氮化銦具有不同於一般半導體的獨特電性與表面性質，我們針對其表面性質進行研
究。在本文中透過歐傑電子能譜分析儀、低能量電子繞射儀、掃描式電子顯微鏡與
掃描式穿隧電子顯微鏡來觀察氮化銦表面的特性。
在清理樣品表面的方式上，採用了氯化氫清洗樣品表面、氫原子清理法與直接對
樣品退火。氫原子清理法是比較三者的結果後最適合的方法，其有效移除表面的氧
與碳；氯化氫是在大氣中進行，因此其變數較多，因此無法很好的清理樣品表面。
雖然此作法是最容易進行的方式，但卻有其不確定性。而對樣品退火主要目的是期
待樣品表面原子獲得較佳的動能以移動到較洽當的晶格位置。
進行氫原子清理時會同時對樣品加熱，因此也會有與退火相同的效果，所以以適
當條件下的氫原子清理後，可以在低能量電子繞射儀中清楚觀察到樣品的繞射點。
在歐傑電子能譜的結果顯示，氫原子清理法可以有效移除表面的碳與氧的吸附物，
因此在清理樣品表面的方法中，以氫原子清理法最為適當。在得到乾淨的氮化銦表
面後，接下來要我們將透過STM 進行研究其表面電子堆積造成的影響。
v

InN have individual property of electrnic and surface, our research is focused on
the surface property. In this article, The surface property was studied by Auger
Electron Spectroscopy (AES), Low Energy Electron Diffraction(LEED), Scanning
Electron Microscope(SEM), and Scanning Tunneling Microscopy(STM).
The method in this article for cleaning surface of InN are wet etching by HCl,
Atomic Hydrogen Cleaning(AHC), and annealing. Wet etching by HCl was proceeding
in air, and a lot of junk would be adsorbed in the surface of InN when it
was taken from HCl to vacuum. Though wet etching was a simple method,
it could not be a best method to clean surface of InN. AHC were a relative
clean method in this article. Carbon and oxygen colud be removed effectively
by AHC.The filament of AHC was heating the surface of InN when AHC was
running, so the surface was annealing at that moment. After cleaning by AHC,
LEED spot and AES signal were improved.

1 簡介1
1.1 氮化銦的簡介. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1.1 氮化銦的結構. . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 氮化銦表面研究. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 實驗方法與儀器7
2.1 實驗方法. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 真空系統. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2.1 超高真空. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2.2 真空計. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.2.3 真空幫浦. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.2.4 真空熱處理系統. . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3 分子束磊晶(MBE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.4 歐傑電子能譜分析儀(AES) . . . . . . . . . . . . . . . . . . . . . . . . 19
2.5 低能量電子繞射儀(LEED) . . . . . . . . . . . . . . . . . . . . . . . . 21
2.6 掃描式電子穿隧顯微鏡(STM) . . . . . . . . . . . . . . . . . . . . . . . 23
2.6.1 電子穿隧效應. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.6.2 成像原理. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2.6.3 STM 掃描技術簡介. . . . . . . . . . . . . . . . . . . . . . . . 25
3 實驗結果27
3.1 曝於大氣後的氮化銦表面. . . . . . . . . . . . . . . . . . . . . . . . . 27
3.2 經過熱處理的氮化銦結果. . . . . . . . . . . . . . . . . . . . . . . . . 36
3.3 氯化氫清洗過後的結果. . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.4 經過氫原子清理法的氮化銦表面. . . . . . . . . . . . . . . . . . . . . 43
4 實驗結果討論51
4.1 歐傑電子能譜分析儀結果討論. . . . . . . . . . . . . . . . . . . . . . 51
4.2 低能量電子繞射儀結果討論. . . . . . . . . . . . . . . . . . . . . . . . 52
4.3 表面銦過剩(In rich) . . . . . . . . . . . . . . . . . . . . . . . . 53
5 結論. . . . . . . . . . . . . . . . . . . . . . . . 55
A 金遭到少量污染的的STM 影像. . . . . . . . . . . . . . . . . . . . . . . . 57
B 歐傑電子能譜對照. . . . . . . . . . . . . . . . . . . . . . . . 61
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