本論文主要目的為應用半導體蝕刻製程技術，於六吋P型矽基板上，作為導光板之翻鑄模仁。在基板上成長鉻金屬為保護材料，經過光微影術及濕蝕刻的圖形轉移(pattern transfer)，再以電漿蝕刻製程，刻畫出特殊的幾何形狀結構。改變不同蝕刻功率作截面圖形之比較，以作為翻模之參考。
另一項目的為製作連接光纖及定位校準用之V型凹槽模具。將於矽基板兩面以磁控式濺鍍法，濺鍍Ta2O5作為保護材料，以110℃的EDP溶液蝕刻V型凹槽及連接之平台，其底蝕為2.5~3mm。另外用熱蒸鍍的方式，以溫度1050 oC，成長厚度約2500Å的二氧化矽(SiO2) 作為保護材料，以110℃的EDP溶液蝕刻，其底蝕為2.25 mm，並有較佳之蝕刻結果。

The objective of this thesis is to apply semiconductor etching process technologies on 6 inch P-type Si substrate and produce a mold of Light Guiding Plate (LGP). After evaporate chromium (Cr) onto the Si substrate as etch mask, the thin films were then patterned and subsequently etch by plasma. Different powers were used to compare the cross-sections of the patterns. The results would be the references of Si molding process.
Another objective is to fabricate Si-V grooves which can connect the fibers and accurately position fibers. Anisotropic etching of Si-V grooves were formed using EDP solution, and sputtered Ta2O5 was used as the etch mask. At a etching temperature of 1100C, the under cut is 2.5~3mm . Additionally using SiO2 as etch mask by thermo evaporation at 1050℃ .Use EDP solution at 1100C, the under cut is 2.25mm which had a better result.

第一章 導論 1
第二章 基礎理論 6
第一節 基礎光學理論 6
第二節 溼蝕刻原理 8
第三節 非等向濕蝕刻的基礎 10
第3-1節 廣義非等向性蝕刻機制 10
第3-2節 化學蝕刻機制 12
第3-3節 物理解釋 13
第三章 Si-molding製程 15
第一節 製程流程 15
第二節 製程討論 25
第四章 Si V-grooves製程 27
第一節 以SiO2作為保護材料之製作流程 27
第二節 以Ta2O5作為保護材料之製作流程 33
第五章 實驗結果與討論 38
第一節 Si-molding製程結果與討論 38
第二節 Si V-grooves製程結果與討論 44
第六章 結論 52

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