本論文運用面型微加工(Surface micromachining)技術設計並製作具高絕緣特性之射頻微機電切換器(RF-MEMS switch)，以期能應用於S-Band(1-4.5 GHz)之無線通訊系統。
本研究針對靜電式微切換器進行結構設計、模擬高頻特性、元件製程整合與高頻特性量測分析，其中為了使元件具高絕緣、低損耗、低驅動電壓之特性、本論文提出以下三種方法：(i)調變傳輸線的間距與寬度以提升元件高頻特性； (ii) 採用雙金屬複合上電極，運用其應力不平衡現象形成拱型接觸電極並有效降低驅動電壓；(iii)採用不等長式彈簧結構以使元件上電極作動之平穩性增加。此外，本論文輔以高頻電磁模擬軟體(Ansoft-HFSS and ADS)針對上述不同結構設計之微切換器進行最佳化模擬分析。
本論文所設計開發之最佳化射頻微切換器之尺寸僅有145 μm× 205 μm，該元件由開狀態(On-state)切換至關狀態(Off-state)所需驅動電壓僅只有36.5 V；經由商用網路分析儀於頻段(1-4.5GHz)之結果顯示，該元件在關狀態的絕緣度高達-57.721 dB，而開狀態的插入損耗為-1.625 dB。

In order to apply to S-Band (1-4.5 GHz) of wireless communication system, we designed and fabricated a high-insolating RF-MEMS switch by surface micromachining technology in this study.
In terms of the micro switch, we performed the structural design, high frequency simulation, components process integration and high-frequency measurement in this study. Especially for making components be high-isolation, low-loss and low-driving voltage, we proposed the following three methods: (i) adjusting the space and width of the transmission lines to improve the RF performance; (ii) applying the stress imbalance, by using dual metal composite top electrode, to form a arched contact electrode and reduce the drive voltage efficiently; (iii) using non-isometric spring structure to stabilize the electrode movement of the components. Besides, we did the optimizing simulation for this study, which were supported by Ansoft-HFSS and ADS, in terms of the micro switch which has different structural design as mentioned above.
The size of the optimized RF micro-switch which we developed for this study is only 145 μm × 205 μm. Switched from on-state to off-state, the component needs 36.5V drive voltage only. According to the result of the commercial network analyzer in 1-4.5GHz frequency range, the isolation rate of the components reaches -59.721dB while off-state; the insert los reaches -1.625dB while on-state.

目錄
第一章 序論........... ........................ ...................................................... .. 1
1-1前言…………………….......................................................... .... 1
1-2 文獻回顧..................................................................... ................ 4
1-2-1接觸形式(form of contact)................................................. 4
1-2-2射頻電路組態(RF circuit configuration) …........... ........... 5
1-2-3驅動方式(Driving method) ............. ……………………..6
1-2-4機械結構 (mechanical structure) ................. ...…………..7
1-3 研究動機與目的........................... ......... …………...…………..9
1-4 論文架構............................. …………………………………........10
第二章 射頻微切換器理論與原理..................................... …………….11
2-1 射頻微切換器之理論推導............................................... ……..….11
2-2 電磁特性分析 ............................................................ ............17
第三章 具高絕緣特性之微切換器設計與實驗方法……................... 22
3-1 射頻微型切換器之調變參數設計 ..............................................22
3-1-1 底電極共平面波導CPW圖形之設計規範................... 24
3-1-2 氮化矽薄膜圖形之設計規範.................................. .... 25
3-1-3　蝕刻孔圖形之設計規範.......................................... ..... 26
3-1-4 高頻電磁模擬介紹與分析............................. ................ 27
3-2　具高絕緣特性之射頻微切換開關製作流程................ ......... 32
3-2-1　製作流程............................................................. .......... 32
3-2-2　微切換器元件光罩佈局設計.............................. ......... 34
3-2-3　製作方法與製程參數............................................ ....... 35
3-3　具高絕緣特性之射頻微切換器的量測系統設計........... ...... 46
3-3-1　具高絕緣特性之射頻微切換器之探針式量測平台簡 介 ....................................................................................... 46
第四章 實驗結果與討論.............................................................. ....... 48
4-1　具高絕緣特性之射頻微切換器結構分析………........ ......... 49
4-1-1　釋放後鋁薄膜下的Dimple結構.................................. 49
4-1-2　氮化矽絕緣層結構 ..................................................... 50
4-1-3 犧牲層結構................................................................... 51
4-1-4 釋放犧牲層後結構完成結果....................................... 52
4-2　具高絕緣特性之射頻微切換器探針量測結果與分析......... 54
4-2-1　射頻微切換器探針式量測平台結果比較與討論....... 55
第五章 結論及未來之展望............................................................ ..... 67
5-1 結論.. ....................................................................................... 67
5-2 未來展望........ ......................................................................... 68
附錄 A 設備規格與製程參數. ......................................................... ..69
A-1 交通大學奈米中心(NFC)........................................................ 69
A-2　國家奈米元件實驗室南區辦公室(NDL)... ................. ....... ..70
A-3 國立中山大學奈米微系統實驗室(NSYSU NEMS Lab).. ……..75









