化學氣相沈積法技術常被用來當作是晶圓面板代工的一種製程，而在其基板上表面之熱傳性能可是製程中很重要的影響參數，因此本論文應用了液晶熱傳量測的技術，建立起暫態液晶熱傳量測實驗方法系統並運用模擬化學氣相沈積過程技術-於矩型腔體內使用低速空氣噴流通過噴嘴偏心板出口衝擊到矩形傾斜角度基板之熱傳實驗研究分析。最後，實驗結果經由回歸分析之後，將可推導出紐賽數(Nu)與雷諾數(Re)、分離距(H/D)、矩形傾斜基板角度(θ)三者關係之間的熱傳係數實驗公式。

Chemical vapor deposition technology is often by using in the one of Wafer panel Foundry process, the heat transfer coefficient on the top substrate surface is the very important influence parameter in the manufacturing process. For this reason, the main object of this thesis is apply liquid crystals heat transfer measurement technique to set up a temperature measurement experiment system of transient thermochromatic liquid crystals and application simulating CVD process technique. Furthermore, an experimental is carried out in the present study to investigate the characteristics of heat transfer experiment study analysis resulting from a low speed air jet through the nozzle eccentric disc outlet impinging onto a rectangular acclivitous angles substrate confined in a vertical rectangular chamber. Finally, heat transfer coefficient empirical equations of the three relationship are proposed to Nusselt number correlate the effect of Reynolds number、Separation distances are Ratio of outlet and acclivitous substrate surface、Angles of rectangular acclivitous substrate.

目錄
表目錄 II
圖目錄 III
學術用語 VI
摘要 VIII
章節 頁數
第一章 前言 1
1-1 研究背景和動機 1
1-2 文獻回顧 4
1-3 研究重點 9
第二章 實驗相關方法和其理論 11
2-1 液晶量測技術及其基本理論 11
2-2 實驗規劃 18
第三章 實驗裝置及實驗步驟 20
3-1 實驗設備 20
3-2 實驗前置作業準備 25
3-3 實驗步驟 27
第四章 結果與討論 30
4-1 雷諾數對熱傳的影響 31
4-2 分離距對熱傳的影響 32
4-3 矩形傾斜基板角度對熱傳的影響 33
4-4 熱傳實驗公式 34
第五章 結論 36
參考文獻 83
附錄A 86
表目錄
表1. 實驗測試之無因次範圍 38
圖目錄
圖1. 化學氣相沈積成膜示意圖 39
圖2. 膽固醇型液晶分子排列方式圖 40
圖3. 半無窮區間其一維暫態熱傳導系統圖 41
圖4. 進氣口溫度曲線 42
圖5. 流體衝擊基板和部份尺寸參數示意圖 43
圖6. 實驗系統架構圖 44
圖7. 噴嘴整體示意圖 45
圖8. 氣體到達基板上表面時間示意圖 46
圖9. 噴嘴整流區段測溫點示意圖 47
圖10. 噴嘴整體及腔體實際照片圖 48
圖11. 加熱器及質量流率控制器實際照片圖 49
圖12. 實驗傾斜基板示意圖 50
圖13. 偏心出口板示意圖 51
圖14. 噴嘴零件示意圖(a)(b) 52
圖15. 實驗傾斜基板支撐座示意圖 53
圖16. 實驗矩形垂直腔體示意圖 54
圖17. 光場配置與影像擷取示意圖 55
圖18. 液晶達至最大綠色光強度時的溫度校正圖 56
圖19-1 熱對流係數分佈圖（θ=3 ,Re=114 ,H/D=0.176~0.441） 57
圖19-2 熱對流係數分佈圖（θ=3 ,Re=139 ,H/D=0.176~0.441） 58
圖19-3 熱對流係數分佈圖（θ=3 ,Re=164 ,H/D=0.176~0.441） 59
圖19-4 熱對流係數分佈圖（θ=6 ,Re=114 ,H/D=0.176~0.441） 60
圖19-5 熱對流係數分佈圖（θ=6 ,Re=139 ,H/D=0.176~0.441） 61
圖19-6 熱對流係數分佈圖（θ=6 ,Re=164 ,H/D=0.176~0.441） 62
圖19-7 熱對流係數分佈圖（θ=10 ,Re=114 ,H/D=0.176~0.441） 63
圖19-8 熱對流係數分佈圖（θ=10 ,Re=139 ,H/D=0.176~0.441） 64
圖19-9 熱對流係數分佈圖（θ=10 ,Re=164 ,H/D=0.176~0.441） 65
圖20-1 Re對熱流場的影響
(a) =0.176 (b) =0.265 66
圖20-2 Re對熱流場的影響
(c) =0.353 (d) =0.441 67
圖21-1 θ對熱流場的影響
(a) =0.176 (b) =0.265 68
圖21-2 θ對熱流場的影響
(c) =0.353 (d) =0.441 69
圖22-1 Re=114時，平均熱對流係數於不同基板角度中隨著分離距增加的變化情形 70
圖22-2 Re=139時，平均熱對流係數於不同基板角度中隨著分離距增加的變化情形 71
圖22-3 Re=164時，平均熱對流係數於不同基板角度中隨著分離距增加的變化情形 72
圖23-1 Re=114時，平均紐賽數 於不同基板角度中隨著分離距增加的變化情形 73
圖23-2 Re=139時，平均紐賽數 於不同基板角度中隨著分離距增加的變化情形 74
圖23-3 Re=164時，平均紐賽數 於不同基板角度中隨著分離距增加的變化情形 75
圖24-1 θ=3時，平均紐賽數 於不同雷諾數(Re)中隨著分離距增加的變化情形 76
圖24-2 θ=6時，平均紐賽數 於不同雷諾數(Re)中隨著分離距增加的變化情形 77
圖24-3 θ=10時，平均紐賽數 於不同雷諾數(Re)中隨著分離距增加的變化情形 78
圖25-1 實驗與線性迴歸結果關係圖(3度基板) 79
圖25-2 實驗與線性迴歸結果關係圖(6度基板) 80
圖25-3 實驗與線性迴歸結果關係圖(10度基板) 81
圖25-4 實驗與線性迴歸結果關係圖(所有角度基板) 82

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