Title page for etd-0902114-033450


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URN etd-0902114-033450
Author Kuan-Chang Chang
Author's Email Address No Public.
Statistics This thesis had been viewed 5577 times. Download 21 times.
Department Materials and Optoelectronic Science
Year 2014
Semester 1
Degree Ph.D.
Type of Document
Language English
Title Study on Supercritical Fluids and Resistance Random Access Memory
Date of Defense 2014-09-24
Page Count 120
Keyword
  • Silicon oxide
  • Metal doping
  • Supercritical CO2 fluids
  • Graphene oxide
  • RRAM
  • Abstract In this dissertation, we first provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. To investigate the physical mechanisms, we focus on materials, device structures, and treatment methods to provide an in-depth understanding of the state-of-the art oxide based RRAM. On the materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide doped metal technology to be introduced into the industry. Furthermore, the multilayer stacked configuration of metal-doped silicon oxide is investigated for RRAM applications. We find that the operation current of RRAM can be effectively reduced and the performance of RRAM can also be improved. Based on that, double-ended graphene oxide doped silicon oxide based via-structure RRAM with filament self-aligning formation and self-current limiting operation ability is demonstrated. The device exhibits outstanding performance including high switching speed (~30ns) at low operation voltage, long endurance property (>1012 cycles), and read disturbance immunity (>1010 cycles), reasonable retention (>104s at 125 ̊C), and multilevel memorial state. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. In addition, we have also adopted a new concept of supercritical CO2 fluid treatment to carry the supercritical water with high oxidizing ability into the resistive switching layer to efficiently reduce the operation current of RRAM devices for portable electronic applications. The characteristics of RRAM with ITO electrode can be verified by electrical measurement approach. We find that the resistance switching will take place in ITO electrode, from which the lower operating voltage and current can be achieved to effectively reduce the operating power of RRAM device. Finally, lithium silicon oxide (LiSiOx) RRAM component is used to simulate synaptic plasticity of neurons to imitate learning mechanism of neuron synapse. We demonstrate some important bionic features for the memory in the brain of animal, such as the significant features of spike time-dependent plasticity (STDP) for Hibernia learning (Hebb's learning), the properties of short-term memory (STM), and long-term memory (LTM).
    Advisory Committee
  • Chih-Ching Huang - chair
  • S. M. Sze - co-chair
  • Wei-Hung Su - co-chair
  • Jung-Hui Chen - co-chair
  • Ying-Chung Chen - co-chair
  • Tsung-Ming Tsai - advisor
  • Files
  • etd-0902114-033450.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2014-10-02

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