲波(Surface Acoustic Wave, SAW)感測器………...…7
1-3-3 剪力水平板波(Shear Horizontal Acoustic Plate
Mode, SH-APM)感測器……………………………………8
1-3-4 彎曲平板波(Flexural Plate Wave, FPW)感測器……………9
第二章 彎曲平板波感測器感測理論與反射閘極原理……………..15
2-1 彎曲平板波質量感測之理論推導……………………………...15
2-1-1 彎曲平板波無液體質量負載下之相速度理論推導……...16
2-1-2 彎曲平板波於非黏滯性液體質量負載下之平板波
相速度、質量敏感度以及頻率飄移量之理論推導………..18
2-1-3 彎曲平板波於黏滯性液體質量負載下相速度之理
論推導……………………..……………………………..…20
2-1-4 本論文之彎曲平板波感測器相速度與中心頻率之
計算…………………………………………………………20
2-1-5彎曲平板波感測器於負載去離子水之中心頻率偏
移量計算……………………………………………………23
2-2 壓電效應與壓電薄膜選擇…………………………………...…24
2-3 反射閘極理論………………………………………………...…27
2-3-1反射閘極電性…………………………………………….…27
2-3-2 反射閘極週期…………………………………………...…29
2-3-3 反射閘極對數………………………………………...……30
2-3-4 反射閘極與交指叉式電極間延遲距離之關係…………...30
第三章 具反射閘極之彎曲平板波感測器之設計與實驗方法………32
3-1具反射閘極彎曲平板波感測器之設計…………………………32
3-1-1 底電極圖形之設計規範…………………………………...34
3-1-2 氧化鋅薄膜圖形之設計規範……………………...………34
3-1-3 交指叉式電極圖形之設計規範…………………...………34
3-1-4 反射閘極圖形之設計規範……………………………...…39
3-1-5 背蝕刻孔圖形之設計規範………………………………...39
3-1-6 電化學蝕刻停止接觸電極圖形之設計規範……………...40
3-2 具反射閘極之彎曲平板波感測器製作流程…………………...41
3-2-1 製作流程………………………………………………...…41
3-2-2製作方法與製程參數…………………………………….…43
3-3 彎曲平板波感測器頻率擷取電路的設計……………………...55
3-3-1 混波降頻電路……………………………………………...56
3-3-2 中頻信號放大器…………………………………………...57
3-3-3 正弦波類比信號轉電晶體邏輯電路
(Transistor-transistor logic, TTL)位準電路……………......57
3-3-4 除頻電路…………………………………………………...57
第四章 實驗結果與討論…………………………………………..…59
4-1 具反射閘極之彎曲平板波感測器結構分析…………………...59
4-1-1 氧化鋅壓電薄膜表面結構……………………………...…59
4-1-2 交指叉式電極結構……………………………………...…61
4-1-3 反射閘極結構……………………………………………...63
4-1-4 背後矽蝕刻製程與晶片完成結果圖……………………...66
4-2 彎曲平板波感測器探針量測結果與分析…………………...…67
4-2-1 FPW感測器探針式量測平台簡介……………….……...…67
4-2-2 FPW感測器探針式量測平台結果比較與討論……………68
4-3 彎曲平板波感測器去離子水量測結果與分析……………...…74
4-4 頻率感測電路板的模擬結果…………………………………...79
第五章 結論及未來之展望………………………………………..…81
參考文獻………………………………………………………………..83
附錄……………………………………………………………………..86
參考文獻 References
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