我們用電漿輔助分子束磊晶成長氮化銦薄膜於100面的鋰酸鋁基板上。薄膜的結構性質可用高能反射式電子繞射儀、X光繞射儀、掃描式電子顯微鏡、原子力顯微鏡和穿透式電子顯微鏡來觀察。X光的繞射結果顯示出氮化銦薄膜的成長方向為非極性的m方向 (11 ‾00) 。此外，在掃描式電子顯微鏡下的氮化銦薄膜有著條狀的表面形貌，而此條狀結構沿著[112 ‾0] 方向。光學性質由光致螢光、陰極發光及拉曼散射三種量測技術來解析。光致螢光及陰極發光的結果告訴我們氮化銦薄膜的螢光峰值能量大約為0.65 eV。載子濃度則由霍爾量測得知。

InN thin films were grown on γ-LiAlO2 (100) by plasma-assisted molecular-beam epitaxy (PAMBE). Structural properties were investigated by reflective high-energy
electron diffraction (RHEED), x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). XRD measurements showed that the crystal orientation of InN films was non-polar m-plane (11 ‾00). In addition, from SEM images, a striped morphology was observed along
[112 ‾0]. Optical properties were characterized by photoluminescence (PL) spectroscopy, cathodoluminescence (CL) spectroscopy and micro-Raman scattering. Both CL/PL
results revealed that InN films have a luminescence-emission peak-energy of about 0.65 eV. Carrier concentration had been determined by Hall measurements.

摘要
第一章 導論與文獻回顧 - 1 -
1.1 氮化銦的重要物理特性 - 1 -
1.2 氮化銦的成長 - 2 -
1.3 成長氮化銦的基板 - 2 -
1.4 氮化銦的電性和光學性質 - 3 -
第二章 儀器原理與介紹 - 5 -
2.1 分子束磊晶成長系統 - 5 -
2.2 特性分析儀器 - 6 -
2.2.1 掃描式電子顯微鏡 - 6 -
2.2.2 光致螢光 / 陰極發光 - 7 -
2.2.3 Ｘ光繞射儀 - 8 -
2.2.4 拉曼散射 - 9 -
2.2.5 高能反射式電子繞射儀 - 10 -
2.2.6 穿透式電子顯微鏡 - 11 -
2.3 製程儀器 - 13 -
2.3.1 電子束蒸鍍系統 - 13 -
2.3.2 微影系統 - 13 -
2.3.3 蝕刻 - 14 -
2.3.4 聚焦電子束系統[25] - 15 -
2.4 霍爾效應[27] - 17 -
2.4.1 Van der Pauw四點量測法 - 19 -
2.4.2 Hall bar六點量測法 - 20 -
第三章 實驗流程 - 24 -
3.1 薄膜成長 - 24 -
3.2 特性分析 - 25 -
3.2.1 陰極發光 - 25 -
3.2.2 Ｘ光繞射 - 26 -
3.3 霍爾樣品製作 - 27 -
3.4 霍爾量測 - 29 -
第四章 實驗結果與討論 - 32 -
4.1 樣品成長參數 - 32 -
4.2 高能反射式電子繞射儀 - 34 -
4.3 Ｘ光繞射 - 35 -
4.4 拉曼光譜 - 42 -
4.5 掃描式電子顯微鏡 - 43 -
4.6 穿透式電子顯微鏡 - 47 -
4.7 光致螢光/陰極發光 - 51 -
4.8 霍爾量測 - 59 -
第五章 結論與未來展望 - 64 -
Reference - 65 -
Appendix 1 C-V計算 - 67 -

[1] J. Wu et al., Appl. Phys. Lett. 80, 3967 (2002)
[2] T. L. Tansley et al., J. Appl. Phys. 59, 3241 (1986)
[3] S. N. Mohammad et al., Prog. Quantum Electron. 20, 361 (1996)
[4]E. Bellotti et al., J. Appl. Phys. 85, 916 (1999)
[5] B. E. Foutz et al., J. Appl. Phys. 85, 7727 (1999)
[6] H. J. Hovel et al., Appl. Phys. Lett. 20, 71 (1972)
[7]T. L. Tansley et al., Electron. Lett. 20, 1066 (1984)
[8] A. Wakahara et al., Appl. Phys. Lett 54, 709 (1989)
[9] A. Yamamoto et al., Phys. Status Solidi A 194, 510 (2002)
[10] W. Walukiewicz et al., J. Crystal. Growth. 269, 119 (2004)
[11] H. Lu et al., Appl. Phys. Lett. 79, 1489 (2001)
[12] Y. F. Ng et al., Appl. Phys. Lett. 81, 3960 (2002)
[13] P. Waltereit et al., Phys. stat. sol. (a) 180, 133 (2000)
[14] P. Waltereit et al., J. Crystal Growth 218, 143 (2000)
[15] T. L. Tansley et al., Phys. Rev. B 45, 10942 (1992)
[16] W. J. Schaff et al., Proceeding of the seventeenth conference on advanced concepts in high performance devices, 2000, p. 225
[17] V. Y. Davydov et al., Phys. Status. Solidi B 234, 787 (2002)
[18] D. W. Jenkins et al., Phys. Rev B 39, 3317 (1989)
[19] Veeco Applied EPI 930 Instruction Manual
[20] 汪建民, 材料分析, 1998 中國材料科學學會
[21] Kittel Charles, Introduction To Solid State Physics 8th Edition, 2005 John Wiley &Sons Ltd.
[22] M. A. Herman H. Sitter, Molecular beam epitaxy 2nd Edition, 1996 Springer-Verlag Berlin Heidelberg.
[23] 鮑忠興講述, 劉思謙整理, TEM理論與實務.
[24] S. M. Sze, Semiconductor Devices Physics Technology 2nd Edition, 2002 John Wiley &Sons Ltd.
[25] http://www.fibman.idv.tw/fib/index.html
[26] SMI3050SE FIB-SEM Hybrid System Instruction Manual
[27] K. Schroder, Semiconductor material and device characterization 3rd Edition, 2006 John Wiley &Sons Ltd.
[28] David C. Look, Electrical Characterization of GaAs Materials and Devices, 1989 John Wiley &Sons Ltd.
[29] H. Shinoda et al., Thin Solid Films 476, 276 (2005)
[30] V. Y. Davydov et al., Phys. Status Solidi B 229, R1 (2002)
[31] K. Kubota et al., J. Appl. Phys. 66, 2984 (1989)
[32] Pierre Ruterana et al., Nitride Semicondutors: Handbook on Materials and Devices, 2003 John Wiley &Sons Ltd.