本論文探討以快速硒化方法製備CuInSe2薄膜及其太陽能電池元件其結構如：SLG/Mo/p-CuInSe2/CdS/i-ZnO/ZnO:Al為目標，其過程面對較多挑戰為各層薄膜均勻度上，與其製程均勻性與穩定性的控制。
其主要探討方向在金屬前驅物製備方面，利用降低濺鍍瓦數至power density 在2w/cm2以下，濺鍍時間不超過10分鐘，並利用靶材與加強冷卻方式，可明顯改善In表面均勻性，並克服In原子再結晶造成硒化後薄膜表面均勻性不佳的問題，而實驗證明金屬前驅物平坦度與硒化後平坦度十分相關；而在RTP硒化製程方面，先將金屬前驅物經過250˚c 二十分鐘的熱處理後使銅銦合金化，其硒化形成的CuInSe2 薄膜表面色澤均勻度較佳，推測為一反應較完全所致；而利用以2˚c/s由室溫升至250˚c，持溫5分鐘，以1˚c/s由250˚c升至550˚c，持溫5分鐘的升溫曲線，可有效改善RTP過程中快速升溫造成之薄膜剝落問題，由以上製程可成功化合形成電阻率約為0.3~0.4Ω-cm 之p-CuInSe2薄膜。
在36 cm2面積的玻璃基板上，在AM 1.5模擬光源照射下，量測可得7點各點照光面積約為0.21cm2 的uni-cell，其Voc可達0.18V，Jsc為4.05 mA，填充因子約為33.7%，其效率均勻性約為8.65%之單一元件。

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內容目錄
摘 要 I
內容目錄 II
第一章 簡介 1
1.1前言 1
1.2薄膜太陽電池現今發展概況 2
1.3 複晶CuInSe2薄膜太陽能電池之薄膜性質 3
1.4 CuInSe2製程方式 9
1.5太陽能電池運作原理 12
1.6 元件結構設計分析與探討 14
1.6.1 元件結構設計 14
1.6.2 各層薄膜之需求與功能要求 15
第二章 文獻回顧 18
2.1 太陽電池的歷史背景與現今發展概況 18
2.2 以硒化方式成長CuInSe2 薄膜太陽能電池發展 18
2.3 研究目的與動機 20
第三章 實驗成長設備與分析儀器 21
3.1 薄膜成長儀器設備 21
3.1.1 磁控濺鍍系統 21
3.1.2 分子束蒸鍍系統 21
3.1.3 快速熱處理(rapid thermo process, RTA) 22
3.2 薄膜特性分析方法及儀器 23
3.2.1 X-ray 繞射儀(X-ray diffraction) 23
3.2.2 掃描式電子顯微鏡(SEM) 23
3.2.3 a-step 量測 24
3.2.4 四點探針(Four-point probe) 24
3.2.5 熱探針量測(Hot probe) 24
3.2.6 吸收光譜儀(UV/NIR/VIS) 25
3.2.7 反射光譜儀(Spectral reflectance measurement) 25
3.2.8 電流-電壓特性量測(I-V) 26
第四章 實驗步驟 27
4.1 元件製造方法流程與步驟 27
4.2 元件製造步驟 28
4.2.1 基板準備 28
4.2.2. 鉬金屬(Mo)背電極製備 29
4.2.3. 二硒化銅銦(CuInSe2)主吸收層之鍍製 29
4.2.4. 硫化鎘(CdS)緩衝層鍍製 31
4.2.5. 透明導電膜(ZnO：Al)透光層及抗反射層鍍製 31
4.2.6. 薄膜均勻度測試 32
第五章 實驗結果與討論 33
5.1 Mo背電極製備與結果討論 33
5.2 以硒化法製備CuInSe2主吸收層與結果討論 34
5.3 較佳均勻性金屬前驅物銦(In)薄膜之鍍製 37
5.4 製作金屬前驅物(metal precursor) 40
5.5 利用RTA進行快速熱處理硒化製程與結果分析 46
5.6 金屬前驅物與不同條件下硒化後CuInSe2薄膜形貌之比較 54
5.7 CdS緩衝層之鍍製 60
5.8 外窗層i-ZnO與ZnO:Al(AZO)之鍍製 : 61
5.9 元件之製作與轉換效率量測 62
第六章 結論 67
第七章 參考文獻 69

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