FIB 是目前台灣學術界製作100nm 以下結構的有效又經濟方法。過去的FIB 奈米製造的圖案還不理想，本研究以二次沉積遮罩層來改善奈米結構輪廓垂直度。單一遮罩層用以圖案轉移，蝕刻過程中，可能因參數設定不當或是機台限制等因素，導致轉移的圖案變形，最常見的情況是，頂部呈現尖突狀，側壁傾角過大而不垂直，為了改善上列情況，實驗設計多沉積一層遮罩層保護側壁，以減緩側壁蝕刻。
機台使用上是以濺鍍機台沉積第一層遮罩層鉻，以聚焦離子束直寫蝕刻圖案於其上，蝕刻的地方裸露出下層的矽，再以濺鍍機台沉積第二層遮罩層：二氧化矽，二氧化矽層直接於表面輪廓覆蓋上去，再以感應耦合式電漿機台蝕垂直蝕刻掉二氧化矽層的頂部及底部，結構側壁的二氧化矽則被保留下來保護側壁及提高深寬比。最後再同樣以感應耦合式電漿機台蝕刻矽，這一部分探討到蝕刻氣體的差異，將氯基及氟基氣體蝕刻的差異性作一個比較。參數最佳化後，成功\進行線寬61nm 深度310nm 之奈米結構的製造。

FIB is currently the economic methods to produce nano-structure below 100nm. In the past, FIB manufactures nano-structure patterns also unsatisfactory. In this study, the influence of twice deposited mask layer on the aspect ratio of nano-structure and verticality of side wall contour was discussed. The single mask layer is used for pattern transfer. Pattern distortion may occur during etching due to several factors like improper parameter setting, limitation of machine table, etc. The most common situations are aciculate and salient shape on the top and angle of slope which is too big to be vertical. In order to improve above-mentioned situations, a mask layer of multi-deposition was designed to protect the side wall so that it could retard etching. In addition to modifying verticality of side wall, the aspect ratio could be raised indirectly because the second deposition had reduced the interval between patterns. In the aspect of using machine table, the first mask layer, chromium, which was deposited by the sputtering machine. And the etching pattern was directly written on the first mask layer by focused ion beam. The silicon was uncovered at etched place, and then the second mask layer, silica (SiO2), which was deposited by the sputtering machine. The surface contour was directly covered with silica layer. Right after that, the top and bottom of silica were removed through vertical etching by inductively coupled plasma machine. The silica on the side wall of structure was retained to protect the side wall and raise aspect ratio. Eventually, the silicon was etched by the same way of inductively coupled plasma machine that it was researched on the difference in etching gas. And there was a comparison between chlorine and fluorine gases. After optimizing parameters, the nano-structure was made under 100nm.

目錄
誌謝 I
目錄 II
表目錄 V
圖目錄 VII
中文摘要 XII
英文摘要 XIII
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 2
1-3 研究動機與目的 12
第二章 實驗原理及儀器介紹 14
2-1 多靶磁控濺鍍系統 14
2-1.1 機台架構、功能與特性 14
2-1.2 工作原理 17
2-1.3 工作機制 18
2-1.4 參數意義 19
2-2 聚焦離子束技術 20
2-2.1 機台架構、功能與特性 20
2-2.2 工作原理 24
2-2.3 工作機制 25
2-2.4 參數意義 26
2-3 感應耦合式電漿蝕刻系統 28
2-3.1 機台架構、功能與特性 28
2-3.2 工作原理 29
2-3.3 工作機制 29
2-3.4 參數意義 30
第三章 實驗設計 34
3-1 實驗簡介 34
3-2 實驗流程 35
3-3 實驗說明 36
第四章 實驗結果與討論 38
4-1 濺鍍製程參數的影響 38
4-2 二次沉積對結構深寬比及垂直度之影響 40
4-3 蝕刻氣體：氟基與氯基的比較 40
4-4 參數最佳化 41
第五章 結論與未來展望 75
參考文獻 76

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