表目錄
表1-1 不同組態之微機電元件分類表........................................ ......... 2
表1-2 FET, PIN and RF MEMS Electrostatic Switche特性比較 ……..3
表3-1 不等距彈簧上電極設計之參數變化............... ......................... 23
表3-2 二氧化矽薄膜之化學氣像沉積條件參數表.......................…………. 39
表3-3 具高絕緣特性之射頻微切換器詳細製程步驟與實驗參數表 44
表4-1 改變線寬規格之微切換器特性量測比較表......................…...56
表4-2 改變接觸橋規格之微切換器特性量測比較表.......................……….58
表4-3 改變傳輸線間距之微切換器特性量測比較表.................…………...60
表4-4 蝕刻孔數目不同對微切換器特性量測比較表....................................62
表4-5 接觸面積不同對微切換器特性量測比較表........................................64
表4-6 彈簧係數不同對微切換器特性量測比較表...........................……….66




圖目錄
圖1-1 (a)電阻式接觸(M-M)；(b)電容式接觸(M-I-M)......................... 5
圖1-2 (a)串聯電阻式微切換器；(b)並聯電容式微切換器........... …......... 6
圖 2.1 傳統平形板可變電容模型................................................................12
圖2-2 平行板電容應用於微切換器之機電模型................. ............... 12
圖2-3 等效微機電開關作動狀態曲線.................. ............................. 15
圖2-4 雙端蜿蜒式彈簧常數模型.................................................... ... 15
圖2-5 雙段固定式彈簧常數模型........................................... ............ 17
圖2-6　(a)直流串聯開關等效電路模型 (b)開關橫切面示意圖 (c)等　　　　　　　　　　　　　　　效電路模型.......................................... ........................... ..... ........ ……...18
圖2-7 串聯開關在開態位置上之等效電路模式示意圖........... .. ..... 18
圖3-1 不等常彈簧上電極設計之參數變化.................................. ..... 23
圖3-2 (a) CPW基本結構與參數定義；(b)開態等效阻抗示意圖...... 24
圖3.3 氮化矽薄膜覆蓋下電極..................................................... .......25
圖3-4 蝕刻孔圖形設計示意圖........................................ ................... 26
圖3-5 蝕刻孔於上電極示意圖............. ……………………… …......26
圖3-6 具高絕緣特性之射頻微切換器模型圖.................................. 27
圖3-7 微切換器模型之高頻探針模擬示意圖.................................. 27
圖3-8 不同傳輸線寬度之模擬比較圖.............................................. 28
圖3-9 不同傳輸線間距之模擬比較圖.............................................. 29
圖3-10 不同接觸橋型態之模擬比較圖.............................................. 30
圖3-11 不同接觸面積之模擬比較圖.................................................. … 31
圖3-12 微切換器元件製程整合示意圖.............................................. 33
圖3-13 具絕緣特性之射頻微切換開關單一元件-五道光罩佈局設計.............................................................................................. 34
圖3-14 PECVD裝置作動機制示意圖................................................ 39
圖3-15 二氧化矽蝕刻製程流程示意圖……………………………. 41
圖3-16 本論文量測系統示意圖......................................................... 46
圖3-17 (a) E5071C之網路分析儀；(b)探針量測環境圖.................... 47
圖3-18 ISS校正片之示意圖............................................................... 47
圖4-1 (a)犧牲層蝕刻DimpleOM圖；(b)Dimple於鋁薄膜下OM圖49
圖4-2 (a)電極絕緣層製程顯影OM圖；(b)電極絕緣層完成OM圖. 50
圖4-3 光阻經蒸鍍金屬焦化圖............................................................. 51
圖4-4 光阻經蒸鍍造成金屬破裂OM圖………………….................. 51
圖4-5 (a)元件釋放完成之SEM圖；(b)以HF蝕刻液釋放完成圖..... 52
圖4-6 (a)、(b)為BOE釋放之SEM圖；(c)、(d)為Buffer HF釋放之SEM圖.....................................................................................................53
圖4-7 不同傳輸線寬度對參數影響比較圖：(a)為電容值對頻率響應圖；(b)為品質因子對頻率響應圖；(c)絕緣度對頻率響應圖................ 56
圖4-8 不同接觸橋對參數影響比較圖：(a)為電容值對頻率響應圖；(b)為品質因子對頻率響應圖；(c)絕緣度對頻率響應圖…………...... 58
圖4-9 傳輸線間距不同對參數影響比較圖：(a)為電容值對頻率響 應圖；(b)為品質因子對頻率響應圖；(c)絕緣度對頻率響應圖............ 60
圖4-10 蝕刻孔數目不同對參數影響比較圖：(a)為插入損耗對頻率響應圖；(b)反射損耗對頻率響應圖；(c)接觸電阻對頻率響應圖............ 62
圖4-11 接觸面積不同對參數影響比較圖：(a)為插入損耗對頻率響應圖；(b)反射損耗對頻率響應圖；(c)接觸電阻對頻率響應圖.................64
圖4-12 彈簧係數不同對參數影響比較圖：(a)為插入損耗對頻率響應圖；(b)反射損耗對頻率響應圖.............................................................. 65

圖 A-1 低壓化學氣相沉積系統. ......................................................... 69
圖 A-2 光阻塗佈及顥影系統........................................................... ... 70
圖 A-3 光罩對準曝光系統................................................................. .. 71
圖 A-4 反應式離子蝕刻機................................................................ ... 72
圖 A-5 光阻去除、化學蝕刻機台......................................................... 73
圖 A-6 濕式蝕刻清洗系統......................................................... …….. 73
圖 A-7 高溫及低壓爐管.................................. ………………………. 75
圖 A-8 電子束蒸鍍機...................................................... …………… .75
圖 A-9 射頻磁控濺鍍機.............................................. ………………. 76

【1】 G.M. Rebeiz, J. B. Muldavin, “RF MEMS switches and switch circuits”, IEEE Microwave Magazine, Vol. 2,. pp: 59-71. A. Dec, et al, 2001.
【2】 N.N. (2003), RF MEMS, Conventor Inc.,
http://www.coventor.com/rf-mems/.
【3】 C. T. C. Nguyen, L. P. B. Katehi, and G. M.Rebeiz, “Micromachined devices for wireless communications,” Proceedings of the IEEE, vol. 86, No. 8, pp. 1756-1768, Aug. 1998.
【4】 R. Al-Dahleh, R. R. Mansour, “High-Capacitance-Ratio Warped-Beam Capactive MEMS Switch Designs ”, Proceedings of the IEEE, Vol 19 ,pp538– 547,June.2010
【5】 翁敏航.林育德.陳永祥.戴寶通,’’ 電容式橋型射頻微機電切換器之設計’’ 奈米通訊誌
【6】 E. R. Brown, “RF-MEMS switches for reconfigurable Integrated Circuits”, IEEE Transactions on Microwave Theory and Techniques, vol. 46, No. 11, pp. 1868, November, 1998.
【7】 陳宗義，微機電技術在無線通訊產業之發展策略，91年。
【8】 Advence Design System (ADS) Software,Agilent Technologies , SantaClara,CA,2007[Online].Available:http://eesof.tm.agilent.com/
【9】 G.M. Rebeiz, “RF MEMS Theory, Design and Technology ”.Chapter3,p59-84,New York, Wiley, 2003.
【10】 W. Scott Best, Amol Karnik, Jack Parkes, “Integrated Design and Simulation of RF-MEM Devices ” Coventor, Inc., Jan 2002
【11】 V. Varadan, K. J. Vinoy, K. A. Jose, “ RF MEMS and Their Applications,” ISBN: 0-470-84619-4 , Chapter8.pp.158, August 2003
【12】 Yao;Jun J Inventors: (Thousand Oaks, CA);“Micro electromechanical RF switch ”, Assignee: Rockwell International Corporation (Seal Beach, CA) , Nov 1996,United States Patent No: 5578976
【13】 J.B. Muldavin and G.M. Rebeiz, “High isolation MEMS shunt switches; Part 1: Modeling, ”IEEE Trans. Microwave Theory Tech., Vol. 48, pp. 1045-1052, June 2000.
【14】 Yao, J.J.; Chang, M.F., “A Surface Micromachined Miniature Switch For Telecommunications Applications With Signal Frequencies From DC Up To 4 Ghz ”, in Int Conf .Solid State Sensors and Actuators,Volume 2,pp. 384-387,vo2, June 1995
【15】 J.B. Muldavin and G.M. Rebeiz, "High isolation MEMS shunt switches; Part 2: Design," IEEE Trans. Microwave Theory Tech., Vol. 48, pp. 1053-1056, June 2000.

【16】 G.M. Rebeiz, Jeremy B. Muldavin, “RF MEMS switches and switch circuits”, IEEE Microwave Magazine, Vol. 2,. pp: 59-71. A. Dec, et al, 2001.
【17】 J. Oberhammer,“Novel RF MEMS Switch and Packaging Concepts.” Kollegiesalen (Valhallav. 79) at the Royal Institute of Tech, Ph. D. Thesis,pp.153, 2004
【18】 K. Chang, I. Bahl, V. Nair, “RF and Microwave Circuit and Component Design for Wireless Systems ” Wiley , Chapter12.pp.496-501, Feb 2002.
【19】 W. Scott Best, A. Karnik, J. Parkes, “Integrated Design and Simulation of RF-MEM Devices ” Coventor, Inc., Jan 2002.
【20】 J. Muldavin , "Design and Analysis of Series and Shunt MEMS Switches ", Chapter4.pp.73-90,University of Michigan, Ph.D./EE June 2001.
【21】 J. Muldavin , "Design and Analysis of Series and Shunt MEMS Switches ", Chapter2.pp.16-36,University of Michigan, Ph.D./EE June 2001.